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Diodes Incorporated

Diodes Incorporated- 分立IGBT

Diodes公司(Diodes Incorporated)总部位于美国德克萨斯州普莱诺,是全球领先的高品质应用特定标准半导体产品制造商和供应商。公司专注于分立、逻辑、模拟及混合信号半导体市场,产品广泛应用于消费电子、计算、通信、工业和汽车等领域。其产品系列丰富,包括二极管、整流器、晶体管、MOSFET、保护器件、功能特定阵列等分立器件。在逻辑产品方面,提供单门逻辑等标准逻辑器件,满足简单逻辑功能需求。模拟与混合信号产品涵盖放大器、比较器以及全面的电源管理解决方案。电源管理产品线包括LED驱动器、AC-DC转换器和控制器、DC-DC开关稳压器、线性稳压器及电压基准。此外,公司还提供USB电源开关、负载开关、电压监控器、电机控制器等特殊功能器件,以及霍尔效应和温度传感器。Diodes在英国曼彻斯特和中国上海设有晶圆制造厂,在上海、济南、成都、扬州、香港、德国纽豪斯和台北等地设有组装和测试设施。公司在全球设有多个设计、营销和工程中心,如普莱诺、米尔皮塔斯、台北、桃园、竹北、曼彻斯特和纽豪斯,技术研发实力雄厚。凭借高质量及成本优势,Diodes在分立器件和标准模拟半导体领域占据重要行业地位,服务全球客户。

03

分立IGBT - 型号列表

1,839 个型号

漏极电流(Idss)@ Vds(Vgs=0)

连续漏极电流(Id)@ 25°C

最大功率

额定功率

导通电阻 Rds(on) (最大) @ Id, Vgs

其他名称

峰值脉冲电流(10/1000µs)

Vgs(th)(最大)@ Id

最大功耗

集电极-发射极饱和电压(最大)@ Vge, Ic

首抽头延迟

输入电容(Ciss)(最大)@ Vds

供应商器件封装

导通电阻(最大)

封装形式

漏源电压(Vdss)

宽度

包装数量

外壳尺寸-插件

标准包装数量

最大栅源电压 Vgs

击穿电压

每端口功率(瓦)

开关时间(Ton, Toff)(最大)

匹配码

总长度

阈值电压

冷却的封装

标准封装名称

下降时间

上升时间(典型)

导通电阻 RDS(On)

供电电压 (Vcc/Vdd)

栅极触发电压 Vgt (最大)

栅极电荷(Qg)(最大)@ Vgs

最小起订量

FET类型

下降时间(典型)

最大额定电流

触点电压(最大)

包装方式

极性

通道类型

配置

漏电流(最大)

引脚样式

平均正向功率

长度

系列

单位包装

晶体管类型

传播延迟(最大)

电流传输比(最小)

重量

标准交期

工作温度

位数

印刷电路板数量

高度

工厂包装数量

RoHS

汽车级

FET特性

安装类型

安装样式

引脚数

元件数量

类型

机械寿命

栅极电荷

技术

通道数量

制造商零件编号库存价格产品类别RoHS额定功率晶体管类型导通电阻 Rds(on) (最大) @ Id, Vgs集电极-发射极饱和电压(最大)@ Vge, Ic栅极触发电压 Vgt (最大)漏极电流(Idss)@ Vds(Vgs=0)包装方式安装样式封装形式配置工作温度标准包装数量工厂包装数量FET类型FET特性最大功率Vgs(th)(最大)@ Id漏源电压(Vdss)连续漏极电流(Id)@ 25°C安装类型供应商器件封装输入电容(Ciss)(最大)@ Vds最大栅源电压 Vgs击穿电压峰值脉冲电流(10/1000µs)通道类型最大功耗其他名称极性元件数量导通电阻(最大)位数最小起订量单位包装首抽头延迟抗辐射加固冷却的封装类型标准封装名称欧盟RoHS包装数量宽度引脚样式总长度外壳尺寸-插件印刷电路板数量无铅定义每端口功率(瓦)供电电压 (Vcc/Vdd)SVHC海关税号阈值电压最大额定电流导通电阻 RDS(On)开关时间(Ton, Toff)(最大)重量引脚数材料表面处理匹配码标准交期下降时间上升时间(典型)触点电压(最大)端接方式技术汽车级噪声系数额定输出功率最大频率漏电流(最大)Vce饱和电压(最大)@ Ib, Ic栅极电荷(Qg)(最大)@ Vgs产品通道数量平均正向功率高度长度系列制造商全称下降时间(典型)电流传输比(最小)传播延迟(最大)机械寿命已删除栅极电荷ESD保护直流电阻(DCR)- 初级热阻 @ GPM共模瞬态抗扰度(最小)二极管配置空闲电流,典型值 @ 25°C模块/板类型
2N7002-7-F
9

Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R N-CH MOS 0,210A 60V SOT23 MOSFET N-CH 60V 115MA SOT23-3 MOSFET 60V 200mW MOSFET, N CH, 60V, 0.115A, SOT23 N-CHANNEL ENHANCEMENT MODE MOSFET MOSFET N, 60 V 0.115 A 0.3 W SOT-23, 2N7002-7-F, Diodes Incorporated

diodes, inc

25258510: ¥0.2566MOSFETLead free / RoHS Compliant0.3 WN-Channel7500@5V mOhm70 V+/- 20 V0.210ATape & Reel (TR)SMD/SMT3SOT-23Single-55 to 150 °CTape & Reel3000MOSFET N-Channel, Metal OxideStandard300mW2.5V @ 250µA60V115mA (Ta)Surface MountSOT-23-350pF @ 25V±20 V60 V0.21 AEnhancement:300mW2N7002-FDICTN-CHANNEL---300030007.6 ns-----------RoHS-conform0.370W60V:No SVHC (16-Dec-2013)85412100:2.5V:800mA:13.5ohm2.8 ns0.000008:3:MSL 1 - Unlimited2N7002-7-F11 weeks--:60V:SMD-AEC-Q(101)-------------5.6 ns0.08 S3 ns----------
BSS138-7-F
8

Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R N-CH MOS-FET 0,20A 50V SOT23 MOSFET N-CH 50V 200MA SOT23-3 MOSFET 300mW 50V DSS MOSFET, N CH, 50V, 0.2A, SOT23-3 MOSFET N, 50 V 0.2 A 0.2 W SOT-23, BSS138-7-F, Diodes Incorporated

diodes, inc

3451010: ¥0.3004MOSFETLead free / RoHS Compliant300 mWN-Channel3500@10V mOhm50 V+/- 20 V0.2ATape & Reel (TR)SMD/SMT3SOT-23Single-55 to 150 °CTape & Reel3000MOSFET N-Channel, Metal OxideLogic Level Gate300mW1.5V @ 250µA50V200mA (Ta)Surface MountSOT-23-350pF @ 10V±20 V50 V0.2 AEnhancement:300mWBSS138-FDICTN-CHANNEL13.5 ohm33000300020 nsNoSOT-23Small Signal--------RoHS-conform0.3W50V:No SVHC (16-Dec-2013)85412100:1.2V:200mA:1.4ohm20(Max) ns0.000008:3:MSL 1 - UnlimitedBSS13811 weeks------Not Required dBNot Required dBNot Required MHz0.2 ANot Required %---------------------
DMN2004K-7
7

Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R N-CH MOS-FET+ESD 20V 1,5A SOT23 MOSFET N-CH 20V 540MA SOT23-3 MOSFET 20V 540mA MOSFET, N CH, 20V, 0.54A, SOT-23

diodes, inc

23365: ¥2.0954MOSFETLead free / RoHS Compliant350 mWN-Channel550@4.5V mOhm20 V+/- 8 V1.5ATape and ReelSMD/SMT3SOT-23Single-65 to 150 °CCut Tape, Tape & Reel3000MOSFET N-Channel, Metal OxideLogic Level Gate350mW1V @ 250µA20V630mA (Ta)Surface MountSOT-23-3150pF @ 16V±8 V20 V0.63 AEnhancement:350mWDMN2004KDICTN-CHANNEL10.55 ohm33000300059.4 nsNoSOT-23Small SignalSOT-23CompliantSOT-231.3Gull-wing2.913RoHS-conform0.35W20V:No SVHC (16-Dec-2013)85412100:1.6V:540mA:550mohm5.7 ns0.000008:3:MSL 1 - UnlimitedDMN2004K11 weeks--:20V:SMD--Not Required dBNot Required dBNot Required MHz0.63 ANot Required %--------37.6 ns-8.4 ns-Compliant--------
ZVN4310GTC
2

