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Diodes Incorporated

Diodes Incorporated- 分立半导体

Diodes公司（Diodes Incorporated）总部位于美国德克萨斯州普莱诺，是全球领先的高品质应用特定标准半导体产品制造商和供应商。公司专注于分立、逻辑、模拟及混合信号半导体市场，产品广泛应用于消费电子、计算、通信、工业和汽车等领域。其产品系列丰富，包括二极管、整流器、晶体管、MOSFET、保护器件、功能特定阵列等分立器件。在逻辑产品方面，提供单门逻辑等标准逻辑器件，满足简单逻辑功能需求。模拟与混合信号产品涵盖放大器、比较器以及全面的电源管理解决方案。电源管理产品线包括LED驱动器、AC-DC转换器和控制器、DC-DC开关稳压器、线性稳压器及电压基准。此外，公司还提供USB电源开关、负载开关、电压监控器、电机控制器等特殊功能器件，以及霍尔效应和温度传感器。Diodes在英国曼彻斯特和中国上海设有晶圆制造厂，在上海、济南、成都、扬州、香港、德国纽豪斯和台北等地设有组装和测试设施。公司在全球设有多个设计、营销和工程中心，如普莱诺、米尔皮塔斯、台北、桃园、竹北、曼彻斯特和纽豪斯，技术研发实力雄厚。凭借高质量及成本优势，Diodes在分立器件和标准模拟半导体领域占据重要行业地位，服务全球客户。

03

分立半导体 - 型号列表

共 107 个型号

其他名称

导通电阻 Rds(on) (最大) @ Id, Vgs

输入电容（Ciss）（最大）@ Vds

导通电阻（最大）

栅极电荷（Qg）（最大）@ Vgs

最大功率

连续漏极电流（Id）@ 25°C

封装形式

供应商器件封装

系列

集电极-发射极饱和电压（最大）@ Vge, Ic

首抽头延迟

最大栅源电压 Vgs

Vgs(th)（最大）@ Id

工作温度

下降时间

上升时间（典型）

标准包装数量

宽度

漏源电压（Vdss）

平均正向功率

最小起订量

单位包装

工厂包装数量

包装方式

总长度

包装数量

位数

外壳尺寸-插件

匹配码

漏极电流（Idss）@ Vds（Vgs=0）

FET类型

配置

栅极电荷

标准封装名称

印刷电路板数量

最大功耗

峰值输出电流

标准交期

额定功率

供电电压

产品类别

RoHS

输出数量

引脚样式

安装类型

极性

汽车级

晶体管类型

输出电流/通道

安装样式

输出电流

最大额定电流

FET特性

通道数量

击穿电压

峰值脉冲电流（10/1000µs）

栅极触发电压 Vgt (最大)

制造商零件编号库存价格标准包装数量包装方式安装类型RoHS封装形式供应商器件封装最小起订量单位包装其他名称工厂包装数量工作温度导通电阻 Rds(on) (最大) @ Id, Vgs晶体管类型导通电阻（最大）FET类型FET特性最大功率Vgs(th)（最大）@ Id栅极电荷（Qg）（最大）@ Vgs漏源电压（Vdss）输入电容（Ciss）（最大）@ Vds连续漏极电流（Id）@ 25°C集电极-发射极饱和电压（最大）@ Vge, Ic安装样式系列技术制造商全称最大栅源电压 Vgs通道数量配置通道类型首抽头延迟平均正向功率产品类别下降时间上升时间（典型）欧盟RoHS宽度总长度包装数量位数外壳尺寸-插件印刷电路板数量栅极电荷标准封装名称无铅定义引脚样式匹配码标准交期漏极电流（Idss）@ Vds（Vgs=0）输入类型输出数量峰值输出电流类型汽车级额定功率供电电压最大功耗故障保护通道数导通电阻（典型）最小输入电压输出电流/通道漏电流（IS(off)）（最大）结工作温度极性插片宽度输出电流最大额定电流应用额定电压输出电流（典型）元件数量击穿电压峰值脉冲电流（10/1000µs）栅极触发电压 Vgt (最大)每端口功率（瓦）集电极电流（Ic）（最大）射频系列/标准产品包含封装值套件类型供电电压 (Vcc/Vdd)
DRDNB21D-7
4
DRDNB21D-7

