Toshiba Corporation- 触发二极管

东芝株式会社是一家日本跨国综合企业，总部位于东京港区，由芝浦制作所和东京电气于1939年合并成立，历史可追溯至1875年。核心业务涵盖半导体、存储解决方案、基础设施系统和数字解决方案等领域。在半导体领域，东芝提供分立器件、光电器件、模拟IC和微控制器等丰富产品线。重点产品系列包括光耦TLP系列、功率MOSFET（如SSM和DT系列）以及IGBT模块（如MG系列）。东芝还推出基于ARM的TXZ系列微控制器，用于嵌入式应用，以及面向工业和汽车市场的电机驱动IC。自1986年以来，东芝一直位居全球光电器件和分立半导体供应商第一位，行业地位显著。其技术优势体现在专有半导体工艺和高效功率器件上，如碳化硅（SiC）功率产品。东芝电子器件与存储事业群持续在物联网、汽车和数据中心等领域推动创新。凭借卓越的品质和可靠性传承，东芝成为全球电子制造商值得信赖的合作伙伴。

触发二极管 - 型号列表

共 38 个型号

制造商零件编号	库存	价格	配置	安装类型	输入电容（Ciss）（最大）@ Vds	封装形式	工作温度	标准包装数量	最大栅源电压 Vgs	RoHS	包装方式	晶体管类型	连续漏极电流（Id）@ 25°C	FET类型	额定功率	集电极-发射极饱和电压（最大）@ Vge, Ic	导通电阻（最大）	漏源电压（Vdss）	漏极电流（Idss）@ Vds（Vgs=0）	高度	安装样式	供应商器件封装	击穿电压	峰值脉冲电流（10/1000µs）	最大功率	长度	通道类型	最大功耗	Vgs(th)（最大）@ Id	栅极电荷（Qg）（最大）@ Vgs	其他名称	工厂包装数量	平均正向功率	系列	制造商全称	元件数量	冷却的封装	位数	卡标准	FET特性	导通电阻 Rds(on) (最大) @ Id, Vgs	宽度	尺寸/外形	栅极触发电压 Vgt (最大)	输入电容	截止电压（VGS off）@ Id	产品类别	通道数量	技术	SVHC	海关税号	阈值电压	最大额定电流	导通电阻 RDS(On)	触点电压（最大）	重量	端接方式	引脚数	材料表面处理	电流传输比（最小）	下降时间	栅极电荷	上升时间（典型）	首抽头延迟	开关时间（Ton, Toff）（最大）	产品	类型	标准封装名称	欧盟RoHS	引脚样式	包装数量	峰值脉冲电流（8/20µs）	漏电流（最大）	击穿电压（V(BR)GSS）
TIM6472-45SL TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 125W Trans JFET 15V 20A 3-Pin 2-16G1B toshiba	-		Single	Screw	-	32-16G1B	-65 to 175 °C	Trays, Rail / Tube	-5 V	-	-	-	-	-	-	-	-	-	-	-	-	-	15 V	20000 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TIM5964-4UL TRANSISTOR,GAAS FET INTERNALLY MATCHED,6GHZ,23W Trans JFET 15V 3.5A 3-Pin 2-11D1B toshiba	-		Single	Screw	-	32-11D1B	-65 to 175 °C	Trays	-5 V	-	-	-	-	-	-	-	-	-	-	-	-	-	15 V	3500 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCP8103-H(TE8> Trans MOSFET P-CH 40V 4.8A 8-Pin PS T/R toshiba	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SSM3J118TU(TE85L) MOSFET Vds=-30V Id=-1.4A 3Pin MOSF 30V 1.4A UFM MOSFET P-CH 30V 1.4A UFM Toshiba	100	1: ¥3.264	Single	*	137pF @ 15V	3-SMD, Flat Leads	+ 150 C	3,000	20 V	Lead free / RoHS Compliant	Tape & Reel (TR)	P-Channel	1.4A (Ta)	MOSFET P-Channel, Metal Oxide	800 mW	- 30 V	360 mOhms	30V	- 1.4 A	0.7 mm	SMD/SMT	UFM	-	-	800mW	2 mm	Enhancement	-	-	-	SSM3J118TU(TE85L)CT	3000	800 mW	SSM3J118	Toshiba	-	-	-	-	Logic Level Gate, 4V Drive	240 mOhm @ 650mA, 10V	-	-	-	-	-	MOSFET	1 Channel	Si	-	-	-	-	-	-	-	-	-	-	1.5 S / 0.8 S	-	-	-	-	-	MOSFET Small Signal	Small Signal	-	-	-	-	-	-	-