MOSFET N-Chnl 100V MOSFET N-CHAN 100V SOT223

Diodes Inc.

104000: ¥4.1684MOSFETRoHS Compliant3 WN-Channel0.75 Ohms100 V+/- 20 V1.67 AReelSMD/SMTSOT-223Single Dual Drain+ 150 C4,0004000MOSFET N-Channel, Metal OxideStandard3W3V @ 1mA100V1.67A (Ta)Surface MountSOT-223350pF @ 25V------------30 ns-------------------------16 ns25 ns------------------------------
DMP3120L-7

MOSFET PMOS SINGLE P-CHANNL Trans MOSFET P-CH 30V 2.8A 3-Pin SOT-23 T/R MOSFET P-CHANNEL GREEN 3K MOSF P CH 30V 2.8A SOT-23 MOSFET P-CH 30V 2.8A SOT-23

Diodes Inc.

30003000: ¥0.4128MOSFETRoHS Compliant1400 mWP-Channel120 mOhms at 4.5 V30 V+/- 12 V2.8 AReelSMD/SMTSOT-23-3Single+ 150 C3,0003000MOSFET P-Channel, Metal OxideLogic Level Gate1.4W1.4V @ 250µA30V2.8A (Ta)Surface MountSOT-23285pF @ 15V�12 V302.8P1400DMP3120L-7DIP10.12 ohm36000300035.3 nsNoSOT-23Power MOSFETSOT-23CompliantSOT-231.3Gull-wing2.913--------------6.8 ns6.8 ns---------6.7nC @ 10V--------------------
ZVN4424GTC
2

MOSFET N-Chnl 240V MOSFET N-CHAN 240V SOT223

Diodes Inc.

104000: ¥3.6788MOSFETRoHS Compliant2.5 WN-Channel6 Ohms240 V+/- 40 V500 mAReelSMD/SMTSOT-223Single Dual Drain+ 150 C4,0004000MOSFET N-Channel, Metal OxideLogic Level Gate2.5W1.8V @ 1mA240V500mA (Ta)Surface MountSOT-223200pF @ 25V------------40 ns-------------------------16 ns5 ns------------------------------
BS250PSTOA

MOSFET P-Chnl 45V Trans MOSFET P-CH 45V 0.23A 3-Pin E-Line T/R

Diodes Incorporated

104000: ¥2.448MOSFETRoHS Compliant700 mWP-Channel14 Ohms- 45 V+/- 20 V- 230 mABulkThrough HoleTO-92Single+ 150 C-4000---------±20450.23Enhancement700--114000@10V3------TO-92CompliantE-Line-Through Hole-------------------------------------------------
ZVP0545ASTOB
2

MOSFET P-Chnl 450V MOSFET P-CHAN 450V TO92-3

Diodes Incorporated

-MOSFETRoHS Compliant700 mWP-Channel100 Ohms- 350 V+/- 20 V- 50 mABulkThrough HoleTO-92Single+ 150 C2,0004000MOSFET P-Channel, Metal OxideStandard700mW4.5V @ 1mA450V45mA (Ta)Through HoleTO-92-3120pF @ 25V------------15 ns-------------------------15 ns15 ns--------------------Obsolete---------
2N7002K-7
4

Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R N-CH MOS-FET+ESD 0,3A 60V SOT23 MOSFET N-CH 60V 300MA SOT23-3 MOSFET N-Channel MOSFET, N CH, 60V, 0.3A, SOT-23 N-CHANNEL ENHANCEMENT MODE MOSFET

diodes, inc

581120: ¥0.4809MOSFETLead free / RoHS Compliant540 mWN-Channel2000@10V mOhm60 V+/- 20 V0.3ATape & Reel (TR)SMD/SMT3SOT-23Single-65 to 150 °CTape & Reel3000MOSFET N-Channel, Metal OxideLogic Level Gate370mW2.5V @ 1mA60V380mASurface MountSOT-23-350pF @ 25V±20 V60 V0.38 AEnhancement:350mW-N-CHANNEL---3000300015.7 ns-----------RoHS-conform0.35W60V:No SVHC (16-Dec-2013)85412100:1.6V:800mA:2ohm3.9 ns0.000008:3:MSL 1 - Unlimited2N7002K-711 weeks9.9 ns3.4 ns:60V:SMD-AEC-Q(101)-----0.3nC @ 4.5V-------9.9 ns-3.4 ns--0.3 nC-------
DMN4031SSD-13
3

MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K Trans MOSFET N-CH 40V 5.2A 8-Pin SO T/R Dual N-Ch 40V 31mOhm 7,0A SO8 MOSFET DL N-CH 40V 5.2A SO-8 40V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Inc.

40681: ¥4.012MOSFETRoHS Compliant1.42 WN-Channel31 mOhms40 V+/- 20 V7 AReelSMD/SMTSO-8Dual+ 150 C2,500-2 N-Channel (Dual)Logic Level Gate1.42W3V @ 250µA40V5.2ASurface Mount8-SO945pF @ 20V�20 V405.2N2600DMN4031SSD-13DICTN231@10V810000250019.8 nsNoSOPower MOSFETSOICCompliantSO3.95(Max)Gull-wing4.95(Max)1.5(Max)8RoHS-conformn.s.W40V---------DMN4031SSD-1315 weeks3.1 ns9.7 ns--SMDAEC-Q(101)-----18.6nC--------11 S-New At Mouser-18.6 nC-11 Sn.s.K/W----
BS250PSTZ
2

MOSFET P-Chnl 45V MOSFET P-CHAN 45V TO92-3

Diodes Incorporated

-MOSFETRoHS Compliant700 mWP-Channel14 Ohms- 45 V+/- 20 V- 230 mABulkThrough HoleTO-92Single+ 150 C2,0004000MOSFET P-Channel, Metal OxideStandard700mW3.5V @ 1mA45V230mA (Ta)Through HoleTO-92-360pF @ 10V------------------------------------------------------------Obsolete---------
DMN2005LP4K-7
2

Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R MOSFET N-CH 20V 200MA 3-DFN MOSFET 30V 300mA

diodes, inc

7991: ¥2.992MOSFETLead free / RoHS Compliant400 mWN-Channel1500@4V mOhm20 V+/- 10 V0.2 ATape and ReelSMD/SMT3DFNSingle-65 to 150 °CCut Tape, Tape & Reel3000MOSFET N-Channel, Metal OxideLogic Level Gate200mW900mV @ 100µA20V200mA (Ta)Surface Mount3-DFN1006H4 (1.0x0.6)41pF @ 3V±10 V20 V0.3 AEnhancement200DMN2005LP4KDICTN11.5 ohm3--13.7 nsNoDFNSmall SignalDFNCompliantDFN0.6No Lead10.35(Max)3--------4.06 ns---------Si-Not Required dBNot Required dBNot Required MHz0.2 ANot Required %-MOSFET Small Signal1 Channel400 mW0.35 mm1 mmDMN2005Diodes Incorporated-40 mS--Compliant--------
DMN601VK-7
2

Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R DMN601VK-7 MOSFET DUAL N-CHANNEL ROHS 3K MOSFET N-CH DL 60V 250MW SOT-563 MOSFET Dual N-Channel DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

diodes, inc

401: ¥0.7756MOSFETLead free / RoHS Compliant250 mWN-Channel2000@10V mOhm60 V+/- 20 V0.305 ATape and ReelSMD/SMT6SOT-563Dual-65 to 150 °CTape & Reel30002 N-Channel (Dual)Logic Level Gate250mW2.5V @ 250µA60V305mASurface MountSOT-56350pF @ 25V±20 V60 V0.305 AEnhancement250DMN601VKDIDKRN22 ohm610-NoSOT-563Small SignalSOT-563CompliantSOT-5631.2Flat1.60.66------------------Si------20MOSFET Small Signal2 Channel250 mW0.6 mm1.6 mmDMN60Diodes Incorporated------Y------
2N7002T-7-F
7

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R N-CH MOS-FET 0,115A 60V SOT523 MOSFET N-CH 60V 115MA SOT-523 MOSFET 60V 150mW MOSFET, N CH, 60V, 0.115A, SOT-523

diodes, inc

504381: ¥0.1589MOSFETLead free / RoHS Compliant0.15 WN-Channel7500@5V mOhm60 V+/- 20 V0.115ATape and ReelSMD/SMT3SOT-523Single-55 to 150 °CTape & Reel3000MOSFET N-Channel, Metal OxideStandard150mW2V @ 250µA60V115mA (Ta)Surface MountSOT-52350pF @ 25V±20 V60 V0.115 AEnhancement:150mW2N7002T-FDICTN-CHANNEL17.5 ohm33000300011 nsNoSOT-523Small SignalSOT-23CompliantSOT-5230.8Gull-wing1.60.753RoHS-conform0.15W60V:No SVHC (16-Dec-2013)85412100:2V:800mA:13.5ohm7 ns0.000002:3:MSL 1 - Unlimited2N7002T11 weeks--:60V:SMD--Not Required dBNot Required dBNot Required MHz0.115 ANot Required %---------0.08 S-------Commercial---
DMP2104V-7
4

Trans MOSFET P-CH 20V 1.9A 6-Pin SOT-563 T/R MOSFET P-CHANNEL GREEN 3K MOSFET P-CH 20V 860MA SOT-563 MOSFET -20V -860mA MOSFET P-CHANNEL SOT-563

diodes, inc

301: ¥0.947MOSFETLead free / RoHS Compliant210 mWP-Channel150@4.5V mOhm- 20 V+/- 12 V- 860 mATape and ReelSMD/SMT6SOT-563Single Quad Drain-55 to 150 °CTape & Reel3000MOSFET P-Channel, Metal OxideLogic Level Gate170mW1V @ 250µA20V860mA (Ta)Surface MountSOT-563320pF @ 16V±12 V20 V1.9 AP:170mWDMP2104VDICTP10.15 ohm630003000-NoSOT-563Small SignalSOT-563CompliantSOT-5631.2Flat1.60.66---:No SVHC (16-Dec-2013)85412100:-1V:-860mA:150mohm-0.000006:6:MSL 1 - Unlimited----:-20V:SMD----------------------------
DMP3030SN-7
3

Trans MOSFET P-CH 30V 0.7A 3-Pin SC-59 T/R MOSFET P-CH 30V 700MA SC59-3 MOSFET 30V 700mA

diodes, inc

101: ¥3.1395MOSFETLead free / RoHS Compliant500 mWP-Channel250@10V mOhm- 30 V+/- 20 V- 0.7 ATape and ReelSMD/SMT3SC-59Single-65 to 150 °CTape & Reel3000MOSFET P-Channel, Metal OxideLogic Level Gate500mW3V @ 1mA30V700mA (Ta)Surface MountSC-59-3160pF @ 10V±20 V30 V0.7 AP500DMP3030SNDICT-1200 mOhms3--25 ns---SOT-23CompliantSC-591.7(Max)-3.1(Max)1.3(Max)3--------10 ns-----25 ns25 ns--Si-------MOSFET Small Signal1 Channel500 mW1.3 mm3.1 mmDMP3030Diodes Incorporated40 ns------------
DMC2004VK-7
2

