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Efficient Power Conversion Corporation

Efficient Power Conversion Corporation- 双极型晶体管

高效电源转换公司（Efficient Power Conversion Corporation，简称EPC）成立于2007年11月，总部位于美国加利福尼亚州埃尔塞贡多市，是一家无晶圆厂半导体企业。公司专注于基于氮化镓（GaN）的增强型功率管理器件的设计、研发、营销与销售。EPC率先在全球推出增强型硅基氮化镓（eGaN®）晶体管，开启了功率半导体性能的新纪元。其产品组合包括分立式eGaN场效应晶体管（FET）、集成电路及功率模块，在开关速度、尺寸和效率上远超传统硅基功率MOSFET。这些器件广泛应用于DC-DC转换器、激光雷达、电机驱动、射频包络跟踪等场景，助力设备实现更高功率密度和更小体积。EPC服务市场涵盖服务器数据中心、汽车电子、通信基站、消费电子以及工业电源等领域。凭借eGaN技术，器件额定电压覆盖15 V至200 V，提供卓越的开关特性与热管理能力。公司采用成熟的硅代工工艺，将氮化镓的高性能与硅制造的可扩展性和可靠性完美结合。历经十余年发展，EPC已成为氮化镓功率器件的领先供应商，推动全球电源系统向高效、紧凑方向演进。公司持续完善全球技术支持网络，通过参考设计和评估板加速客户产品上市时间。

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双极型晶体管 - 型号列表

共 28 个型号

连续漏极电流（Id）@ 25°C

其他名称

栅极电荷（Qg）（最大）@ Vgs

输入电容（Ciss）（最大）@ Vds

导通电阻 Rds(on) (最大) @ Id, Vgs

Vgs(th)（最大）@ Id

标准包装数量

漏源电压（Vdss）

包装方式

RoHS

安装类型

封装形式

供应商器件封装

制造商零件编号库存价格标准包装数量RoHSFET类型FET特性Vgs(th)（最大）@ Id导通电阻 Rds(on) (最大) @ Id, Vgs栅极电荷（Qg）（最大）@ Vgs漏源电压（Vdss）输入电容（Ciss）（最大）@ Vds连续漏极电流（Id）@ 25°C包装方式安装类型供应商器件封装封装形式其他名称系列
EPC8007ENGR
EPC8007ENGR

TRAN GAN 40V 3.8A BUMPED DIE

EPC

6010: ¥71.4010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA160 mOhm @ 500mA, 5V0.302nC @ 20V40V39pF @ 20V3.8A (Ta)Bulk*DieDie917-EPC8007ENGR-
EPC8007TENGR
EPC8007TENGR

TRANS GAN 40V 3.8A BUMPED DIE

EPC

242: ¥78.542Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA160 mOhm @ 500mA, 5V0.302nC @ 20V40V39pF @ 20V3.8A (Tc)Bulk*DieDie--
EPC8008ENGR
EPC8008ENGR

TRAN GAN 40V 2.7A BUMPED DIE

EPC

3010: ¥106.7610Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA325 mOhm @ 500mA, 5V0.177nC @ 20V40V25pF @ 20V2.7A (Ta)Bulk*DieDie917-EPC8008ENGR-
EPC8008TENGR
EPC8008TENGR

TRANS GAN 40V 2.7A BUMPED DIE

EPC

262: ¥117.4362Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA325 mOhm @ 500mA, 5V0.177nC @ 20V40V25pF @ 20V2.7A (Tc)Bulk*DieDie--
EPC8005ENGR
EPC8005ENGR

TRAN GAN 65V 2.9A BUMPED DIE

EPC

10010: ¥122.4010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA275 mOhm @ 500mA, 5V0.218nC @ 32.5V65V29pF @ 32.5V2.9A (Ta)Bulk*DieDie917-EPC8005ENGR-
EPC2018
EPC2018

TRANS GAN 150V 12A BUMPED DIE

EPC

88851: ¥85.068500Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 3mA25 mOhm @ 6A, 5V7.5nC @ 5V150V540pF @ 100V12A (Ta)Tape & Reel (TR)Surface MountDieDie917-1034-2-
EPC8004ENGR
EPC8004ENGR

TRAN GAN 40V 4.4A BUMPED DIE

EPC

23010: ¥133.9610Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA125 mOhm @ 500mA, 5V0.358nC @ 20V40V45pF @ 20V4.4A (Ta)Bulk*DieDie917-EPC8004ENGR-
EPC2815
EPC2815

