规格书 |
SQM200N04-1M1L-GE3 |
单位包 | 800 |
最小起订量 | 800 |
FET特点 | Logic Level Gate |
封装 | Tape & Reel (TR) |
安装类型 | Surface Mount |
电流 - 连续漏极(Id ) @ 25 °C | 200A (Tc) |
的Vgs(th ) (最大)@ Id | 2.5V @ 250µA |
漏极至源极电压(Vdss) | 40V |
标准包装 | 800 |
供应商设备封装 | TO-263-7 |
开态Rds(最大)@ Id ,V GS | 1.1 mOhm @ 30A, 10V |
FET型 | MOSFET N-Channel, Metal Oxide |
功率 - 最大 | 375W |
封装/外壳 | TO-263-7, D²Pak (6 Leads + Tab) |
输入电容(Ciss ) @ VDS | 20655pF @ 25V |
闸电荷(Qg ) @ VGS | 413nC @ 10V |
RoHS指令 | Lead free / RoHS Compliant |
安装风格 | SMD/SMT |
产品种类 | MOSFET |
晶体管极性 | N-Channel |
连续漏极电流 | 200 A |
正向跨导 - 闵 | 219 S |
RDS(ON) | 1.1 mOhms |
功率耗散 | 375 W |
下降时间 | 189 ns |
商品名 | TrenchFET |
典型关闭延迟时间 | 665 ns |
上升时间 | 18 ns |
漏源击穿电压 | 40 V |
RoHS | RoHS Compliant By Exemption |
栅极电荷Qg | 413 nC |
Continuous Drain Current Id | :200A |
Drain Source Voltage Vds | :40V |
On Resistance Rds(on) | :0.0008ohm |
Rds(on) Test Voltage Vgs | :10V |
Threshold Voltage Vgs | :2V |
功耗 | :375W |
Operating Temperature Min | :-55°C |
Operating Temperature Max | :175°C |
Transistor Case Style | :TO-263 |
No. of Pins | :7 |
MSL | :MSL 1 - Unlimited |
Weight (kg) | 0.0001 |
Tariff No. | 85412900 |
电流 - 连续漏极(Id ) @ 25 °C | 200A (Tc) |
SQM200N04-1m1L-GE3也可以通过以下分类找到
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