Infineon Technologies AG- IGBT

英飞凌科技股份公司（Infineon Technologies AG）于1999年5月1日由西门子半导体部门独立并更名成立，总部位于德国慕尼黑。公司是全球领先的半导体解决方案提供商，核心业务涵盖汽车、工业、通信及消费电子领域。主要产品线包括功率器件（如CoolMOS、OptiMOS、CoolSiC、CoolGaN系列）、微控制器（AURIX、TRAVEO、XMC系列）、传感器（磁性传感器、压力传感器、雷达芯片）以及安全芯片（SLE 78、OPTIGA系列）等。英飞凌致力于应对能源效率、出行和安全三大社会核心挑战。公司在全球多个国家拥有制造基地和研发中心，构建了完整的产业链。英飞凌在汽车电子和功率半导体领域居于市场领导地位，是全球最大的汽车半导体供应商之一。其企业口号为'永不停止思考'，彰显持续创新的精神。在中国，英飞凌曾投资成立奇梦达生产内存产品，并与本地代理商广泛合作。凭借先进的工艺技术和系统级方案，英飞凌不断推动智能化和绿色电子系统发展。

IGBT - 型号列表

共 10,638 个型号

制造商零件编号	库存	价格	封装形式	RoHS	包装方式	工作温度	零件号别名	集电极-发射极饱和电压（最大）@ Vge, Ic	晶体管类型	安装样式	标准包装数量	产品类别	漏极电流（Idss）@ Vds（Vgs=0）	配置	栅极触发电压 Vgt (最大)	供应商器件封装	额定功率	工厂包装数量	导通电阻 Rds(on) (最大) @ Id, Vgs	安装类型	系列	最大功率	机械寿命	栅极电荷（Qg）（最大）@ Vgs	首抽头延迟	Vgs(th)（最大）@ Id	连续漏极电流（Id）@ 25°C	频率	FET类型	下降时间	FET特性	上升时间（典型）	漏源电压（Vdss）	输入电容（Ciss）（最大）@ Vds	增益	其他名称	技术	栅极电荷	输出功率	额定输出功率	测试电压	额定电压	输出电流	最小起订量	商标名	单位包装	汽车级	无铅定义	逻辑类型	每端口功率（瓦）	供电电压 (Vcc/Vdd)	匹配码	标准交期	热阻 @ GPM	供电电压	集电极电流（Ic）（最大）	最大栅源电压 Vgs	集电极截止电流（最大）	电流传输比（最小）	最大额定电流	击穿电压	平均正向功率	峰值脉冲电流（10/1000µs）	制造商全称	IGBT类型	输入类型	开关能量	Td（开/关）@ 25°C	反向恢复时间（trr）	集电极脉冲电流 (Icm)	能量	测试条件	直流电阻（DCR）- 初级	标准封装名称	欧盟RoHS	通道数量	元件数量	最大功耗	传播延迟（最大）	导通电阻（最大）	开关时间（Ton, Toff）（最大）	宽度	高度	长度	引脚样式	总长度	包装数量	位数	外壳尺寸-插件	通道类型	印刷电路板数量	过渡频率	噪声系数（dB典型值 @ f）	Vce饱和电压（最大）@ Ib, Ic	直流电流增益 hFE (最小) @ Ic, Vce	类型	Vce饱和电压（最大）
IKU06N60R IGBT Transistors 600V Trenchstop RC Hard SW App, IGBT IGBT 600V 12A 100W TO251-3 Infineon Technologies	1500	1: ¥4.556	TO-251-3 Short Leads, IPak, TO-251AA	RoHS Compliant	Tube	-	IKU06N60RBKMA1 IKU06N60RXK SP000623352	2.1V @ 15V, 6A	-	-	1,500	-	-	-	-	PG-TO251-3	-	-	-	Through Hole	TrenchStop®	100W	End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.	48nC	-	-	-	-	-	-	-	-	-	-	-	-	-	48nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600V	12A	-	18A	-	-	-	-	-	-	Trench	Standard	330µJ	12ns/127ns	68ns	18A	330µJ	400V, 6A, 23 Ohm, 15V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PTFA142401ELV4R250 Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 Infineon Technologies	-		H-33288-2	-	-	+ 150 C	FA142401ELV4R25XT PTFA142401ELV4R250XTMA1	65 V	N-Channel	SMD/SMT	-	Transistors RF MOSFET Power	2 A	Single	12 V	-	625 W	-	-	-	PTFA142401	-	-	-	-	-	-	1.45 GHz to 1.5 GHz	-	-	-	-	-	-	16.5 dB	-	-	-	50 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PTFA211801E V5 Transistors RF MOSFET Power RF LDMOS FETs 180W 2110-2170 MHz FET RF LDMOS 180W H36260-2 Infineon Technologies	10	35: ¥907.8884	H-33288-6	Lead free / RoHS Compliant	Tray	+ 150 C	FA211801EV5XP PTFA211801EV5XWSA1 SP000841128	65 V	N-Channel	SMD/SMT	35	-	1.3 A	Single	10 V	H-36260-2	-	-	-	-	PTFA211801	-	-	-	-	-	-	2170 MHz	-	-	-	-	-	-	17.5 dB	-	-	-	180 W	140W	28V	65V	1.2A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFR3607TR MOSFET AUTO 75V 1 N-CH HEXFET 9mOhms Infineon Technologies AG	-		DPAK	RoHS Compliant	Reel	-	-	75 V	N-Channel	SMD/SMT	-	-	80 A	-	20 V	-	140 W	2000	-	-	-	-	New Product: New from this manufacturer.	