Infineon Technologies AG- 分立半导体

英飞凌科技股份公司（Infineon Technologies AG）于1999年5月1日由西门子半导体部门独立并更名成立，总部位于德国慕尼黑。公司是全球领先的半导体解决方案提供商，核心业务涵盖汽车、工业、通信及消费电子领域。主要产品线包括功率器件（如CoolMOS、OptiMOS、CoolSiC、CoolGaN系列）、微控制器（AURIX、TRAVEO、XMC系列）、传感器（磁性传感器、压力传感器、雷达芯片）以及安全芯片（SLE 78、OPTIGA系列）等。英飞凌致力于应对能源效率、出行和安全三大社会核心挑战。公司在全球多个国家拥有制造基地和研发中心，构建了完整的产业链。英飞凌在汽车电子和功率半导体领域居于市场领导地位，是全球最大的汽车半导体供应商之一。其企业口号为'永不停止思考'，彰显持续创新的精神。在中国，英飞凌曾投资成立奇梦达生产内存产品，并与本地代理商广泛合作。凭借先进的工艺技术和系统级方案，英飞凌不断推动智能化和绿色电子系统发展。

分立半导体 - 型号列表

共 270 个型号

制造商零件编号	库存	价格	标准包装数量	RoHS	包装方式	安装类型	封装形式	最大功率	导通电阻 Rds(on) (最大) @ Id, Vgs	工作温度	FET类型	FET特性	晶体管类型	Vgs(th)（最大）@ Id	漏源电压（Vdss）	漏极电流（Idss）@ Vds（Vgs=0）	输入电容（Ciss）（最大）@ Vds	连续漏极电流（Id）@ 25°C	供应商器件封装	零件号别名	额定功率	首抽头延迟	集电极-发射极饱和电压（最大）@ Vge, Ic	安装样式	配置	栅极电荷（Qg）（最大）@ Vgs	最大功耗	系列	产品类别	工厂包装数量	下降时间	最大栅源电压 Vgs	上升时间（典型）	栅极触发电压 Vgt (最大)	商标名	最小起订量	单位包装	汽车级	无铅定义	每端口功率（瓦）	供电电压 (Vcc/Vdd)	匹配码	标准交期	引脚数	其他名称	逻辑类型	热阻 @ GPM	海关税号	最大额定电流	导通电阻 RDS(On)	重量	材料表面处理	技术	阈值电压	宽度	高度	长度	元件数量	击穿电压	导通电阻（最大）	开关时间（Ton, Toff）（最大）	峰值脉冲电流（10/1000µs）	冷却的封装	尺寸/外形	位数	通道类型	卡标准	电流传输比（最小）	机械寿命	栅极电荷	供电电压	平均正向功率	制造商全称	触点电压（最大）	端接方式	直流电阻（DCR）- 初级	增益	频率	最大频率	过渡频率	噪声系数（dB典型值 @ f）	Vce饱和电压（最大）@ Ib, Ic	集电极电流（Ic）（最大）	集电极截止电流（最大）	直流电流增益 hFE (最小) @ Ic, Vce	类型	开通延迟时间	输出功能	关断延迟时间	通道数量	输入电阻	包装数量	功能
3 IPA60R520CP MOSFET COOL MOS PWR TRANS MAX 650V MOSFET N-CH 650V 6.8A TO220-3 MOSFET, N, TO-220 Infineon Technologies	55486	1: ¥9.452	500	RoHS Compliant	Tube	Through Hole	TO-220FP	30W	0.52 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	3.5V @ 250µA	600V	6.8 A	630pF @ 100V	6.8A (Tc)	PG-TO-220-FP	IPA60R520CPXK IPA60R520CPXKSA1 SP000405856	30 W	74 ns	600 V	Through Hole	Single	31nC @ 10V	:30W	IPA60R520	MOSFET	500	16 ns	:10V	12 ns	+/- 20 V	CoolMOS	-	-	-	-	-	-	-	-	:3	-	-	-	85412900	:6.8A	:520mohm	0.00195	:-	-	:3V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	24 nC	-	-	-	:650V	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 BSZ035N03LS G MOSFET 30.0V3.5mOhm 5.7mOhm N CHANNEL MOSFET MOSFET N-CH 30V 40A TSDSON-8 MOSFET N-Channel 30V 40A TSDSON8 MOSFET, N CH, 53A, 30V, PG-TSDSON-8 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 Infineon Technologies	5210	1: ¥5.576	5,000	RoHS Compliant	Reel	Surface Mount	TSDSON-8	69W	0.0035 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.2V @ 250µA	30V	40 A	4400pF @ 15V	20A (Ta), 40A (Tc)	PG-TSDSON-8 (3.3x3.3)	BSZ035N03LSGATMA1 BSZ035N03LSGXT SP000278809	2.1 W	30 ns	30 V	SMD/SMT	Single Quad Drain Triple Source	56nC @ 10V	69 W	BSZ035N03	MOSFET	-	5 ns	±20 V	5.4 ns	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	:8	BSZ035N03LSGINCT	-	-	85412900	:40A	:2.9mohm	0.002	:MSL 1 - Unlimited	-	:1V	3.4mm	1.1mm	3.4mm	1	30 V	5.7 mΩ	7.8 ns	40 A	PG-TSDSON-8	3.4 x 3.4 x 1.1mm	8	Enhancement	DC/DC Converter, SMPS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 BSC025N03MS G MOSFET OptiMOS 3 M-Series PWR-MOSFET 30V 100A N-CH 30V 100A 2.5mOhm TDSON-8 MOSFET N-CH 30V 100A TDSON-8 MOSFET N-Channel 30V 100A TSDSON8 MOSFET, N CH, 100A, 30V, PG-TDSON-8 Infineon N沟道 MOSFET 晶体管 , 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M Infineon Technologies	8251	1: ¥6.46	5,000	RoHS Compliant	Reel	SMD	TSDSON-8	83W	0.0025 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 250µA	30V	23 A	7600pF @ 15V	23A (Ta). 