| CIL21NR27JNE |
samsung electro-mechanics |
CHIP INDUCTOR WITH MONOLITHIC STRUCTURE FOR HIGH RELIABILITY |
| CIL21NR27KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 270nH 10% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R |
| CIL21NR10KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 100nH 10% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R |
| CIL21NR22KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 220nH 10% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R |
| CIL21NR39KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 390nH 10% 25MHz 25Q-Factor Ferrite 200mA 0805 Embossed T/R |
| CIL21NR47KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 470nH 10% 25MHz 25Q-Factor Ferrite 200mA 0805 Embossed T/R |
| CIL21NR56KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 560nH 10% 25MHz 25Q-Factor Ferrite 150mA 0805 Embossed T/R |
| CIL21NR82KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 820nH 10% 25MHz 25Q-Factor Ferrite 150mA 0805 Embossed T/R |
| CIL21J1R0KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 1uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R |
| CIL21J1R2KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 1.2uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R |
| CIL21J1R5KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 1.5uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R |
| CIL21J1R8KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 1.8uH 10% 10MHz 45Q-Factor Ferrite 50mA 0805 Embossed T/R |
| CIL21J2R2KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 2.2uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R |
| CIL21J2R7KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 2.7uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R |
| CIL21J3R3KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 3.3uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R |
| CIL21J3R9KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 3.9uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R |
| CIL21J4R7KNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 4.7uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R |
| CIL21N47NKNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 47nH 10% 50MHz 15Q-Factor Ferrite 300mA 0805 Embossed T/R |
| CIL21N47NMNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 47nH 20% 50MHz 15Q-Factor Ferrite 300mA 0805 Embossed T/R |
| CIL21N68NMNE |
samsung electro-mechanics |
Ind Chip Shielded Multi-Layer 68nH 20% 50MHz 15Q-Factor Ferrite 300mA 0805 Embossed T/R |
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