SSM6K18TU(TE85L,F) MOSFET Vds=20V Id=4A 6Pin MOSFET, N CH, 4A, 20V, SSOTFMLP Toshiba	10	1: ¥1.2172	Single	-	-	ES-6	:150°C	-	:4V	RoHS Compliant	Reel	N-Channel	:4A	-	500 mW	20 V	-	:20V	4 A	-	Through Hole	-	-	-	-	-	-	:500mW	-	-	-	3000	-	-	-	-	-	-	-	-	34 mOhms	-	-	-	-	-	MOSFET	-	-	:No SVHC (20-Jun-2013)	85412900	:1.1V	:4A	:40mohm	:20V	0.0005	:SMD	:6	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 TPC6006-H(TE85L,F) MOSFET MOSFET N-Ch 40V 3.9A MOSFET N-CH 40V 3.9A VS6 2-3T1A TPC6006-H(TE85L,F), N-channel MOSFET Transistor 3.9A 40V, 6-Pin VS MOSFET, N CH, 3.9A, 40V, TSOP6 Toshiba	10	1: ¥1.836	Quad Drain, Single	Surface Mount	251pF @ 10V	SOT-23-6 Thin, TSOT-23-6	+150 °C	3,000	±20 V	Compliant	Tape & Reel (TR)	:N Channel	3.9A (Ta)	MOSFET N-Channel, Metal Oxide	-	-	0.075 Ω	40V	-	0.7mm	-	VS-6 (2.9x2.8)	40 V	3.9 A	-	2.9mm	Enhancement	2.2 W	2.3V @ 1mA	4.4nC @ 10V	-	-	-	-	-	1	VS	6	Power MOSFET	Logic Level Gate	75 mOhm @ 1.9A, 10V	1.6mm	2.9 x 1.6 x 0.7mm	-	-	-	-	-	-	:No SVHC (20-Jun-2013)	85412900	:2.3V	:3.9A	:75mohm	:40V	0.0004	:SMD	:6	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPC8018-H(TE12L,Q) MOSFET PW TR N-Ch 30V 18A 1.9W 3.5mOhms Trans MOSFET N-CH 30V 18A 8-Pin SOP T/R TPC8018-H(TE12L,Q), N-channel MOSFET Transistor, 18A 30V, 8-Pin SOP Toshiba	5267	5: ¥11.1384	Quad Drain, Single, Triple Source	Surface Mount	2265 pF V @ 10	-	+150 °C	-	±20 V	Compliant	Tape and Reel	-	-	-	-	-	0.005 Ω	-	-	1.5mm	-	-	30 V	18 A	-	-	Enhancement	1.9 W	-	21 nC V @ 5, 38 nC V @ 10	-	-	-	-	-	1	SOP	8	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SOIC	Compliant	Gull-wing	SOP	-	-	-
2SK4103(TE16L1,NQ) MOSFET N-CH 500V 5A PW-MOLD 2SK4103(TE16L1,NQ), N-channel MOSFET Transistor 5A 500V, 3-Pin PW Mold Toshiba	8818	10: ¥6.6572	Single	Surface Mount	-	-	+150 °C	-	-	-	-	-	-	-	-	-	1.5 Ω	-	-	2.3mm	-	-	500 V	5 A	-	6.5mm	N	40 W	-	16 nC V @ 10	-	-	-	-	-	1	PW Mold	3	Power MOSFET	-	-	5.5mm	6.5 x 5.5 x 2.3mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 2SK3566(STA4,Q,M) MOSFET N-CH 900V 2.5A TO-220SIS MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm MOSFET, N, 900V, TO-220SIS Toshiba	796	1: ¥6.405	Single	Through Hole	470pF @ 25V	TO-220-3 Full Pack	- 55 C	50	:10V	RoHS Compliant	Tube	N-Channel	2.5A (Ta)	MOSFET N-Channel, Metal Oxide	40 W	900 V	-	900V	2.5 A	-	Through Hole	TO-220SIS	-	-	40W	-	-	:40W	4V @ 1mA	12nC @ 10V	-	-	-	-	-	-	-	-	-	Standard	6.4 Ohm @ 1.5A, 10V	-	-	30 V	-	-	MOSFET	-	-	:No SVHC (20-Jun-2013)	85412900	:4V	:2.5A	:6.4ohm	:900V	0.0017	:Through Hole	:3	:-	2 S	30 ns	12 nC	20 ns	-	-	-	-	-	-	-	-	:7.5A	-	-