100A (Tc)	PG-TDSON-8 (5.15x6.15)	BSC025N03MSGATMA1 BSC025N03MSGXT SP000311505	2.5 W	29 ns	30 V	SMD/SMT	Single Quad Drain Triple Source	36nC	83 W	BSC025N03	MOSFET	-	11 ns	±20 V	11 ns	+/- 16 V	OptiMOS	5000	5000	NO	RoHS-conform	83W	30V	BSC025N03MS G	21 weeks	:8	BSC025N03MSGINCT	YES	1.5K/W	85412900	:100A	:2.1mohm	0.002	:MSL 1 - Unlimited	OptiMOS	:1V	6.1mm	1.1mm	5.35mm	1	30 V	3 mΩ	22 ns	100 A	PG-TDSON-8	5.35 x 6.1 x 1.1mm	8	Enhancement	5 V Driver, SMPS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 BSC019N04NS G MOSFET OptiMOS 3 PWR TRANST 40V 100A MOSFET 40V 100A 1.9mOHM SSO8 MOSFET N-CH 40V 100A TDSON-8 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 Infineon Technologies	6315	1: ¥7.548	5,000	RoHS Compliant	Reel	SMD	TDSON	125W	0.0019 Ohms	+ 150 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	4V @ 85µA	40V	29 A	8800pF @ 20V	30A (Ta), 100A (Tc)	PG-TDSON-8 (5.15x6.15)	BSC019N04NSGATMA1 BSC019N04NSGXT SP000388299	2.5 W	33 ns	40 V	SMD/SMT	Single Quad Drain Triple Source	84nC	-	BSC019N04	MOSFET	5000	6.6 ns	-	5.6 ns	+/- 20 V	OptiMOS	5000	5000	NO	RoHS-conform	125W	40V	BSC019N04NS G	21 weeks	-	BSC019N04NS GCT	NO	1K/W	-	-	-	-	-	OptiMOS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 IPB080N03L G MOSFET OptiMOS 3 PWR TRANS 30V 50A N-CH 30V 50A 8mOhm TO263-3 MOSFET N-CH 30V 50A TO263-3 MOSFET, N CH, 50A, 30V, PG-TO263-3 MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 Infineon Technologies	1873	1: ¥5.644	1,000	RoHS Compliant	Reel	SMD	TO-263	47W	0.008 Ohms	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.2V @ 250µA	30V	50 A	1900pF @ 15V	50A	PG-TO263-2	IPB080N03LGATMA1 IPB080N03LGXT SP000304104	47 W	18 ns	30 V	SMD/SMT	Single	8.7nC	:47W	IPB080N03	MOSFET	1000	2.8 ns	:10V	3.6 ns	+/- 20 V	OptiMOS	1000	1000	NO	RoHS-conform	47W	30V	IPB080N03L G	13 weeks	:3	IPB080N03L GCT	YES	3.2K/W	85412900	:50A	:6.7mohm	0.002	:MSL 1 - Unlimited	-	:1V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 IPB06N03LA G MOSFET N-CH 25V 50A MOSFET N-CH 25V 50A D2PAK Infineon Technologies	10	1: ¥11.764	1,000	RoHS Compliant	Reel	Surface Mount	TO-263	83W	9.5 mOhms	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 40µA	25V	50 A	2653pF @ 15V	50A (Tc)	PG-TO263-3	-	83 W	30 ns	25 V	SMD/SMT	Single	22nC @ 5V	-	-	MOSFET	1000	4.4 ns	-	30 ns	+/- 20 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	58 S / 29 S	End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.	-	-	-	-	-	-	58 S / 29 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BFP 740F H6327 Transistors RF Silicon Germanium RF BIP TRANSISTOR TRANS RF NPN 42GHZ 4.7V SOT343 Transistors RF Bipolar RF BIP TRANSISTOR RF Bipolar Transistors RF BIP TRANSISTOR Infineon Technologies	1509	1: ¥3.332	3,000	RoHS Compliant	Reel	Surface Mount	TSFP-4	160mW	-	+ 150 C	-	-	NPN	-	-	-	-	-	4-TSFP	BFP740FH6327XT BFP740FH6327XTSA1 SP000750416	160 mW	-	13 V	SMD/SMT	-	-	-	BFP740	Transistors RF Silicon Germanium	3000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SiGe	-	0.8 mm	0.55 mm	1.4 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	4 V	160 mW	Infineon Technologies	-	-	-	27.5dB	42 GHz	42 GHz	42GHz	0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz	1.2 V	30mA	30 mA	400	RF Silicon Germanium	-	-	-	-	-	-	-
