Vishay Intertechnology, Inc.- 逻辑IC
逻辑IC - 型号列表
共 214 个型号| 制造商零件编号 | 库存 | 价格 | 标准包装数量 | 封装形式 | 导通电阻（最大） | RoHS | 包装方式 | 类型 | 工作温度 | 最小起订量 | 单位包装 | FET类型 | FET特性 | 最大功率 | 额定功率 | Vgs(th)（最大）@ Id | 导通电阻 Rds(on) (最大) @ Id, Vgs | 漏源电压（Vdss） | 连续漏极电流（Id）@ 25°C | 安装类型 | 总长度 | 供应商器件封装 | 欧盟RoHS | 最大栅源电压 Vgs | 元件数量 | 击穿电压 | 最大功耗 | 峰值脉冲电流（10/1000µs） | 包装数量 | 位数 | 通道类型 | 引脚样式 | 配置 | 宽度 | 集电极-发射极饱和电压（最大）@ Vge, Ic | 漏极电流（Idss）@ Vds（Vgs=0） | 外壳尺寸-插件 | 印刷电路板数量 | 标准封装名称 | 输入电容（Ciss）（最大）@ Vds | 其他名称 | 晶体管类型 | 首抽头延迟 | 供电电压 | 传播延迟（最大） | 栅极电荷（Qg）（最大）@ Vgs | 开关时间（Ton, Toff）（最大） | 冷却的封装 | 下降时间（典型） | 关断延迟时间 | 重量 | 尺寸/外形 | 抗辐射加固 | 极性 | 产品类别 | 工厂包装数量 | 海关税号 | 阈值电压 | 导通电阻 RDS(On) | 高度 | 长度 | 栅极触发电压 Vgt (最大) | 安装样式 | 引脚数 | 材料表面处理 | 输入信号 | 开启时间 | 开关功能/额定值 | 最大额定电流 | 端接方式 | 已删除 | 卡标准 | 技术 | 下降时间 | 噪声系数 | 额定输出功率 | 开通延迟时间 | 最大频率 | 上升时间（典型） | 漏电流（最大） | 电流传输比（最大） | Vce饱和电压（最大）@ Ib, Ic | 极化 | 容差 | 电阻 | 功率（瓦） | 电阻值（欧姆） | 直径 | 安装特性 | 涂层、外壳类型 | 成分 | 温度系数 | 触点电压（最大） | 共模瞬态抗扰度（最小） | 商标名 | 零件号别名 | 自然散热热阻 | 制造商全称 | 汽车级 | 无铅定义 | 逻辑类型 | 每端口功率（瓦） | 供电电压 (Vcc/Vdd) | 匹配码 | 标准交期 | 热阻 @ GPM | 峰值脉冲电流（8/20µs） | 插片宽度 | SPG | SMD标记 | 单元数量 | 测试温度 | 热阻 | 二极管配置 | 模块/板类型 | 系列 | 深度 | 胶带最大宽度 | 结工作温度 |
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 Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD MOSFET N-CH 90V 860MA TO-205 vishay / siliconix | 10 | 1: ¥3,255.976 | Bulk | 3TO-205AD | 4000@10V | Contains lead / RoHS non-compliant | Tube | Power MOSFET | -55 to 150 °C | 20 | 20 | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 725mW | 0.725 W | 2V @ 1mA | 4000@10V mOhm | 90V | 860mA (Tc) | Through Hole | 9.4(Max) | TO-39 | Not Compliant | ±20 V | 1 | 90 V | 725 | 0.86 A | TO-205AD | 3 | Enhancement | - | - | 8.15(Max) | 90 V | 0.86 A | 6.6(Max) | 3 | - | 50pF @ 25V | - | - | - | - | - | - | - | TO-205AD | - | - | - | - | No | N | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Military | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 Trans MOSFET P-CH 30V 3.9A 8-Pin SOIC N T/R MOSFET P-CH DUAL 30V 3.0A 8-SOIC SI4947ADY-T1-E3, Dual P-channel MOSFET Transistor 3.9A 30V, 8-Pin SOIC MOSFET 30V 3.9A 2W MOSFET, DUAL P, SO-8 MOSFET;SO8Dual30VP-CH,4.5VRated vishay / siliconix | 10 | 2500: ¥2.2372 | Tape & Reel | 8SOIC N | 0.08 Ω | Lead free / RoHS Compliant | Tape and Reel | Power MOSFET | -55 to 150 °C | - | - | 2 P-Channel (Dual) | Logic Level Gate | 1.2W | 2 W | 1V @ 250µA | 80@10V mOhm | 30V | 3A | Surface Mount | 5(Max) | 8-SOIC N | Compliant | ±20 V | 2 | 30 V | 2 W | 3.9 A | SOIC N | 8 | P | Gull-wing | Dual, Dual Drain | 4mm | 30 V | 3 A | 1.55(Max) | 8 | SOIC | - | SI4947ADY-T1-E3CT | P-Channel | 21 ns | -1.2V | 9 ns | 8nC @ 5V | 8 ns | SOIC N | 10 ns | 21ns | 0.000001 | 5 x 4 x 1.55mm | No | P | MOSFET | 2500 | 85322300 | :-1V | :62mohm | 1.55mm | 5mm | +/- 20 V | SMD/SMT | :8 | :MSL 1 - Unlimited | - | - | - | :-3A | :SMD | Compliant | Power MOSFET | - | 10 ns | Not Required dB | Not Required dB | 8ns | Not Required MHz | 9 ns | 3.9 A | 5S | Not Required % | P-Channel | - | - | - | - | - | - | - | - | - | - | - | TrenchFET | SI4947ADY-E3 | 87°C/W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | :SOIC | :Dual | - | - | - | - |
 Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R MOSFET N/P-CH 30V 2.5/1.8A 6TSOP MOSFET;Dual; Complementary; 30V; 2.5/1.8A; TSOP-6 MOSFET 30V 2.5/1.8A MOSFET,Dual,Complementary,30V,2.5/1.8A,TSOP-6 vishay / siliconix | 24 | 1: ¥25.641 | Tape & Reel | 6TSOP | 0.105/0.2Ohms | Lead free / RoHS Compliant | Tape and Reel | Complementary | -55 to 150 °C | 3000 | 3000 | N and P-Channel | Logic Level Gate | 1.15W | 1.15 W | 1V @ 250µA | 105@10V@N Channel|200@10V@P Channel mOhm | 30V | 2.5A, 1.8A | Surface Mount | 3.05 | 6-TSOP | Compliant | ±20 V | 2 | 30 V | 1.15W | 2.5@N Channel|1.8@P Channel A | TSOP | 6 | N|P | Gull-wing | Dual | 1.65 mm | +/- 30 V | 2.5 A, 1.8 A | 1(Max) | 6 | TSOP | - | SI3552DV-T1-E3CT | N and P-Channel | 13@N Channel|12@P Channel ns | 0.81/-0.83V | 9@N Channel|12@P Channel ns | 3.2nC @ 5V | 7@N Channel|8@P Channel ns | - | 5@N Channel|7@P Channel ns | 13/12ns | - | - | - | - | MOSFET | 3000 | - | - | - | 1.1 mm | 3.05 mm | +/- 20 V | SMD/SMT | - | - | - | - | - | - | - | - | - | Si | - | - | - | 7/8ns | - | - | - | 4.3/2.4S | - | N-ChannelandP-Channel | - | - | - | - | - | - | - | - | - | - | - | TrenchFET | SI3552DV-E3 | 130°C/W | Vishay Semiconductors | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | TrenchFET® | - | - | - |
Trans MOSFET N-CH 30V 5.3A/7.7A 8-Pin SOIC N T/R MOSFET N-CH DUAL 30V 8-SOIC DUAL N CH/SCHOTTKY MOSFET, 30V SOIC vishay / siliconix | 10 | 1: ¥12.308 | Tape & Reel | 8SOIC N | 22@10V@Channel 1|13@10V@Channel 2 | Lead free / RoHS Compliant | Tape and Reel | Power MOSFET | -55 to 150 °C | 1 | 0 | 2 N-Channel (Dual) | Logic Level Gate | 1W, 1.25W | 7.7 W | 2V @ 250µA | 22@10V@Channel 1|13@10V@Channel 2 mOhm | 30V | 5.3A, 7.7A | Surface Mount | 5(Max) | 8-SOIC N | Compliant | 20 V | 2 | 30 V | 1000@Channel 1|1250@Channel 2 | 5.3@Channel 1|7.7@Channel 2 A | SOIC N | 8 | Enhancement | Gull-wing | - | 4(Max) | 30 V | 5.3 A | 1.55(Max) | 8 | SOIC | - | SI4816DY-T1-E3CT | :N Channel + Schottky | 26@Channel 1|44@Channel 2 ns | - | 5 ns | 12nC @ 5V | 10@Channel 1|15@Channel 2 ns | SOIC N | 8@Channel 1|12@Channel 2 ns | - | 0.002 | - | No | N | - | - | 85412100 | :2V | :18mohm | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) TO-263 MOSFET 250V 45A 375W 58mohm @ 10V N-CH 250V 45A 58mOhm TO263-3 MOSFET N-CH 250V 45A D2PAK SUM45N25-58-E3, N-channel MOSFET Transistor 45A 250V, 3-Pin TO-263 MOSFET,N CH,W DIODE,250V,45A,D2PAK Vishay N沟道 Si MOSFET , 45 A, Vds=250 V, 3针 TO-263封装 vishay / siliconix | 10 | 1: ¥22.911 | Rail / Tube, Tape & Reel | 3TO-263 | 0.058 Ω | RoHS Compliant By Exemption | Reel | - | -55 to 175 °C | 800 | 800 | MOSFET N-Channel, Metal Oxide | Standard | 3.75W | 3.75 W | 4V @ 250µA | 58@10V mOhm | 250V | 45A (Tc) | Surface Mount | - | TO-263 (D2Pak) | Compliant | ±30 V | 1 | 250 V | 3.75 W | 45 A | TO-263 | 3 | Enhancement | Gull-wing | Single | 9.65mm | 250 V | 45 A | - | - | D2PAK | 5000pF @ 25V | SUM45N25-58-E3CT | N-Channel | 40 ns | - | 220 ns | 140nC | 22 ns | TO-263 | 145 ns | - | 0.00143 | 10.41 x 9.65 x 4.83mm | - | - | MOSFET | 800 | 85412900 | :4V | :0.047ohm | 4.83mm | 10.41mm | +/- 30 V | SMD/SMT | :3 | :MSL 1 - Unlimited | - | - | - | - | - | - | Power MOSFET | TrenchFET | 145 ns | - | - | - | - | 220 ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NO | RoHS-conform | NO | 375W | 250V | SUM45N25-58-E3 | 15 weeks | 0.4K/W | - | - | - | - | - | - | - | - | - | - | - | - | - |
 Res Wirewound 1K Ohm 10% 225W ±30ppm/°C Ceramic Hi Temp Sil RDL Lug Bolt-On Skin Pack RES CHAS MNT 1K OHM 10% 225W vishay / dale | 100 | 1: ¥293.624 | Bulk | Radial, Tubular | - | Contains lead / RoHS non-compliant | Bulk | Wirewound | -55 to 350 °C | - | - | - | - | - | 225 W | - | - | - | - | - | 266.7 mm | - | - | - | - | - | - | - | - | - | - | Solder Lugs | - | - | - | - | - | - | - | - | HLTA-1.0K | - | - | - | - | - | - | - | - | - | - | 1.125" Dia x 10.500" L (28.58mm x 266.70mm) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 10 % | 1 KOhm | 225W | 1k | 33.34 mm | Brackets (not included) | Silicon Coated | Wirewound | ±30ppm/°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Res Wirewound 25 Ohm 10% 225W ±30ppm/°C Ceramic Hi Temp Sil RDL Lug Bolt-On Skin Pack RES CHAS MNT 25 OHM 10% 225W vishay / dale | 10 | 1: ¥293.624 | Bulk | Radial, Tubular | - | Contains lead / RoHS non-compliant | Bulk | Wirewound | -55 to 350 °C | - | - | - | - | - | 225 W | - | - | - | - | - | 266.7 mm | - | - | - | - | - | - | - | - | - | - | Solder Lugs | - | - | - | - | - | - | - | - | HLTA-25 | - | - | - | - | - | - | - | - | - | - | 1.125" Dia x 10.500" L (28.58mm x 266.70mm) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 10 % | 25 Ohm | 225W | 25 | 33.34 mm | Brackets (not included) | Silicon Coated | Wirewound | ±30ppm/°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Res Wirewound 50 Ohm 10% 225W ±30ppm/°C Ceramic Hi Temp Sil RDL Lug Bolt-On Skin Pack RES CHAS MNT 50 OHM 10% 225W vishay / dale | 10 | 1: ¥293.624 | Bulk | Radial, Tubular | - | Contains lead / RoHS non-compliant | Bulk | Wirewound | -55 to 350 °C | - | - | - | - | - | 225 W | - | - | - | - | - | 266.7 mm | - | - | - | - | - | - | - | - | - | - | Solder Lugs | - | - | - | - | - | - | - | - | HLTA-50 | - | - | - | - | - | - | - | - | - | - | 1.125" Dia x 10.500" L (28.58mm x 