2 2SK4003(Q) MOSFET N-CH 600V 3A PW-MOLD 2SK4003(Q), N-channel MOSFET Transistor 3A 600V, 3-Pin PW Mold2 Toshiba	12610	5: ¥4.6512	Single	Through Hole	600 pF V @ 25	-	+150 °C	-	±30 V	-	-	-	-	-	-	-	2.2 Ω	-	-	5.5mm	-	-	600 V	3 A	-	6.5mm	Enhancement	20 W	-	15 nC V @ 10	-	-	-	-	-	1	PW Mold2	3	Power MOSFET	-	-	2.3mm	6.5 x 2.3 x 5.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 TK7A60W,S4VX MOSFET N CH 600V 7A TO-220SIS MOSFET N-Ch 7A 30W FET 600V 490pF 15nC TK7A60W,S4VX Toshiba	10	50: ¥6.5096	Single	Through Hole	490pF @ 300V	TO-220-3 Full Pack	- 55 C	50	30 V	RoHS Compliant	Tube	N-Channel	7A (Ta)	MOSFET N-Channel, Metal Oxide	30 W	600 V	500 mOhms	600V	7 A	15 mm	Through Hole	TO-220SIS	-	-	30W	10 mm	Enhancement	-	3.7V @ 350µA	15nC @ 10V	TK7A60WS4VX	50	30 W	TK7A60W	Toshiba	-	-	-	-	Super Junction	600 mOhm @ 3.5A, 10V	-	-	30 V	-	-	-	1 Channel	Si	-	-	-	-	-	-	-	-	-	-	-	7 ns	15 nC	18 ns	55 ns	40 ns	-	-	-	-	-	-	-	-	-
2 SSM5N15FU(TE85L,F) MOSFET N CH 30V, 100MA USV MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1 Toshiba Semiconductor and Storage	6000	3000: ¥0.5848	Dual	Surface Mount	7.8pF @ 3V	6-TSSOP (5 Lead), SC-88A, SOT-353	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	100mA	MOSFET N-Channel, Metal Oxide	200 mW	30 V	4 Ohms	30V	100 mA	0.9 mm	SMD/SMT	USV	-	-	200mW	2 mm	-	-	1.5 V	-	SSM5N15FU(TE85LF)CT	3000	200 mW	SSM5N15	Toshiba	-	-	-	-	Logic Level Gate	4 Ohm @ 10mA, 4V	-	-	-	-	-	-	2 Channel	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	180 ns	50 ns	-	-	-	-	-	-	-	-	-
3 2SK208-Y(TE85L,F) MOSFET N-CH 50V S-MINI JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	3865	1: ¥0.8261	Single	Surface Mount	8.2pF @ 10V	TO-236-3, SC-59, SOT-23-3	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	6.5 mA	MOSFET N-Channel, Metal Oxide	100 mW	- 5 V	-	50V	6.5 mA	-	SMD/SMT	S-Mini	-	-	100mW	-	-	-	- 30 V	-	2SK208-Y(TE85LF)TR	3000	100 mW	2SK208	Toshiba	-	-	-	-	*	-	-	-	- 30 V	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK880GRTE85LF MOSF N CH 50V 100MW USM JFET N-Ch Junction FET 10mA -50V VGDS JFET N-CH 50V 100MW USM Toshiba Semiconductor and Storage	8224	1: ¥4.216	Single	Surface Mount	13pF @ 10V	SC-70, SOT-323	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	14 mA	N-Channel	100 mW	- 1.5 V	-	-	6.5mA @ 10V	-	SMD/SMT	SC-70	-	-	100mW	-	-	-	- 50 V	-	2SK880GRTE85LFCT	3000	100 mW	2SK880	Toshiba	-	-	-	-	-	-	-	-	-	13 pF	1.5V @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	14 mA	50V