5 IPP041N04N G MOSFET OptiMOS 3 Power TRANSITOR 40V 80A N-CH 40V 80A 4mOhm TO220-3 MOSFET N-CH 40V 80A TO220-3 MOSFET, N CH, 80A, 40V, PG-TO220-3 Infineon , N沟道 MOSFET, 80 A, Vds=40 V, 3针 TO-220封装 MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 Infineon Technologies	30	1: ¥5.048	500	RoHS Compliant	Tube	THT	TO-220	94W	0.0041 Ohms	+ 175 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	4V @ 45µA	40V	80 A	4500pF @ 20V	80A (Tc)	PG-TO220-3	IPP041N04NGHKSA1 IPP041N04NGXKSA1 SP000680790	94 W	23 ns	40 V	Through Hole	Single	42nC	:94W	IPP041N04	MOSFET	500	4.8 ns	:10V	3.8 ns	+/- 20 V	OptiMOS	500	500	NO	RoHS-conform	94W	40V	IPP041N04N G	1 week	:3	-	NO	1.6K/W	85412900	:80A	:3.3mohm	0.002	:-	-	:2V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BTS110 E3045A MOSFET N-Channel 100V TEMPFET N-CH 100V 10A 200mOhm TO263-3 _NO ROHS MOSFET N-CH 100V 10A TO-220 Infineon Technologies	10	650: ¥28.356	1,000	No	Reel	Surface Mount	TO-220AB SMD	40W	200 mOhms	+ 150 C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	3.5V @ 1mA	100V	10 A	600pF @ 25V	10A (Tc)	TO-220AB	BTS110E3045ANT BTS110E3045ANTMA1 SP000011183	40000 mW	70 ns	100 V	Through Hole	Single	-	-	-	-	1000	-	-	-	-	-	1000	1000	NO	Leaded	40W	100V	BTS110 E3045A	18 weeks	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NRND: Not recommended for new designs.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BTS113A E3064 MOSFET N-Channel 60V TEMPFET MOSFET N-CH 60V 11.5A TO-220AB Infineon Technologies	10	245: ¥29.376	500	No	Tube	Through Hole	TO-220AB SMD	40W	170 mOhms at 4.5 V	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.5V @ 1mA	60V	11.5 A	560pF @ 25V	11.5A (Tc)	P-TO220AB	BTS113AE3064NK BTS113AE3064NKSA1 SP000011189	40000 mW	45 ns	60 V	Through Hole	Single	-	-	-	-	500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NRND: Not recommended for new designs.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BTS113A E3045A MOSFET N-Channel 60V TEMPFET N-CH 55V 15A 170mOhm TO263 _NO ROHS MOSFET N-CH 60V 11.5A TO-220AB Infineon Technologies	10	490: ¥29.376	1,000	No	Reel	SMD	TO-220AB SMD	40W	170 mOhms at 4.5 V	+ 150 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.5V @ 1mA	60V	11.5 A	560pF @ 25V	11.5A (Tc)	TO-220AB	BTS113AE3045ANT BTS113AE3045ANTMA1 SP000011188	40000 mW	45 ns	60 V	Through Hole	Single	n.s.nC	-	-	-	1000	-	-	-	-	-	1000	1000	AEC-Q(100)	Leaded	40W	60V	BTS113A E3045A	18 weeks	-	-	YES	3.1K/W	-	-	-	-	-	TempFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NRND: Not recommended for new designs.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD70P04P4-09 LED DRVR 9V/12V/15V/18V/24V 36-Pin DSO MOSFET -40V 8.9mOHM AECQ TO252 MOSFET P-Channel -40V MOSFET MOSFET P-Ch -40V -73A DPAK-2 OptiMOS-P2 infineon technologies	10	1520: ¥3.6448	Tape & Reel	RoHS Compliant	Reel	SMD	36DSO	-	n.s.Ohm	-	-	-	-	-	-	-73A	-	-	-	IPD70P04P409ATMA1 SP000709326	-	-	-	-	-	70nC	3000 mW	IPD70P04	-	-	-	-	-	-	-	2500	2500	AEC-Q(100)	RoHS-conform	75W	-40V	IPD70P04P4-09	22 weeks	-	-	NO	2K/W	-	-	-	-	-	OptiMOS P2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	5.5 to 32 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BUZ31 