266.70mm) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 10 % | 50 Ohm | 225W | 50 | 33.34 mm | Brackets (not included) | Silicon Coated | Wirewound | ±30ppm/°C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| 10 | 2: ¥850.204 | Rail / Tube | 14CDIP | 70@±15V Ohm | - | - | Analog Switch | - | 1 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Dual SPST | - | - | - | - | - | - | - | - | - | - | ±7 V | - | - | - | - | - | 425@±15V ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Yes | 1000@±15V ns | SPST | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK N-CH 500V 8A 850mOhm TO263-3 MOSFET N-CH 500V 8A D2PAK IRF840ASPBF, N-channel MOSFET Transistor 8A 500V, 3-Pin D2PAK MOSFET N-Chan 500V 8.0 Amp MOSFET, N, 500V, 8A, D2-PAK TRANSITOR,IRF840ASPBF Transistor: N-MOSFET; unipolar; 500V; 8A; 125W; D2PAK Vishay , N沟道 MOSFET, 8 A, Vds=500 V, 3针 D2PAK封装 Vishay Intertechnology, Inc. | 10 | 1: ¥11.9805 | Bulk, Rail / Tube | 3D2PAK | 0.85 Ω | Lead free / RoHS Compliant | Tube | Power MOSFET | -55 to 150 °C | 1000 | 50 | MOSFET N-Channel, Metal Oxide | Standard | 3.1W | 3.1 W | 4V @ 250µA | 850@10V mOhm | 500V | 8A (Tc) | Surface Mount | 10.41(Max) | D2PAK | Compliant | ±30 V | 1 | 500 V | 3.1 W | 8 A | D2PAK | 3 | Enhancement | Gull-wing | Single | 9.65mm | 500 V | 8A | 4.83(Max) | 2 | D2PAK | 1018pF @ 25V | *IRF840ASPBF | N-Channel | 26 ns | - | 23 ns | 38nC | 11 ns | D2PAK | 19 ns | - | 0.0018 | 10.67 x 9.65 x 4.83mm | No | N | MOSFET | 1000 | 85412900 | :4V | :850mohm | 4.83mm | 10.67mm | +/- 30 V | SMD/SMT | :3 | :- | - | - | - | :8A | :SMD | Compliant | Power MOSFET | HighV. | 19 ns | Not Required dB | Not Required dB | - | Not Required MHz | 23 ns | 8 A | - | Not Required % | - | - | - | - | - | - | - | - | - | - | :500V | - | - | - | - | - | NO | RoHS-conform | NO | 125W | 500V | IRF840ASPBF | 12 weeks | 1K/W | :32A | Tab | 50 | :IRF840AS | 1 | :25°C | :1°C/W | - | - | - | - | - | - |
 Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 MOSFET P-CH 100V 1.1A SOT223 IRFL9110PBF, P-channel MOSFET Transistor 1.1A 100V, 4-Pin SOT-223 MOSFET, P, -100V, -1.1A, SOT-223 MOSFET, P CH, 100V, 1.1A, SOT-223 MOSFET,Power;P-Ch;VDSS-100V;RDS(ON)1.2Ohms;ID-1.1A;SOT-223;PD3.1W;VGS+/-2 Transistor: P-MOSFET; unipolar; -100V; -1.1A; 3.1W; SOT223 MOSFET P, -100 V -1.1 A 2 W SOT-223, IRFL9110PBF, Vishay Vishay , P沟道 MOSFET, 1.1 A, Vds=100 V, 3+Tab针 SOT-223封装 Vishay Intertechnology, Inc. | 2417 | 1: ¥3.0804 | Bulk, Rail / Tube | 4SOT-223 | 1.2 Ω | Lead free / RoHS Compliant | Tube | Power MOSFET | -55 to 150 °C | 4000 | 80 | MOSFET P-Channel, Metal Oxide | Standard | 2W | 2 W | 4V @ 250µA | 1200@10V mOhm | 100V | 1.1A (Tc) | Surface Mount | 6.7(Max) | SOT-223 | Compliant | ±20 V | 1 | 100 V | 2 W | 1.1 A | SOT-223 | 4 | P | Gull-wing | Dual Drain, Single | 3.7mm | 100 V | 1.1 A | 1.8(Max) - 0.061 | 