Toshiba Corporation- 分立半导体

东芝株式会社是一家日本跨国综合企业，总部位于东京港区，由芝浦制作所和东京电气于1939年合并成立，历史可追溯至1875年。核心业务涵盖半导体、存储解决方案、基础设施系统和数字解决方案等领域。在半导体领域，东芝提供分立器件、光电器件、模拟IC和微控制器等丰富产品线。重点产品系列包括光耦TLP系列、功率MOSFET（如SSM和DT系列）以及IGBT模块（如MG系列）。东芝还推出基于ARM的TXZ系列微控制器，用于嵌入式应用，以及面向工业和汽车市场的电机驱动IC。自1986年以来，东芝一直位居全球光电器件和分立半导体供应商第一位，行业地位显著。其技术优势体现在专有半导体工艺和高效功率器件上，如碳化硅（SiC）功率产品。东芝电子器件与存储事业群持续在物联网、汽车和数据中心等领域推动创新。凭借卓越的品质和可靠性传承，东芝成为全球电子制造商值得信赖的合作伙伴。

分立半导体 - 型号列表

共 39 个型号

制造商零件编号	库存	价格	安装类型	配置	输入电容（Ciss）（最大）@ Vds	封装形式	标准包装数量	工作温度	RoHS	包装方式	最大栅源电压 Vgs	晶体管类型	连续漏极电流（Id）@ 25°C	FET类型	额定功率	集电极-发射极饱和电压（最大）@ Vge, Ic	漏源电压（Vdss）	漏极电流（Idss）@ Vds（Vgs=0）	安装样式	供应商器件封装	最大功率	导通电阻（最大）	高度	Vgs(th)（最大）@ Id	击穿电压	峰值脉冲电流（10/1000µs）	其他名称	工厂包装数量	平均正向功率	长度	系列	通道类型	制造商全称	最大功耗	栅极电荷（Qg）（最大）@ Vgs	冷却的封装	FET特性	导通电阻 Rds(on) (最大) @ Id, Vgs	元件数量	位数	卡标准	栅极触发电压 Vgt (最大)	宽度	尺寸/外形	输入电容	截止电压（VGS off）@ Id	引脚数	产品类别	通道数量	技术	SVHC	海关税号	阈值电压	最大额定电流	导通电阻 RDS(On)	触点电压（最大）	重量	端接方式	材料表面处理	上升时间（典型）	电流传输比（最小）	包装数量	下降时间	栅极电荷	首抽头延迟	开关时间（Ton, Toff）（最大）	产品	类型	标准封装名称	欧盟RoHS	引脚样式	输出端	下降时间（典型）	传播延迟（最大）	电流传输比（最大）	正向电压（最大）@ If	传播延迟 tpLH / tpHL（最大）	触点数	峰值脉冲电流（8/20µs）	漏电流（最大）	击穿电压（V(BR)GSS）
TIM6472-45SL TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 125W Trans JFET 15V 20A 3-Pin 2-16G1B toshiba	-		Screw	Single	-	32-16G1B	Trays, Rail / Tube	-65 to 175 °C	-	-	-5 V	-	-	-	-	-	-	-	-	-	-	-	-	-	15 V	20000 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TIM5964-4UL TRANSISTOR,GAAS FET INTERNALLY MATCHED,6GHZ,23W Trans JFET 15V 3.5A 3-Pin 2-11D1B toshiba	-		Screw	Single	-	32-11D1B	Trays	-65 to 175 °C	-	-	-5 V	-	-	-	-	-	-	-	-	-	-	-	-	-	15 V	3500 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCP8103-H(TE8> Trans MOSFET P-CH 40V 4.8A 8-Pin PS T/R toshiba	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SSM3J118TU(TE85L) MOSFET Vds=-30V Id=-1.4A 3Pin MOSF 30V 1.4A UFM MOSFET P-CH 30V 1.4A UFM Toshiba	100	1: ¥3.264	*	Single	137pF @ 15V	3-SMD, Flat Leads	3,000	+ 150 C	Lead free / RoHS Compliant	Tape & Reel (TR)	20 V	P-Channel	1.4A (Ta)	MOSFET P-Channel, Metal Oxide	800 mW	- 30 V	30V	- 1.4 A	SMD/SMT	UFM	800mW	360 mOhms	0.7 mm	-	-	-	SSM3J118TU(TE85L)CT	3000	800 mW	2 mm	SSM3J118	Enhancement	Toshiba	-	-	-	Logic Level Gate, 4V Drive	240 mOhm @ 650mA, 10V	-	-	-	-	-	-	-	-	-	MOSFET	1 Channel	Si	-	-	-	-	-	-	-	-	-	-	1.5 S / 0.8 S	-	-	-	-	-	MOSFET Small Signal	Small Signal	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6K18TU(TE85L,F) MOSFET Vds=20V Id=4A 6Pin MOSFET, N CH, 4A, 20V, SSOTFMLP Toshiba	10	1: ¥1.2172	-	Single	-	ES-6	-	:150°C	RoHS Compliant	Reel	:4V	N-Channel	:4A	-	500 mW	20 V	:20V	4 A	Through Hole	-	-	-	-	-	-	-	-	3000	-	-	-	-	-	:500mW	-	-	-	34 mOhms	-	-	-	-	-	-	-	-	:6	MOSFET	-	-	:No SVHC (20-Jun-2013)	85412900	:1.1V	:4A	:40mohm	:20V	0.0005	:SMD	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 TPC6006-H(TE85L,F) MOSFET MOSFET N-Ch 40V 3.9A MOSFET N-CH 40V 3.9A VS6 2-3T1A TPC6006-H(TE85L,F), N-channel MOSFET Transistor 3.9A 40V, 6-Pin VS MOSFET, N CH, 3.9A, 40V, TSOP6 Toshiba	10	1: ¥1.836	Surface Mount	Quad Drain, Single	251pF @ 10V	SOT-23-6 Thin, TSOT-23-6	3,000	+150 °C	Compliant	Tape & Reel (TR)	±20 V	:N Channel	3.9A (Ta)	MOSFET N-Channel, Metal Oxide	-	-	40V	-	-	VS-6 (2.9x2.8)	-	0.075 Ω	0.7mm	2.3V @ 1mA	40 V	3.9 A	-	-	-	2.9mm	-	Enhancement	-	2.2 W	4.4nC @ 10V	VS	Logic Level Gate	75 mOhm @ 1.9A, 10V	1	6	Power MOSFET	-	1.6mm	2.9 x 1.6 x 0.7mm	-	-	:6	-	-	-	:No SVHC (20-Jun-2013)	85412900	:2.3V	:3.9A	:75mohm	:40V	0.0004	:SMD	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPC8018-H(TE12L,Q) MOSFET PW TR N-Ch 30V 18A 1.9W 3.5mOhms Trans MOSFET N-CH 30V 18A 8-Pin SOP T/R TPC8018-H(TE12L,Q), N-channel MOSFET Transistor, 18A 30V, 8-Pin SOP Toshiba	5267	5: ¥11.1384	Surface Mount	Quad Drain, Single, Triple Source	2265 pF V @ 10	-	-	+150 °C	Compliant	Tape and Reel	±20 V	-	-	-	-	-	-	-	-	-	-	0.005 Ω	1.5mm	-	30 V	18 A	-	-	-	-	-	Enhancement	-	1.9 W	21 nC V @ 5, 38 nC V @ 10	SOP	-	-	1	8	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SOP	-	-	-	-	-	-	SOIC	Compliant	Gull-wing	-	-	-	-	-	-	-	-	-	-
2 TLP832(F) Photointerrupter Transmissive 5mm Phototransistor 4-Pin PWB Photointerrupter Transistor 5mm Gap 4pin Toshiba 通孔安装槽形光电开关 , 晶体管输出, 4针 PWB toshiba	8267	10: ¥7.0992	PCB Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	PWB	-	-	-	-	-	-	-	-	-	-	4	-	-	-	-	-	-	-	-	-	-	-	-	15µs	-	PWB	-	-	-	-	-	-	-	-	-	Infrared LED, Phototransistor	15µs	15µs	100%	1.3V	15µs	4	-	-	-
2SK4103(TE16L1,NQ) MOSFET N-CH 500V 5A PW-MOLD 2SK4103(TE16L1,NQ), N-channel MOSFET Transistor 5A 500V, 3-Pin PW Mold Toshiba	8818	10: ¥6.6572	Surface Mount	Single	-	-	-	+150 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	1.5 Ω	2.3mm	-	500 V	5 A	-	-	-	6.5mm	-	N	-	40 W	16 nC V @ 10	PW Mold	-	-	1	3	Power MOSFET	-	5.5mm	6.5 x 5.5 x 2.3mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 2SK3566(STA4,Q,M) MOSFET N-CH 900V 2.5A TO-220SIS MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm MOSFET, N, 900V, TO-220SIS Toshiba	490	7: ¥2.0237	Through Hole	Single	470pF @ 25V	TO-220-3 Full Pack	50	- 55 C	RoHS Compliant	Tube	:10V	N-Channel	2.5A (Ta)	MOSFET N-Channel, Metal Oxide	40 W	900 V	900V	2.5 A	Through Hole	TO-220SIS	40W	-	-	4V @ 1mA	-	-	-	-	-	-	-	-	-	:40W	12nC @ 10V	-	Standard	6.4 Ohm @ 1.5A, 10V	-	-	-	30 V	-	-	-	-	:3	MOSFET	-	-	:No SVHC (20-Jun-2013)	85412900	:4V	:2.5A	:6.4ohm	:900V	0.0017	:Through Hole	:-	20 ns	2 S	-	30 ns	12 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:7.5A	-	-