H MOSFET N-Channel 200V Transistor MOSFET N-CH 200V 14.5A TO220-3 MOSFET N-Channel 200V 14.5A TO220 Infineon Technologies	354	1: ¥12.92	500	Compliant	Tube	Through Hole	TO-220-3	95W	200 mOhm @ 9A, 5V	+150 °C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	4V @ 1mA	200V	14.5 A	1120pF @ 25V	14.5A (Tc)	PG-TO220-3	BUZ31HXKSA1 SP000682992	95 W	150 ns	200 V	Through Hole	Single	-	95 W	BUZ31	-	-	60 nS	±20 V	50 nS	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.57mm	9.45mm	10.36mm	1	200 V	0.2 Ω	12 ns	14.5 A	PG-TO-220-3	10.36 x 4.57 x 9.45mm	3	Enhancement	Power MOSFET	12 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 BSC320N20NS3 G MOSFET N-KANAL POWER MOS MOSFET 200V 32mOhm 36A SSO-8 MOSFET N-CH 200V 36A TDSON-8 MOSFET N-Channel 200V 36A TDSON8 Infineon , N沟道 MOSFET, 36 A, Vds=200 V, 8针 TDSON封装 MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 Infineon Technologies	8143	1: ¥18.292	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TDSON-8	125W	n.s.Ohm	+150 °C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	4V @ 90µA	200V	36A	2350pF @ 100V	36A (Tc)	PG-TDSON-8 (5.15x6.15)	BSC320N20NS3GATMA1 SP000676410	125 W	22 ns	200 V	SMD/SMT	Quad Drain, Single Gate, Triple Source	22nC	125 W	BSC320N20	MOSFET	5000	4 ns	±20 V	9 ns	20 V	OptiMOS	1	5000	NO	RoHS-conform	125W	200V	BSC320N20NS3 G	21 weeks	-	BSC320N20NS3 GCT	NO	1K/W	-	-	-	-	-	OptiMOS	-	6.1mm	1.1mm	5.35mm	1	200 V	32 mΩ	14 ns	36 A	PG-TDSON-8	5.35 x 6.1 x 1.1mm	8	Enhancement	High Frequency Switching, Synchronous Rectification	58 S, 29 S	-	22 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 BSC057N03LS G MOSFET OptiMOS 3 N-CH 30V 71A 5.7mOhms MOSFET N-CH 30V 71A TDSON-8 MOSFET, N CH, 71A, 30V, PG-TDSON-8 MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 Infineon Technologies	7818	1: ¥4.896	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	Surface Mount	8-PowerTDFN	45W	5.7 mOhm @ 30A, 10V	:-55°C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	:N Channel	2.2V @ 250µA	30V	-	2400pF @ 15V	17A (Ta), 71A (Tc)	PG-TDSON-8 (5.15x6.15)	-	-	-	-	-	-	30nC @ 10V	:45W	-	-	-	-	:10V	-	-	-	-	-	-	-	-	-	-	-	:8	BSC057N03LSGINCT	-	-	85412900	:71A	:4.8mohm	0.002	:MSL 1 - Unlimited	-	:1V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 BSZ040N04LS G MOSFET OptiMOS 3 PWR TRANS 40V 40A N-CH 40V 40A 4.0mOhm S3O8 MOSFET N-CH 40V 40A TSDSON-8 MOSFET N-Channel 40V 18A TSDSON8 Infineon OptiMOS 3 系列 Si N沟道 MOSFET , 40 A, Vds=40 V, 8针 TSDSON封装 MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 Infineon Technologies	599	541: ¥3.7128	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TSDSON-8	69W	0.0056Ohm	+150 °C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	-	2V @ 36µA	40V	40A	5100pF @ 20V	18A (Ta), 40A (Tc)	PG-TSDSON-8 (3.3x3.3)	-	-	33 ns	-	-	Quad Drain, Single Gate, Triple Source	31nC	69 W	-	-	-	-	±20 V	-	-	-	5000	5000	NO	RoHS-conform	69W	40V	BSZ040N04LS G	22 weeks	-	BSZ040N04LSGINCT	YES	1.8K/W	-	-	-	-	-	OptiMOS	-	3.4mm	1.1mm	3.4mm	1	40 V	5.6 mΩ	8.5 ns	40 A	PG-TSDSON-8	3.4 x 3.4 x 1.1mm	8	Enhancement	DC/DC Converter, SMPS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 IPP072N10N3 G MOSFET N-KANAL POWER MOS MOSFET N-CH 100V 80A TO220-3 MOSFET N-Channel 100V 80A OptiMOS3 TO220 Infineon , N沟道 MOSFET, 80 A, Vds=100 V, 3针 TO-220封装 MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 Infineon Technologies	746	1: ¥10.676	500	Compliant	Tube	Through Hole	TO-220-3	150W	7.2 mOhm @ 80A, 10V	+175 °C	MOSFET N-Channel, Metal Oxide	Standard	N-Channel	3.5V @ 90µA	100V	80 A	4910pF @ 50V	80A (Tc)	TO-220-3	IPP072N10N3GXKSA1 SP000680830	150 W	37 ns	100 V	Through Hole	Single	68nC @ 10V	150 W	IPP072N10	MOSFET	500	9 ns	±20 V	37 ns	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	3	-	-	-	-	-	-	-	-	Si	-	15.95mm	4.57mm	10.36mm	1	100 V	7.2 mΩ	19 ns	80 A	PG-TO-220-3	10.36 x 15.95 x 4.57mm	3	Enhancement	High Frequency Switching, Synchronous Rectification	50 S	-	68 nC	100 V	150 W	Infineon Technologies	-	-	-	-	-	-	-	-	-	-	-	-	-	19 ns	增强	37 ns	1 Channel	7.2 mΩ	TO-220	Y
5 IPD036N04L G MOSFET OptiMOS 3 PWR TRANS 40V 90A N-CH 40V 90A 4mOhm TO252-3 MOSFET N-CH 40V 90A TO252-3 MOSFET, N CH, 90A, 40V, PG-TO252-3 Infineon OptiMOS 3 系列 Si N沟道 MOSFET , 90 A, Vds=40 V, 3针 TO-252封装 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3 Infineon Technologies	520	1: ¥6.936	2,500	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TO252-3	94W	0.0049Ohm	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 45µA	40V	90A	6300pF @ 20V	90A	PG-TO252-3	IPD036N04LGBTMA1 SP000387945	94 W	37 ns	40 V	SMD/SMT	Single	78nC	:94W	IPD036N04	MOSFET	2500	6 ns	:10V	5.4 ns	+/- 20 V	OptiMOS	2500	2500	NO	RoHS-conform	94W	40V	IPD036N04L G	14 weeks	:3	IPD036N04L GCT	YES	1.6K/W	85412900	:90A	:3mohm	0.002	:MSL 1 - Unlimited	OptiMOS	:1.2V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 IPB055N03L G MOSFET OptiMOS 3 PWR TRANS 30V 50A MOSFET N-CH 30V 50A TO-263-3 MOSFET, N CH, 50A, 30V, PG-TO263-3 Infineon OptiMOS 3 系列 Si N沟道 MOSFET , 50 A, Vds=30 V, 2针+焊片 PG-TO-263-3封装 MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 Infineon Technologies	859	1: ¥6.936	1,000	Lead free / RoHS Compliant	Tape & Reel (TR)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	68W	5.5 mOhm @ 30A, 10V	+ 175 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2.2V @ 250µA	30V	50 A	3200pF @ 15V	50A (Tc)	PG-TO263-2	IPB055N03LGATMA1 SP000304110	68 W	25 ns	30 V	SMD/SMT	Single	31nC @ 10V	:68W	IPB055N03	MOSFET	1000	4 ns	:10V	5.2 ns	+/- 20 V	OptiMOS	-	-	-	-	-	-	-	-	:3	IPB055N03LGINDKR	-	-	85412900	:50A	:4.6mohm	0.002	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 BSZ130N03MS G MOSFET OptiMOS 3 M-Series N-CH 30V 35A 13mOhm S3O8 MOSFET N-CH 30V 35A TSDSON-8 MOSFET, N CH, 35A, 30V, PG-TSDSON-8 MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M Infineon Technologies	5186	1: ¥4.012	5,000	Lead free / RoHS Compliant	Tape & Reel (TR)	SMD	TSDSON-8	25W	0.017Ohm	- 55 C	MOSFET N-Channel, Metal Oxide	Logic Level Gate	N-Channel	2V @ 250µA	30V	35A	1300pF @ 15V	9A (Ta), 35A (Tc)	-	BSZ130N03MSGATMA1 SP000313122	2.1 W	13 ns	30 V	SMD/SMT	Single Quad Drain Triple Source	6.1nC	:25W	BSZ130N03	MOSFET	-	2 ns	:10V	2.2 ns	+/- 20 V	OptiMOS	5000	5000	NO	RoHS-conform	25W	30V	BSZ130N03MS G	21 weeks	:8	BSZ130N03MSGINCT	YES	5K/W	85412900	:35A	:9.2mohm	0.002	:MSL 1 - Unlimited	-	:1V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