Complex Array For Dual Relay Driver 6-Pin SOT-363 T/R NPN TRANS.COMPLEX ARRAY SOT363 DRDNB21D-7 ARRAY DUAL RLY DVR SOT-363 RELAY DRIVER ARRAY DUAL SOT-363 Zener Diodes DUAL RELAY COMPLEX ARRAY FOR DUAL RELAY DRIVER Driver IC SOT-363, DRDNB21D-7, Diodes Incorporated Gate Drivers DUAL RELAY

diodes, inc

601: ¥1.65Tape & ReelTape and ReelSurface MountLead free / RoHS Compliant6SOT-363SOT-36330003000DRDNB21D-7DICT3000-55 to 150 °C-----------50V----------Zener Diodes--Compliant1.35(Max)2.2(Max)SOT-36361(Max)6-SOT-26RoHS-conformGull-wingDRDNB21D11 weeks-Non-Inverting2100mALow Side-----------NPN----------0.2W0.1ADRDNB21D-----
ZXMS6003GTA
3
ZXMS6003GTA

Self Protected Low Side MOSFET 4-Pin(3+Tab) SOT-223 T/R LSS 550mOhm 60V SOT223 SMD IC MOSFET N-CHAN 60V SOT223 MOSFET 60V IntelliFET Over Current Ctrl

diodes, inc

3261: ¥10.676Tape & ReelTape and ReelSurface MountLead free / RoHS Compliant4SOT-223SOT-22310001000ZXMS6003GTR1000-40 to 150 °C500 mOhmsN-ChannelNY/N/NA/NAN--------60 VSMD/SMT-------13 us-MOSFET--Compliant3.7(Max)6.7(Max)SOT-22341.7(Max)3-SOT-223RoHS-conformGull-wingZXMS6003GTA16 weeks1.6 ANon-Inverting11.4ALow SideAEC-Q(100)2.5 W--NANY/N/NA/NAN1550mOhm60V900mANY/N/NA/NAN-40°C-Tab-----------------
ZNBG3000Q16TC
ZNBG3000Q16TC

FET Bias Controller 16-Pin QSOP T/R LNB Fixed Bias T&R 2.5K IC GENERATOR 3BIAS 2.2V 16-QSOP MOSFET 3BIAS GENERATOR 2.2V FET BIAS CONTROLLER

diodes, inc

101785: ¥16.592Tape & ReelTape & Reel (TR)Surface MountLead free / RoHS Compliant16QSOP*25002500-2500-30 to 70 °C----------------------MOSFET----------------------5 V ~ 12 V----------40mA40mABias Controller--------------
ZNBG3010Q16TC
ZNBG3010Q16TC

FET Bias Controller 16-Pin QSOP T/R Zetex Bias gen Vd=2.2V 2.5K IC GENERATOR 3BIAS 2.2V 16-QSOP MOSFET BIAS H/V SWITCH 2.2V FET BIAS CONTROLLER AND POLARITY SWITCH

diodes, inc

101785: ¥19.924Tape & ReelTape and ReelSurface MountLead free / RoHS Compliant16QSOP*25002500-2500-40 to 70 °C----------------------MOSFET--Compliant3.99(Max)4.9(Max)QSOP161.5(Max)16-QSOP-Gull-wing---------5 V ~ 10 V----------30mA30mABias Controller--------------
ZXMS6004DGTA
2
ZXMS6004DGTA

Power Switch Lo Side 0.7A 4-Pin(3+Tab) SOT-223 T/R LSS 550mOhm 60V SOT223 SMD IC LOW SIDE DRIVER SOT223 MOSFET INTELLIFET MOSFET 60V N CHAN

diodes, inc

101: ¥3.41Tape & ReelTape and ReelSurface MountLead free / RoHS Compliant4SOT-223SOT-22310001000ZXMS6004DGTATR--40 to 150 °C500 mOhmsN-Channel0.4 Ohm---------SMD/SMT-------45 us-MOSFET15 us10 usCompliant1.8(Max)6.7(Max)SOT-22341.7(Max)3-SOT-223RoHS-conformGull-wingZXMS6004DGTA16 weeks0.9 ANon-Inverting12.2ALow SideAEC-Q(100)1.3 W3.3 to 5 V1300 mWNANY/N/NA/NAN1550mOhm60V1.3ANY/N/NA/NAN-40°C-Tab----0.5 to 6 V0.7 A------------
ZXMS6004SGTA
3
ZXMS6004SGTA