-	-	-	-	-	-	-	-	-	-	-	-	-	-	56 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SKB10N60 IGBT Transistors FAST IGBT NPT TECH 600V 10A Infineon Technologies	-		TO-263-3	RoHS Compliant	Reel	+ 150 C	-	-	-	SMD/SMT	-	IGBT Transistors	-	Single	-	-	-	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600 V	21 A	+/- 20 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC889N03LS G MOSFET N-KANAL POWER MOS MOSFET N-CH 30V 45A TDSON-8 Infineon Technologies	5000	5000: ¥2.2656	TDSON-8	RoHS Compliant	Reel	+ 150 C	BSC889N03LSGATMA1 BSC889N03LSGXT SP000475952	30 V	N-Channel	SMD/SMT	5,000	MOSFET	13 A	Single Quad Drain Triple Source	+/- 20 V	PG-TDSON-8	2.5 W	5000	0.009 Ohms	Surface Mount	-	28W	-	16nC @ 10V	13 ns	2.2V @ 250µA	45A	-	MOSFET N-Channel, Metal Oxide	2.4 ns	Logic Level Gate	2.2 ns	30V	1300pF @ 15V	-	BSC889N03LS GCT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD50N06S3-15 MOSFET OPTIMOS-T N-CH 55V 50A 15mOhms Infineon Technologies	2471	1: ¥2.72	TO-252	RoHS Compliant	Reel	+ 175 C	IPD50N06S315XT	55 V	N-Channel	SMD/SMT	-	MOSFET	50 A	Single	+/- 20 V	-	65 W	-	15 m Ohms	-	-	-	Obsolete	-	24 ns	-	-	-	-	67 ns	-	59 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 SPD07N20 G MOSFET N-KANAL POWER MOS MOSFET 200V 400mOhm 7A TO252 MOSFET N-CH 200V 7A TO252 MOSFET N-Ch 200V 7A DPAK-2 Infineon Technologies	2761	1: ¥6.732	TO-252	RoHS Compliant	Reel	+ 175 C	SP000449008 SPD07N20GBTMA1 SPD07N20GXT	200 V	N-Channel	SMD/SMT	2,500	MOSFET	7 A	Single	20 V	PG-TO252-3	40 W	2500	0.4 Ohms	SMD	SPD07N20	40W	-	21nC	-	4V @ 1mA	7A	-	MOSFET N-Channel, Metal Oxide	-	Standard	-	200V	530pF @ 25V	-	SPD07N20 GCT	OptMOS	21 nC	-	-	-	-	-	2500	OptiMOS	2500	NO	RoHS-conform	NO	40W	200V	SPD07N20 G	13 weeks	3.1K/W	-	-	-	-	4.2 S, 3 S	-	-	-	-	-	-	-	-	-	-	-	-	-	4.2 S, 3 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP04CNE8N G MOSFET N-CH 85V 100A 3.9mOhms Infineon Technologies	-		TO-220	RoHS Compliant	Tube	+ 175 C	IPP04CNE8NGXK	85 V	N-Channel	Through Hole	-	MOSFET	100 A	Single	+/- 20 V	-	300 W	-	0.0042 Ohms	-	-	-	Obsolete	-	76 ns	-	-	-	-	25 ns	-	78 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD096N08N3 G MOSFET N-Channel MOSFET 20-200V N-CH 80V 73A 10mOhm TO252-3 MOSFET N-CH 80V 73A TO252-3 Infineon Technologies	2919	1: ¥6.256	TO-252	RoHS Compliant	Reel	+ 175 C	IPD096N08N3GBTMA1 IPD096N08N3GXT SP000474196	80 V	N-Channel	SMD/SMT	2,500	MOSFET	73 A	Single	+/- 