第 1 / 14 页

Infineon Technologies AG- 分立半导体

分立半导体 - 型号列表

零件号别名

导通电阻 Rds(on) (最大) @ Id, Vgs

输入电容（Ciss）（最大）@ Vds

栅极电荷（Qg）（最大）@ Vgs

连续漏极电流（Id）@ 25°C

漏极电流（Idss）@ Vds（Vgs=0）

系列

最大功率

首抽头延迟

Vgs(th)（最大）@ Id

封装形式

下降时间

额定功率

上升时间（典型）

最大功耗

供应商器件封装

匹配码

其他名称

导通电阻 RDS(On)

最大额定电流

集电极-发射极饱和电压（最大）@ Vge, Ic

每端口功率（瓦）

热阻 @ GPM

漏源电压（Vdss）

标准包装数量

工作温度

导通电阻（最大）

开关时间（Ton, Toff）（最大）

供电电压 (Vcc/Vdd)

标准交期

工厂包装数量

峰值脉冲电流（10/1000µs）

宽度

最小起订量

技术

RoHS

阈值电压

安装类型

击穿电压

高度

长度

尺寸/外形

卡标准

单位包装

电流传输比（最小）

栅极电荷

晶体管类型

栅极触发电压 Vgt (最大)

包装方式

引脚数

配置

冷却的封装

供电电压

商标名

产品类别

最大栅源电压 Vgs

FET特性

重量

安装样式

材料表面处理

位数

汽车级

无铅定义

逻辑类型

机械寿命

平均正向功率