3 | SOT-223 | 200pF @ 25V | - | :P Channel | 15 ns | -5.5V | 27 ns | 8.7nC @ 10V | 10 ns | SOT-223 | 17 ns | 15ns | 0.0002 | 6.7 x 3.7 x 1.45mm | No | P | - | - | 85412900 | :-4V | :1.2ohm | 1.45mm | 6.7mm | - | - | :3 | :MSL 1 - Unlimited | - | - | - | :-1.1A | :SMD | Compliant | Power MOSFET | - | - | Not Required dB | Not Required dB | 10ns | Not Required MHz | - | 1.1 A | 0.82S | Not Required % | P-Channel | - | - | - | - | - | - | - | - | - | :-100V | - | - | - | - | - | - | - | - | - | - | - | - | - | :8.8A | Tab | 160 | :FL9110 | 1 | :25°C | :60°C/W | - | - | - | :7.3mm | :12mm | +150°C |
| - | Rail / Tube | 20LCC | 50@±15V Ohm | - | - | Analog Switch | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Quad SPST | - | - | - | - | - | - | - | - | - | - | ±7 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Yes | 65@±10V ns | SPST | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
 Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R N-CH REDUCED QG FAST SWITCH MOSFET MOSFET N-CH D-S 12V PPAK 8SOIC MOSFET, N, 8-SOIC vishay / siliconix | 10 | 1: ¥7.344 | Tape & Reel | 8PowerPAK SO | 5.5@4.5V | Lead free / RoHS Compliant | Tape and Reel | - | -55 to 150 °C | 1 | 0 | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 1.9W | - | 1.4V @ 250µA | 5.5@4.5V mOhm | 12V | 13A (Ta) | Surface Mount | 4.9 | PowerPAK® SO-8 | Compliant | ±8 V | 1 | 12 V | :5W | 13 A | PowerPAK SO | 8 | Enhancement | No Lead | - | 5.89 | - | - | 1.04 | 8 | - | - | - | :N Channel | 82 ns | - | 32 ns | 30nC @ 4.5V | 28 ns | - | 35 ns | - | 0.0001 | - | - | - | - | - | 85412900 | :1.4V | :5.5mohm | - | - | - | - | :8 | :MSL 1 - Unlimited | - | - | - | :13A | :SMD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | :12V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| - | Rail / Tube | 16PDIP | 80@10.8V Ohm | - | - | Analog Switch | - | 1 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Quad SPST | - | - | - | - | - | - | - | - | - | - | ±7 V | - | - | - | - | - | 145@±15V ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Yes | 250@12V ns | SPST | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 10 | 50: ¥124.032 | Rail / Tube | 16SBCDIP | 60@15V@-3V Ohm | - | - | Analog Switch | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Quad SPST | - | - | - | - | - | - | - | - | - | - | ±10 V | - | - | - | - | - | 50@15V@-3V ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Yes | 70@15V@-3V ns | SPST | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 QUAD N-CH MOSFET SIDEBRAZE-14 30V 1.0 OHM (HOTS) Trans MOSFET N-CH 30V 0.83A 14-Pin SBCDIP MOSFET N-CH QD 30V 830mA 14DIP MOSFET QD 30V 0.53A MOSFET 4N-CH 30V 830MA 14DIP vishay / siliconix | 10 | 25: ¥320.008 | Rail / Tube | 14SBCDIP | 1000@12V | Contains lead / RoHS non-compliant | * | - | -55 to 150 °C | 50 | 25 | 4 N-Channel | Logic Level Gate | 1.3W | 2 W | 2.5V @ 1mA | 1000@12V mOhm | 30V | 830mA | Through Hole | 19.56(Max) | * | Not Compliant | ±20 V | 4 | 30 V | 2000 | 0.83 A | SBCDIP | 14 | Enhancement | Through Hole | Quad | 7.87 mm | 30 V | 0.83 A | 3.05(Max) | 14 | SBCDIP | 110pF @ 15V | - | N-Channel | - | - | - | - | - | - | - | - | 0.042329 oz | - | - | - | MOSFET | 25 | - | - | - | 4.45 mm | 19.56 mm | +/- 20 V | Through Hole | - | - | - | - | - | - | - | - | - | Si | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Vishay Semiconductors | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD MOSFET N-CH 60V 990MA TO-205 vishay / siliconix | 10 | 20: ¥1,351.296 | Bulk | 3TO-205AD | 3000@10V | Contains lead / RoHS non-compliant | Tube | Power MOSFET | -55 to 125 °C | 20 | 20 | MOSFET N-Channel, Metal Oxide | Standard | 725mW | 0.725 W | 2V @ 1mA | 3000@10V mOhm | 60V | 990mA (Tc) | Through Hole | 9.4(Max) | TO-39 | Supplier Unconfirmed | ±20 V | 1 | 60 V | 725 | 0.99 A | TO-205AD | 3 | Enhancement | - | - | 8.15(Max) | 60 V | 0.99 A | 6.6(Max) | 3 | TO-205AD | 50pF @ 25V | - | - | - | - | - | - | - | TO-205AD | - | - | - | - | No | N | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Military | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| - | Rail / Tube | 16PDIP | 80@10.8V Ohm | - | - | Analog Switch | - | 1 | 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Quad SPST | - | - | - | - | - | - | - | - | - | - | ±7 V | - | - | - | - | - | 145@±15V ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Yes | 250@12V ns | SPST | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
Trans MOSFET P-CH 80V 0.88A 3-Pin TO-205AD MOSFET P-CH 80V 3A TO-205 MOSFET P-CH 80V 880MA TO-205 vishay / siliconix | 10 | 100: ¥456.96 | Bulk | 3TO-205AD | 5000@10V | Contains lead / RoHS non-compliant | * | - | -55 to 150 °C | - | - | MOSFET P-Channel, Metal Oxide | Standard | 6.25W | - | 4.5V @ 1mA | 5000@10V mOhm | 80V | 880mA (Ta) | Through Hole | - | * | Not Compliant | ±20 V | 1 | 80 V | 6250 | 0.88 A | TO-205AD | 3 | P | - | - | - | - | - | - | - | TO-205AD | 150pF @ 25V | - | - | 20 ns | - | 30 ns | - | 11 ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
-60V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A HEXDIP PACKAG TRANSISTOR:FET:SM SIGNAL MOSFET P-CH 100V 1A 4-DIP MOSFET P-Chan 100V 1.0 Amp Vishay Intertechnology, Inc. | 10 | 1800: ¥8.976 | 2,500 | 4-DIP (0.300", 7.62mm) | - | Contains lead / RoHS non-compliant | Bulk | - | - | 1 | 0 | MOSFET P-Channel, Metal Oxide | Standard | 1.3W | - | 4V @ 250µA | 600 mOhm @ 600mA, 10V | 100V | 1A (Ta) | Through Hole | - | 4-HVMDIP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 390pF @ 25V | - | - | - | - | - | 18nC @ 10V | - | - | - | - | - | - | - | - | MOSFET | 2500 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |