图片仅供参考,产品以实物为准
| 规格书 |
 2N700(0,2) Datasheet |
| 文档 |
2N7002 View All Specifications |
| Rohs | Lead free / RoHS Compliant |
| 其他相关文件 | 2N7002 View All Specifications |
| 标准包装 | 3,000 |
| FET 型 | MOSFET N-Channel, Metal Oxide |
| FET特点 | Logic Level Gate |
| 漏极至源极电压（VDSS） | 60V |
| 电流-连续漏极（编号）@ 25°C | 200mA |
| Rds（最大）@ ID，VGS | 5 Ohm @ 500mA, 10V |
| VGS（TH）（最大）@ Id | 3V @ 250µA |
| 栅极电荷（Qg）@ VGS | 2nC @ 5V |
| 输入电容（Ciss）@ Vds的 | 43pF @ 25V |
| 功率 - 最大 | 350mW |
| 安装类型 | Surface Mount |
| 包/盒 | TO-236-3, SC-59, SOT-23-3 |
| 供应商器件封装 | SOT-23-3 |
| 包装材料 | Tape & Reel (TR) |
| 最大门源电压 | ±18 |
| 欧盟RoHS指令 | Compliant |
| 最高工作温度 | 150 |
| 通道模式 | Enhancement |
| 标准包装名称 | SOT-23 |
| 最低工作温度 | -55 |
| 渠道类型 | N |
| 封装 | Tape and Reel |
| 最大漏源电阻 | 5000@10V |
| 最大漏源电压 | 60 |
| 每个芯片的元件数 | 1 |
| 供应商封装形式 | SOT-23 |
| 最大功率耗散 | 350 |
| 最大连续漏极电流 | 0.2 |
| 引脚数 | 3 |
| 铅形状 | Gull-wing |
| 单位包 | 3000 |
| 最小起订量 | 18000 |
| FET特点 | Logic Level Gate |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极（Id ） @ 25 °C | 115mA |
| 的Vgs（th ） （最大）@ Id | 3V @ 250µA |
| 漏极至源极电压（Vdss） | 60V |
| 标准包装 | 3,000 |
| 供应商设备封装 | SOT-23-3 |
| 开态Rds（最大）@ Id ，V GS | 5 Ohm @ 500mA, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 350mW |
| 封装/外壳 | TO-236-3, SC-59, SOT-23-3 |
| 输入电容（Ciss ） @ VDS | 43pF @ 25V |
| 其他名称 | 497-3111-2 |
| 闸电荷（Qg ） @ VGS | 2nC @ 5V |
| RoHS指令 | Lead free / RoHS Compliant |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :180mA |
| Drain Source Voltage Vds | :60V |
| On Resistance Rds(on) | :7.5ohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :2.1V |
| 功耗 | :360mW |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :SOT-23 |
| No. of Pins | :3 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Id Max | :200mA |
| Current Temperature | :25°C |
| Device Marking | :ST2N |
| 外部深度 | :2.5mm |
| External Length / Height | :1.12mm |
| 外宽 | :3.05mm |
| Full Power Rating Temperature | :25°C |
| No. of Transistors | :1 |
| 工作温度范围 | :-55°C to +150°C |
| Pulse Current Idm | :800mA |
| SMD Marking | :72 |
| 胶带宽度 | :8mm |
| Voltage Vds Typ | :60V |
| Voltage Vgs Max | :18V |
| Voltage Vgs Rds on Measurement | :10V |
| Voltage Vgs th Max | :3V |
| Weight (kg) | 0.002 |
| Tariff No. | 85412900 |
| Current,Drain | 0.2A |
| GateCharge,Total | 1.4nC |
| PackageType | SOT-23-3L |
| 极化方式 | N-Channel |
| PowerDissipation | 0.35W |
| Resistance,DraintoSourceOn | 1.8Ohms |
| Temperature,Operating,Maximum | +150°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 7ns |
| Time,Turn-OnDelay | 5ns |
| Transconductance,Forward | 0.6S |
| Voltage,Breakdown,DraintoSource | 60V |
| Voltage,Forward,Diode | 1.2V |
| Voltage,GatetoSource | ±18V |
| associated | RE901 D00343 MC33260 120-5. 3209885-M |
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