2 2SK879-GR(TE85L,F) JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	240	1: ¥1.554	Single	Surface Mount	8.2pF @ 10V	SC-70, SOT-323	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	6.5 mA	N-Channel	100 mW	- 5 V	-	10 V	2.6mA @ 10V	-	SMD/SMT	USM	-	-	100mW	-	-	-	- 30 V	-	2SK879-GR(TE85LF)TR	3000	100 mW	2SK879	Toshiba	-	-	-	-	-	-	-	-	- 30 V	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK879-Y(TE85L,F) JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	574	1: ¥1.43	Single	Surface Mount	8.2pF @ 10V	SC-70, SOT-323	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	6.5 mA	N-Channel	100 mW	- 5 V	-	10 V	1.2mA @ 10V	-	SMD/SMT	USM	-	-	100mW	-	-	-	400mV @ 100nA	-	2SK879-Y(TE85LF)TR	3000	100 mW	2SK879	Toshiba	-	-	-	-	-	-	-	-	- 30 V	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK3320-BL(TE85L,F JFET DUAL N-CH USV JFET Junction FET N-Ch x2 1.2V to 14mA 10mA Toshiba Semiconductor and Storage	202	1: ¥6.6255	Dual	Surface Mount	13pF @ 10V	6-TSSOP (5 Lead), SC-88A, SOT-353	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	14 mA	N-Channel	200 mW	- 1.5 V	-	10 V	6mA @ 10V	-	SMD/SMT	USV	-	-	200mW	-	-	-	- 30 V	-	2SK3320-BL(TE85LFTR	-	200 mW	2SK3320	Toshiba	-	-	-	-	-	-	-	-	- 30 V	13 pF	200mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCA8006-H(TE12L,Q,M) TPCA8006-H(TE12L,Q,M), N-channel MOSFET Transistor 18A 100V, 8-Pin SOP Advanced Toshiba	9018	5: ¥6.5076	Quad Drain, Single, Triple Source	Surface Mount	780 pF V @ 10	-	+150 °C	-	±20 V	-	-	-	-	-	-	-	0.067 Ω	-	-	0.95mm	-	-	100 V	18 A	-	5mm	Enhancement	45 W	-	12 nC V @ 10	-	-	-	-	-	1	SOP Advanced	8	Power MOSFET	-	-	5mm	5 x 5 x 0.95mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPC8114(TE12L,Q) TPC8114(TE12L,Q), P-channel MOSFET Transistor 18A 30V, 8-Pin SOP Toshiba	7348	5: ¥7.99	Quad Drain, Single, Triple Source	Surface Mount	7480 pF V @ 10	-	+150 °C	-	±20 V	-	-	-	-	-	-	-	0.005 Ω	-	-	1.5mm	-	-	30 V	18 A	-	5mm	Enhancement	1.9 W	-	180 nC V @ 10	-	-	-	-	-	1	SOP	8	Power MOSFET	-	-	4.4mm	5 x 4.4 x 1.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK1120(F) 2SK1120(F), N-channel MOSFET Transistor 8A 1000V, 3-Pin TO-3P W, TO-3PN Toshiba	906	25: ¥42.6835	Single	Through Hole	1300 pF V @ 25	-	+150 °C	-	±20 V	-	-	-	-	-	-	-	1.8 Ω	-	-	19mm	-	-	1000 V	8 A	-	15.9mm	Enhancement	150 W	-	120 nC V @ 10	-	-	-	-	-	1	TO-3P W, TO-3PN	3	Power MOSFET	-	-	4.8mm	15.9 x 4.8 x 19mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-