Power Switch Lo Side 0.7A 4-Pin(3+Tab) SOT-223 T/R LSS 550mOhm 60V SOT223 SMD MOSFET N-CH 60V 1.3A SOT223 MOSFET 60V N-Ch Intellifet 500mohm 1.3A 480mJ Power FET SOT-223 N channel 60 V 1.3 A, ZXMS6004SGTA, Diodes Incorporated

diodes, inc

1671: ¥2.893Tape & ReelREELSurface MountLead free / RoHS Compliant4SOT-223SOT-22310001000ZXMS6004SGTATR--40 to 150 °C--0.4 Ohm-------------------MOSFET-----------RoHS-conform-ZXMS6004SGTA12 weeks-Non-Inverting12.2ALow SideAEC-Q(100)-3.3 to 5 V1000 mWNANY/N/NA/NAN1550mOhm60V1.3ANY/N/NA/NAN-40°C------0.5 to 6 V0.7 A------------
DMN2600UFB-7
2
DMN2600UFB-7

MOSFET N-Ch Dual MOSFET 25V VDSS 8V VGSS Trans MOSFET N-CH 25V 1.3A 3-Pin DFN T/R MOSFET N-CH DFN1006-3

Diodes Inc.

105: ¥0.59963,000Tape and ReelSurface MountLead free / RoHS Compliant3-UFDFN3-DFN1006 (1.0x0.6)--DMN2600UFB-7DI3000150350 mOhm @ 200mA, 4.5VN-Channel600 mOhmsMOSFET N-Channel, Metal OxideLogic Level Gate540mW1V @ 250µA0.85nC @ 4.5V25V70.13pF @ 15V1.3A (Ta)25 VSMD/SMTDMN26SiDiodes Incorporated±82 ChannelSingle with Gate Protection DiodeEnhancement--MOSFET--Compliant0.61DFN30.473-DFN------------540--------------1251.3----MOSFET Small Signal----
DMN3024SFG-13
2
DMN3024SFG-13

MOSFET 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A Trans MOSFET N-CH 30V 7.5A 8-Pin PowerDI T/R MOSFET BVDSS: 25V~30V T&R 3K MOSFET N-CH 30V POWERDI3333-8 MOSFET N-CH 30V 7.5A POWERDI

Diodes Inc.

101: ¥4.1483,000Tape and ReelSurface MountLead free / RoHS Compliant8-PowerVDFNPowerDI3333-830003000DMN3024SFG-13DI3000- 55 C23 mOhm @ 10A, 10VN-Channel23 mOhmsMOSFET N-Channel, Metal OxideLogic Level Gate900mW2.4V @ 250µA10.5nC @ 10V30V479pF @ 15V7.5A30 VSMD/SMT*SiDiodes Incorporated25 V1 ChannelSingleEnhancement-890 mW---Compliant3.33.3PowerDI80.88---No Lead--7.5 A-----0.89 W-2200--------------1307.5+/- 25 V--------
DMG7702SFG-13
2
DMG7702SFG-13

MOSFET 30V N-Ch ENH Mode PowerDI 12A - 9.5A MOSFET BVDSS: 25V~30V T&R 3K MOSFET N-CH 30V POWERDI3333-8 MOSFET N-CH 30V 12A POWERDI

Diodes Inc.

28441: ¥3.6723,000Tape & Reel (TR)Surface MountLead free / RoHS Compliant8-PowerVDFNPowerDI3333-830003000DMG7702SFG-13DI3000- 55 C10 mOhm @ 13.5A, 10VN-Channel10 mOhmsMOSFET N-Channel, Schottky, Metal OxideLogic Level Gate890mW2.5V @ 250µA14.7nC @ 10V30V4310pF @ 15V12A30 VSMD/SMTDMG7702SiDiodes Incorporated20 V1 ChannelSingleEnhancement-890 mW----------------9.5 A-----0.89 W-------------------+/- 20 V--------
Q112680
Q112680

KIT ZENER DIODE SMD SOT-23

Diodes Inc

-1NotebookSurface Mount-----BZX2-KIT-----------------------------------------------------------------------TO-236-3, SC-59, SOT-23-3180 pcs - 10 ea of 18 valuesZener Diode SMD-
DMG7401SFG-13
2
DMG7401SFG-13