Trans MOSFET N/P-CH 20V 0.67A/0.53A 6-Pin SOT-563 T/R MOSFET COMPLEMENTARY PAIR GREEN 3K MOSFET COMPL PAIR SOT-563 MOSFET 400mW 20V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N+P CH MOS+ESD 20V 0,67A SOT563

diodes, inc

46281: ¥2.924MOSFETLead free / RoHS Compliant400 mWN and P-Channel550@4.5V@N Channel|900@4.5V@P Channel mOhm+/- 20 V+/- 8 V670 mA , - 530 mATape & Reel (TR)SMD/SMT6SOT-563Dual-65 to 150 °CTape & Reel3000N and P-ChannelLogic Level Gate400mW1V @ 250µA20V670mA, 530mASurface MountSOT-563150pF @ 16V±8 V20 V0.67@N Channel|0.53@P Channel AN|P-DMC2004VKDICTN/P2400 mOhms630003000-NoSOT-563Small Signal--------RoHS-conform1 W20 V---------------SiNO-----8MOSFET Small Signal2 Channel400 mW0.6 mm1.6 mmDMC2004Diodes Incorporated------Y---NO0.67 A-
DMN2005DLP4K-7
2

Trans MOSFET N-CH 20V 0.3A 6-Pin DFN T/R MOSFET DUAL N-CH 6-DFN MOSFET N-Channel DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

diodes, inc

57821: ¥3.128MOSFETLead free / RoHS Compliant350 mWN-Channel1500@4V mOhm20 V+/- 10 V0.2 ATape and ReelSMD/SMT6DFNDual-65 to 150 °CTape & Reel30002 N-Channel (Dual)Logic Level Gate350mW900mV @ 100µA20V200mASurface Mount6-DFN1310H4 (1.0x1.3)-±10 V20 V0.3 AEnhancement400DMN2005DLP4KDICTN21.5 ohm6---NoDFNSmall SignalDFNCompliantDFN1No Lead1.30.35(Max)6------------------Si-------MOSFET Small Signal2 Channel350 mW0.35 mm1.3 mmDMN2005Diodes Incorporated-------------
DMN2005LPK-7
2

Trans MOSFET N-CH 20V 0.44A 3-Pin DFN T/R N-CH MOS-FET+ESD 20V DFN1006-3 MOSFET N-CH 20V 440MA 3-DFN MOSFET 20V 200mA

diodes, inc

765: ¥0.8958MOSFETLead free / RoHS Compliant450 mWN-Channel1500@4V mOhm20 V+/- 10 V0.44ATape and ReelSMD/SMT3DFNSingle-65 to 150 °CTape & Reel3000MOSFET N-Channel, Metal OxideLogic Level Gate450mW1.2V @ 100µA20V440mASurface Mount3-DFN1006 (1.0x0.6)-±10 V20 V0.44 AEnhancement0.45DMN2005LPK-7DICTN-CHANNEL11.5 ohm330003000-NoDFNSmall SignalDFNCompliantDFN0.6No Lead10.473RoHS-conform0.54W20V---------DMN2005LPK12 weeks-----AEC-Q(101)--------------------------
DMN5L06DWK-7
4

Trans MOSFET N-CH 50V 0.305A 6-Pin SOT-363 T/R DMN5L06DWK-7 MOSFET DUAL N-CH 50V SOT-363 MOSFET Dual N-Channel MOSFET, NN CH, SOT-363 N Channel 31-91V

diodes, inc

230001: ¥3.128MOSFETLead free / RoHS Compliant250 mWN-Channel2000@5V mOhm50 V+/- 20 V305 mATape and ReelSMD/SMT6SOT-363Dual-65 to 150 °CCut Tape30002 N-Channel (Dual)Logic Level Gate250mW1V @ 250µA50V305mASurface MountSOT-36350pF @ 25V±20 V50 V0.305 AEnhancement:250mWDMN5L06DWKDICTN2:2ohm610-NoSOT-363Small SignalSOT-26CompliantSOT-3631.35(Max)Gull-wing2.2(Max)1(Max)6---:No SVHC (16-Dec-2013)85412100:1V:800mA:2ohm-0.000006:6:MSL 1 - Unlimited----:50V:SMD--Not Required dBNot Required dBNot Required MHz0.305 ANot Required %--------------------:Dual
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