2 2SK4003(Q) MOSFET N-CH 600V 3A PW-MOLD 2SK4003(Q), N-channel MOSFET Transistor 3A 600V, 3-Pin PW Mold2 Toshiba	12610	5: ¥4.6512	Through Hole	Single	600 pF V @ 25	-	-	+150 °C	-	-	±30 V	-	-	-	-	-	-	-	-	-	-	2.2 Ω	5.5mm	-	600 V	3 A	-	-	-	6.5mm	-	Enhancement	-	20 W	15 nC V @ 10	PW Mold2	-	-	1	3	Power MOSFET	-	2.3mm	6.5 x 2.3 x 5.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 TK7A60W,S4VX MOSFET N CH 600V 7A TO-220SIS MOSFET N-Ch 7A 30W FET 600V 490pF 15nC TK7A60W,S4VX Toshiba	10	50: ¥6.5096	Through Hole	Single	490pF @ 300V	TO-220-3 Full Pack	50	- 55 C	RoHS Compliant	Tube	30 V	N-Channel	7A (Ta)	MOSFET N-Channel, Metal Oxide	30 W	600 V	600V	7 A	Through Hole	TO-220SIS	30W	500 mOhms	15 mm	3.7V @ 350µA	-	-	TK7A60WS4VX	50	30 W	10 mm	TK7A60W	Enhancement	Toshiba	-	15nC @ 10V	-	Super Junction	600 mOhm @ 3.5A, 10V	-	-	-	30 V	-	-	-	-	-	-	1 Channel	Si	-	-	-	-	-	-	-	-	-	18 ns	-	-	7 ns	15 nC	55 ns	40 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SSM5N15FU(TE85L,F) MOSFET N CH 30V, 100MA USV MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1 Toshiba Semiconductor and Storage	6000	3000: ¥0.5848	Surface Mount	Dual	7.8pF @ 3V	6-TSSOP (5 Lead), SC-88A, SOT-353	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	-	N-Channel	100mA	MOSFET N-Channel, Metal Oxide	200 mW	30 V	30V	100 mA	SMD/SMT	USV	200mW	4 Ohms	0.9 mm	1.5 V	-	-	SSM5N15FU(TE85LF)CT	3000	200 mW	2 mm	SSM5N15	-	Toshiba	-	-	-	Logic Level Gate	4 Ohm @ 10mA, 4V	-	-	-	-	-	-	-	-	-	-	2 Channel	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	180 ns	50 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 2SK208-Y(TE85L,F) MOSFET N-CH 50V S-MINI JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	3749	1: ¥0.9207	Surface Mount	Single	8.2pF @ 10V	TO-236-3, SC-59, SOT-23-3	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	-	N-Channel	6.5 mA	MOSFET N-Channel, Metal Oxide	100 mW	- 5 V	50V	6.5 mA	SMD/SMT	S-Mini	100mW	-	-	- 30 V	-	-	2SK208-Y(TE85LF)TR	3000	100 mW	-	2SK208	-	Toshiba	-	-	-	*	-	-	-	-	- 30 V	-	-	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK880GRTE85LF MOSF N CH 50V 100MW USM JFET N-Ch Junction FET 10mA -50V VGDS JFET N-CH 