MOSFET BVDSS: 25V~30V T&R 3K MOSFET P-CH 30V POWERDI3333-8 MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K

Diodes Incorporated

421: ¥4.25253,000Tape & Reel (TR)Surface MountLead free / RoHS Compliant8-PowerVDFNPowerDI3333-830003000DMG7401SFG-13DI3000+ 150 C11 mOhm @ 12A, 20VP-Channel9 mOhmsMOSFET P-Channel, Metal OxideLogic Level Gate940mW3V @ 250µA58nC @ 10V30V2987pF @ 15V9.8A (Ta)- 30 VSMD/SMTDMG7401SiDiodes Incorporated+/- 25 V-1 P-ChannelEnhancement38 ns940 mW-22 ns15.4 ns-------58 nC----------------------------------------
DMN3025LFG-13
DMN3025LFG-13

MOSFET BVDSS: 25V~30V T&R 3K MOSFET N-CH 30V POWERDI3333-8 MOSFET N-CH 30V 7.5A POWERDI MOSFET 30V N-CH MOSFET

Diodes Incorporated

103000: ¥1.0543,000Tape & Reel (TR)Surface MountLead free / RoHS Compliant8-PowerVDFNPowerDI3333-830003000DMN3025LFG-13DI3000-18 mOhm @ 7.8A, 10VN-Channel-MOSFET N-Channel, Metal OxideLogic Level Gate2W2V @ 250µA11.6nC @ 10V30V605pF @ 15V7.5A--DMN3025SiDiodes Incorporated-1 Channel-------------------------------------------------------
ZXMP6A17E6QTA
2
ZXMP6A17E6QTA

P-CH MOS-FET 60V SOT26 MOSFET P-CH 60V 3A SOT-23-6 MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC P-CH MOS-FET 2,4A 60V SOT26

Diodes Incorporated

25571: ¥2.0583,000Tape & Reel (TR)Surface MountLead free / RoHS CompliantSOT26SOT-2630003000ZXMP6A17E6QTADITR--0.13Ohm--MOSFET P-Channel, Metal OxideLogic Level Gate1.1W3V @ 250µA17.7nC @ 10V60V637pF @ 30V2.3A (Ta)-----------------------RoHS-conform-ZXMP6A17E6QTA16 weeks2.3A----AEC-Q(101)----------P-CHANNEL-----------------60V
DMC6070LFDH-7
DMC6070LFDH-7

MOSFET BVDSS: 41V~60V MOSF N-P CH 60V 3.1A, 2.4A POWER MOSFET MOSFET BVDSS:41V-60V Power DI3030-8 MOSFET N/P-CH 60V 8POWERDI

Diodes Incorporated

103000: ¥1.18323,000Tape & Reel (TR)Surface MountLead free / RoHS Compliant8-PowerVDFNPowerDI3030-830003000DMC6070LFDH-7DITR--85 mOhm @ 1.5A, 10V--N and P-ChannelLogic Level Gate1.4W3V @ 250µA11.5nC @ 10V60V731pF @ 20V3.1A, 2.4A--------------------------------------------------------------
DMN1150UFB-7B
2
DMN1150UFB-7B

MOSFET BVDSS: 8V~24V T&R 10K MOSF N CH 12V 1.41A X1DFN10063 MOSFET N-CH MOSFET 12V MOSFET N-CH 12V 1.41A 3DFN N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated

165: ¥0.838110,000Tape & Reel (TR)Surface MountLead free / RoHS Compliant3-UFDFN3-DFN1006 (1.0x0.6)1000010000DMN1150UFB-7BDITR10000+ 150 C150 mOhm @ 1A, 4.5VN-Channel150 mOhmsMOSFET N-Channel, Metal OxideLogic Level Gate500mW1V @ 250µA1.5nC @ 4.5V12V106pF @ 10V1.41A (Ta)12 VSMD/SMTDMN1150SiDiodes Incorporated1V @ 250µA1 Channel1 N-ChannelEnhancement57 ns500 mW-30 ns34.5 ns-------1.5 nC----------------------------------------
DMN2250UFB-7B
2
DMN2250UFB-7B