TRANS GAN 40V 33A BUMPED DIE

EPC

9581: ¥82.484100Contains lead / RoHS non-compliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 9mA4 mOhm @ 33A, 5V11.6nC @ 5V40V1200pF @ 20V33A (Ta)Tape & Reel (TR)Surface MountDieDie917-1036-2*
EPC2801
EPC2801

TRANS GAN 100V 25A BUMPED DIE

EPC

900100: ¥65.314100Contains lead / RoHS non-compliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 5mA7 mOhm @ 25A, 5V10nC @ 5V100V950pF @ 50V25A (Ta)Tape & Reel (TR)Surface MountDieDie917-1035-2-
EPC2818
EPC2818

TRANS GAN 150V 12A BUMPED DIE

EPC

101: ¥175.10100Contains lead / RoHS non-compliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 3mA25 mOhm @ 6A, 5V7.5nC @ 5V150V540pF @ 100V12A (Ta)Tape & Reel (TR)Surface MountDieDie917-1037-2*
EPC8009ENGR
EPC8009ENGR

TRAN GAN 65V 4.1A BUMPED DIE

EPC

15010: ¥122.4010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate700mV @ 250µA138 mOhm @ 500mA, 5V0.380nC @ 32.5V65V47pF @ 32.5V4.1A (Ta)Bulk*DieDie917-EPC8009ENGR-
EPC8002ENGR
EPC8002ENGR

TRANS GAN 65V 2A BUMPED DIE

EPC

29010: ¥123.0810Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate720mV @ 250µA530 mOhm @ 500mA, 5V0.141nC @ 32.5V65V21pF @ 32.5V2A (Ta)BulkSurface MountDieDie917-EPC8002ENGR-
EPC8003ENGR
EPC8003ENGR

TRAN GAN 100V 2.5A BUMPED DIE

EPC

6010: ¥591.6010Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate750mV @ 250µA300 mOhm @ 500mA, 5V0.315nC @ 50V100V38pF @ 50V2.5A (Ta)Bulk*DieDie917-EPC8003ENGR-
EPC8002TENGR
EPC8002TENGR

TRANS GAN 65V 2A BUMPED DIE

EPC

242: ¥135.3882Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA530 mOhm @ 500mA, 5V0.141nC @ 32.5V65V21pF @ 32.5V2A (Tc)Bulk*DieDie--
EPC8004TENGR
EPC8004TENGR

TRANS GAN 40V 4.4A BUMPED DIE

EPC

102: ¥147.3562Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA125 mOhm @ 500mA, 5V0.358nC @ 20V40V45pF @ 20V4.4A (Tc)Bulk*DieDie--
EPC8005TENGR
EPC8005TENGR

TRANS GAN 65V 2.9A BUMPED DIE

EPC

102: ¥134.642Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA275 mOhm @ 500mA, 5V0.218nC @ 32.5V65V29pF @ 32.5V2.9A (Tc)****--
EPC8010ENGR
EPC8010ENGR

TRANS GAN 100V BUMPED DIE TRANS GAN 100V 3.4A BUMPED DIE

EPC

9010: ¥124.4410Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA160 mOhm @ 500mA, 5V0.354nC @ 50V100V47pF @ 50V3.4A (Ta)***-917-EPC8010ENGR*
EPC8003TENGR
EPC8003TENGR

TRANS GAN 100V 2.5A BUMPED DIE

EPC

222: ¥137.6322Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA300 mOhm @ 500mA, 5V0.315nC @ 50V100V38pF @ 50V2.5A (Tc)Bulk*DieDie--
EPC8009TENGR
EPC8009TENGR

TRANS GAN 65V 4.1A BUMPED DIE

EPC

102: ¥134.642Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA138 mOhm @ 500mA, 5V0.380nC @ 32.5V65V47pF @ 32.5V4.1A (Tc)Bulk*DieDie--
EPC8010TENGR
EPC8010TENGR

TRANS GAN 100V BUMPED DIE TRANS GAN 100V 3.4A BUMPED DIE

EPC

382: ¥136.8842Lead free / RoHS CompliantGaNFET N-Channel, Gallium NitrideLogic Level Gate2.5V @ 250µA160 mOhm @ 500mA, 5V0.354nC @ 50V100V47pF @ 50V3.4A (Ta)***-917-EPC8010TENGR*
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