50V 100MW USM Toshiba Semiconductor and Storage	8224	1: ¥4.216	Surface Mount	Single	13pF @ 10V	SC-70, SOT-323	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	-	N-Channel	14 mA	N-Channel	100 mW	- 1.5 V	-	6.5mA @ 10V	SMD/SMT	SC-70	100mW	-	-	- 50 V	-	-	2SK880GRTE85LFCT	3000	100 mW	-	2SK880	-	Toshiba	-	-	-	-	-	-	-	-	-	-	-	13 pF	1.5V @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	14 mA	50V
2 2SK879-GR(TE85L,F) JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	9132	1: ¥5.168	Surface Mount	Single	8.2pF @ 10V	SC-70, SOT-323	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	-	N-Channel	6.5 mA	N-Channel	100 mW	- 5 V	10 V	2.6mA @ 10V	SMD/SMT	USM	100mW	-	-	- 30 V	-	-	2SK879-GR(TE85LF)TR	3000	100 mW	-	2SK879	-	Toshiba	-	-	-	-	-	-	-	-	- 30 V	-	-	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK879-Y(TE85L,F) JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	10	1: ¥1.2691	Surface Mount	Single	8.2pF @ 10V	SC-70, SOT-323	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	-	N-Channel	6.5 mA	N-Channel	100 mW	- 5 V	10 V	1.2mA @ 10V	SMD/SMT	USM	100mW	-	-	400mV @ 100nA	-	-	2SK879-Y(TE85LF)TR	3000	100 mW	-	2SK879	-	Toshiba	-	-	-	-	-	-	-	-	- 30 V	-	-	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK3320-BL(TE85L,F JFET DUAL N-CH USV JFET Junction FET N-Ch x2 1.2V to 14mA 10mA Toshiba Semiconductor and Storage	167	1: ¥3.3824	Surface Mount	Dual	13pF @ 10V	6-TSSOP (5 Lead), SC-88A, SOT-353	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	-	N-Channel	14 mA	N-Channel	200 mW	- 1.5 V	10 V	6mA @ 10V	SMD/SMT	USV	200mW	-	-	- 30 V	-	-	2SK3320-BL(TE85LFTR	-	200 mW	-	2SK3320	-	Toshiba	-	-	-	-	-	-	-	-	- 30 V	-	-	13 pF	200mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCA8006-H(TE12L,Q,M) TPCA8006-H(TE12L,Q,M), N-channel MOSFET Transistor 18A 100V, 8-Pin SOP Advanced Toshiba	9018	5: ¥6.5076	Surface Mount	Quad Drain, Single, Triple Source	780 pF V @ 10	-	-	+150 °C	-	-	±20 V	-	-	-	-	-	-	-	-	-	-	0.067 Ω	0.95mm	-	100 V	18 A	-	-	-	5mm	-	Enhancement	-	45 W	12 nC V @ 10	SOP Advanced	-	-	1	8	Power MOSFET	-	5mm	5 x 5 x 0.95mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPC8114(TE12L,Q) TPC8114(TE12L,Q), P-channel MOSFET Transistor 18A 30V, 8-Pin SOP Toshiba	7348	5: ¥7.99	Surface Mount	Quad Drain, Single, Triple Source	7480 pF V @ 10	-	-	+150 °C	-	-	±20 V	-	-	-	-	-	-	-	-	-	-	0.005 Ω	1.5mm	-	30 V	18 A	-	-	-	5mm	-	Enhancement	-	1.9 W	180 nC V @ 10	SOP	-	-	1	8	Power MOSFET	-	4.4mm	5 x 4.4 x 1.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-