20 V	PG-TO252-3	100 W	2500	0.0096 Ohms	SMD	IPD096N08	100W	-	35nC	23 ns	3.5V @ 46µA	73A (Tc)	-	MOSFET N-Channel, Metal Oxide	5 ns	Standard	30 ns	80V	2410pF @ 40V	-	-	OptiMOS	-	-	-	-	-	-	2500	OptiMOS	2500	NO	RoHS-conform	NO	100W	80V	IPD096N08N3 G	14 weeks	1.5K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PTFB211501E V1 R250 Transistors RF MOSFET Power RFP-LDMOS 9 FET RF LDMOS 150W H36248-2 Infineon Technologies	10	250: ¥438.6612	H-36248-2	Lead free / RoHS Compliant	Tape & Reel (TR)	+ 125 C	FB211501EV1R25XT PTFB211501EV1R250XTMA1 SP000707930	65 V	LDMOS	-	250	Transistors RF MOSFET Power	1.2 A	Single	10 V	H-36248-2	-	-	0.08 Ohms	-	PTFB211501	-	-	-	-	-	-	2.17GHz	-	-	-	-	-	-	18dB	-	-	-	-	140W	30V	65V	1.2A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 PTFA192401F V4 Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 IC FET RF LDMOS 240W H-37260-2 Infineon Technologies	10	40: ¥941.5144	H-37260-2	Lead free / RoHS Compliant	Tray	+ 150 C	FA192401FV4XP PTFA192401FV4XWSA1 SP000457842	65 V	N-Channel	SMD/SMT	40	Transistors RF MOSFET Power	1.6 A	Single	12 V	H-37260-2	761 W	40	0.03 Ohms at 10 V (Typ)	-	PTFA192401	-	-	-	-	-	-	1.93 GHz to 1.99 GHz	-	-	-	-	-	-	16 dB	-	-	-	240 W	50W	30V	65V	1.6A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 IPB019N06L3 G MOSFET OptiMOS3 PWRTrnsistr LOGIC LEVEL N-CH N-CH 60V 120A 2mOhm TO263-3 MOSFET N-CH 60V 120A TO263-3 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 Infineon Technologies	864	1: ¥21.148	TO-263	RoHS Compliant	Reel	+ 175 C	IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020	60 V	N-Channel	-	1,000	MOSFET	120 A	Single	+/- 20 V	PG-TO263-2	250000 mW	1000	1.9 mOhms	SMD	IPB019N06	250W	-	166nC	131 ns	2.2V @ 196µA	120A	-	MOSFET N-Channel, Metal Oxide	-	Logic Level Gate	-	60V	28000pF @ 30V	-	IPB019N06L3 GCT	OptiMOS 3	-	-	-	-	-	-	1000	OptiMOS	1000	NO	RoHS-conform	YES	250W	60V	IPB019N06L3 G	14 weeks	0.6K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUZ73A MOSFET N-CH 200V 5.5A MOSFET N-CH 200V 5.5A TO-220AB Infineon Technologies	100	1: ¥3.672	TO-220AB	RoHS Compliant	Tube	+ 150 C	BUZ73AXK	200 V	N-Channel	Through Hole	500	MOSFET	5.5 A	Single	+/- 20 V	PG-TO220-3	40 W	50	0.6 Ohms	Through Hole	-	40W	Obsolete	-	55 ns	4V @ 1mA	5.5A (Tc)	-	MOSFET N-Channel, Metal Oxide	30 ns	Standard	40 ns	200V	530pF @ 25V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC020N03LSGATMA1 Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 infineon technologies	1667	1: ¥8.568	8TDSON EP	RoHS Compliant	Reel	-55 to 150 °C	-	30 V	N-Channel	SMD/SMT	Tape & Reel	-	-	1 N-Channel	-	-	-	5000	2@10V mOhm	Surface Mount	-	-	-	-	42 ns	1 V	100 A	-	-	7 ns	-	7 ns	-	-	-	-	Si	93 nC	-	-	-	-	-	-	OptiMOS	-	-	-	-	-	-	-	-	-	-	-	±20 V	-	65 S	-	30 V	96 W	28 A	Infineon Technologies	-	-	-	-	-	-	-	-	-	SON	Compliant	1 Channel	1	2500	7 ns	1.7 mOhms	11 ns	5.15 mm	1.27 mm	5.9 mm	No Lead	5.15	TDSON EP	8	1	Enhancement	8	-	-	-	-	-	-
2 BFS 17W H6327 Transistors RF Bipolar Power RF BIP TRANSISTOR TRANS RF NPN 15V 25MA SOT323 Transistors RF Bipolar RF BIP TRANSISTOR RF Bipolar Transistors RF BIP TRANSISTOR Infineon Technologies	11896	1: ¥2.788	SC-70, SOT-323	RoHS Compliant	Reel	- 65 C	BFS17WH6327XT BFS17WH6327XTSA1 SP000750450	-	NPN	SMD/SMT	3,000	Transistors RF Bipolar Power	-	-	-	PG-SOT323-3	-	3000	-	Surface Mount	BFS17	280mW	-	-	-	-	-	1 GHz	-	-	-	-	-	-	-	BFS 17W H6327CT	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	15V	25mA	-	25 mA	-	-	-	280 mW	-	Infineon Technologies	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.4GHz	3.5dB ~ 5dB @ 800MHz	2.5 V	40 @ 2mA, 1V	RF Bipolar Power	-
BF998E6327XT Trans MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R Trans MOSFET N-CH 12V 0.03A 4-Pin (3+Tab) SOT-143 T/R infineon technologies	-		4SOT-143	-	-	-55 to 150 °C	-	-	-	-	Tape & Reel	-	-	-	-	-	-	-	-	Surface Mount	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	±8 V	-	-	-	12 V	-	0.03 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FZ300R12KE3GS IGBT Transistors 1200V 300A SINGLE Infineon Technologies	-		IS5a ( 62 mm )	No	-	-	-	-	-	Screw	-	IGBT Transistors	-	-	-	-	1450 W	10	-	-	-	-	Obsolete	400 nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.7 V
2 PTFA210601E V4 Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 IC FET RF LDMOS 60W H-36265-2 Infineon Technologies	-		H-36265-2	RoHS Compliant	Tray	+ 150 C	FA210601EV4XP	65 V	N-Channel	SMD/SMT	50	Transistors RF MOSFET Power	550 mA	Single	12 V	H-36265-2	196 W	50	-	-	-	-	Obsolete	-	-	-	-	2170 MHz	-	-	-	-	-	-	16 dB	SP000376074	-	-	60 W	12W	28V	65V	550mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	10µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 IPP80N06S4L-05 MOSFET N-Channel 60V MOSFET MOSFET 60V 4.8mOHM AECQ TO220 MOSFET N-CH 60V 80A TO220-3 Infineon OptiMOS T2 系列 Si N沟道 MOSFET , 80 A, Vds=60 V, 3针 TO-220封装 MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 Infineon Technologies	708	1: ¥10.54	TO220-3	RoHS Compliant	Tube	-	IPP80N06S4L05AKSA1 IPP80N06S4L05AKSA2 SP000415708	-	-	-	500	-	80A	-	-	PG-TO220-3	-	-	0.0085Ohm	THT	IPP80N06S4L	107W	-	83nC	-	2.2V @ 60µA	80A (Tc)	-	MOSFET N-Channel, Metal Oxide	-	Logic Level Gate	-	60V	8180pF @ 25V	-	-	-	-	-	-	-	-	-	500	-	500	AEC-Q(100)	RoHS-conform	YES	107W	60V	IPP80N06S4L-05	17 weeks	1.4K/W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-