MOSFET BVDSS: 8V~24V T&R 10K MOSF N CH 20V 1.35A X1DFN10063 MOSFET N-CH MOSFET 20V MOSFET N-CH 20V 1.35A 3DFN

Diodes Incorporated

100001: ¥2.78810,000Tape & Reel (TR)Surface MountLead free / RoHS Compliant3-UFDFN3-DFN1006 (1.0x0.6)1000010000DMN2250UFB-7BDITR10000+ 150 C170 mOhm @ 1A, 4.5VN-Channel170 mOhmsMOSFET N-Channel, Metal OxideLogic Level Gate500mW1V @ 250µA3.1nC @ 10V20V94pF @ 16V1.35A (Ta)20 VSMD/SMTDMN22SiDiodes Incorporated8 V1 Channel1 N-ChannelEnhancement59.4 ns500 mW-25.4 ns6.1 ns-------3.1 nC----------------------------------------
DMN3025LSS-13
2
DMN3025LSS-13

MOSFET BVDSS: 25V~30V T&R 2.5K MOSFET N CH 30V 7.2A SO-8 MOSFET 30V N-CH MOSFET

Diodes Incorporated

14681: ¥2.8562,500Tape & Reel (TR)Surface MountLead free / RoHS Compliant8-SOIC (0.154", 3.90mm Width)8-SO25002500DMN3025LSS-13DITR2500+ 150 C20 mOhm @ 10A, 10VN-Channel14 mOhmsMOSFET N-Channel, Metal OxideLogic Level Gate1.4W2V @ 250µA13.2nC @ 10V30V641pF @ 15V7.2A (Ta)30 VSMD/SMTDMN3025SiDiodes Incorporated20 V1 Channel1 N-ChannelEnhancement22.3 ns1.4 W-5.3 ns4.4 ns-------13.2 nC----------------------------------------
DMG4N65CTI
2
DMG4N65CTI

MOSFET BVDSS: 501V~650V TUBE 50PCS MOSF N CH 650V 4A ITO-220AB MOSFET N-CH MOSFET 650V 4A MOSFET N-CH 650V 4A ITO-220AB N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated

3651: ¥5.64450TubeThrough HoleContains lead / RoHS CompliantTO-220-3TO-220AB5050DMG4N65CTIDI50+ 150 C3 Ohm @ 2A, 10VN-Channel2.1 OhmsMOSFET N-Channel, Metal OxideStandard8.35W5V @ 250µA13.5nC @ 10V650V900pF @ 25V4A (Tc)650 VThrough HoleDMG4N65SiDiodes Incorporated5V @ 250µA1 Channel1 N-ChannelEnhancement40 ns8.35 W-16 ns13.8 ns-------13.5 nC----------------------------------------
DMN2016LHAB-7
2
DMN2016LHAB-7

MOSFET BVDSS: 8V~24V T&R 3K MOSF N CH DL 20V 7.5A UDFN20306 MOSFET DUAL N-CH MOSFET 20V MOSFET 2N-CH 20V 7.5A 6UDFN MOSFET 2N-CH 20V 7.5A

Diodes Incorporated

3605: ¥2.55413,000Tape & Reel (TR)Surface MountContains lead / RoHS Compliant6-UDFN Exposed Pad*30003000DMN2016LHAB-7DITR3000-15.5 mOhm @ 4A, 4.5VN-Channel30 mOhms2 N-Channel (Dual)Logic Level Gate1.2W1.1V @ 250µA16nC @ 4.5V20V1550pF @ 10V7.5A20 V-DMN2016SiDiodes Incorporated1.1V @ 250µA2 ChannelDual------------------------------------------------------
DMN3070SSN-7
2
DMN3070SSN-7

MOSFET BVDSS: 25V~30V T&R 3K MOSFET N CH 30V 4.2A, SC59 MOSFET 30V N-CH MOSFET

Diodes Incorporated

24811: ¥2.4483,000Tape & Reel (TR)Surface MountContains lead / RoHS CompliantTO-236-3, SC-59, SOT-23-3SC-5930003000DMN3070SSN-7DITR3000+ 150 C40 mOhm @ 4.2A, 10VN-Channel24 mOhmsMOSFET N-Channel, Metal OxideLogic Level Gate780mW2.1V @ 250µA13.2nC @ 10V30V697pF @ 15V4.2A (Ta)30 VSMD/SMTDMN3070SiDiodes Incorporated20 V1 Channel1 N-ChannelEnhancement4.4 ns780 mW-4.1 ns20.1 ns-------13.2 nC----------------------------------------
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