Toshiba Corporation- MOSFET模块

东芝株式会社是一家日本跨国综合企业，总部位于东京港区，由芝浦制作所和东京电气于1939年合并成立，历史可追溯至1875年。核心业务涵盖半导体、存储解决方案、基础设施系统和数字解决方案等领域。在半导体领域，东芝提供分立器件、光电器件、模拟IC和微控制器等丰富产品线。重点产品系列包括光耦TLP系列、功率MOSFET（如SSM和DT系列）以及IGBT模块（如MG系列）。东芝还推出基于ARM的TXZ系列微控制器，用于嵌入式应用，以及面向工业和汽车市场的电机驱动IC。自1986年以来，东芝一直位居全球光电器件和分立半导体供应商第一位，行业地位显著。其技术优势体现在专有半导体工艺和高效功率器件上，如碳化硅（SiC）功率产品。东芝电子器件与存储事业群持续在物联网、汽车和数据中心等领域推动创新。凭借卓越的品质和可靠性传承，东芝成为全球电子制造商值得信赖的合作伙伴。

MOSFET模块 - 型号列表

共 87 个型号

制造商零件编号	库存	价格	包装方式	安装类型	封装形式	供应商器件封装	工作温度	FET特性	Vgs(th)（最大）@ Id	导通电阻 Rds(on) (最大) @ Id, Vgs	漏源电压（Vdss）	输入电容（Ciss）（最大）@ Vds	连续漏极电流（Id）@ 25°C	系列	技术	零件状态	栅极电荷（Qg）（最大）@ Vgs	资质认证	等级	FET类型	最大栅源电压 Vgs	最大功耗	驱动电压（最大Rds On，最小Rds On）	制造商	基础产品编号	最大功率	制造商全称	配置	标准包装数量	RoHS	产品类别	输出类型	输出电流	输出数量	开关频率	同步整流	最小输入电压	类型	其他名称	工厂包装数量	下降时间	栅极电荷	额定功率	上升时间（典型）	晶体管类型	首抽头延迟	通道数量	平均正向功率	集电极-发射极饱和电压（最大）@ Vge, Ic	导通电阻（最大）	开关时间（Ton, Toff）（最大）	栅极触发电压 Vgt (最大)	漏极电流（Idss）@ Vds（Vgs=0）	高度	长度	安装样式	通道类型
TB7106F(T2LPP1,Q) X35 PB-F POWER MOSFET TRANSISTOR SOP-8-ADV MOQ=3000 PD=45W F X35 PB-F POWER MOSFET TRANSIST IC REG BUCK SYNC ADJ 3A 8SOP-ADV Voltage Regulators - Switching Regulators DC DC Converter IC 4.5 to 20V 0.18Ohm toshiba	10	3000: ¥5.0932	Tape & Reel (TR)	Surface Mount	8-PowerVDFN	8-SOP Advance	-40°C ~ 125°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3,000	RoHS Compliant	Voltage Regulators - Switching Regulators	Adjustable	3A	1	380kHz	Yes	0.8 V ~ 18 V	Step-Down (Buck)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 TK5A60W,S4VX DTMOSIV_600V_900MOHM MAX(VGS=1 MOSFET N CH 600V 5.4A TO-220SIS MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC TK5A60W,S4VX MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC Toshiba	117	1: ¥14.28	Tube	Through Hole	TO-220-3 Full Pack	TO-220SIS	- 55 C	Super Junction	3.7V @ 270µA	900 mOhm @ 2.7A, 10V	600V	380pF @ 300V	5.4A (Ta)	TK5A60W	Si	-	10.5nC @ 10V	-	-	MOSFET N-Channel, Metal Oxide	30 V	-	-	-	-	30W	Toshiba	Single	50	RoHS Compliant	-	-	-	-	-	-	-	-	TK5A60WS4VX	50	7 ns	10.5 nC	30 W	18 ns	N-Channel	50 ns	1 Channel	30 W	600 V	770 mOhms	40 ns	30 V	5.4 A	15 mm	10 mm	Through Hole	Enhancement
SSM6K809R,LXHF . SSM6K809R,LXHF - N-Channel 60 V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	2292	3000: ¥1.9481	Tape & Reel (TR)	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	-	2.5V @ 100µA	36mOhm @ 5A, 10V	60 V	550 pF @ 10 V	6A (Ta)	-	MOSFET (Metal Oxide)	Active	9.3 nC @ 10 V	AEC-Q101	Automotive	N-Channel	±20V	1.5W (Ta)	4V, 10V	Toshiba Semiconductor and Storage	SSM6K809	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6K810R,LXHF . SSM6K810R,LXHF - N-Channel 100 V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	4615	3000: ¥1.9481	Tape & Reel (TR)	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	-	2.5V @ 100µA	69mOhm @ 2A, 10V	100 V	430 pF @ 15 V	3.5A (Ta)	-	MOSFET (Metal Oxide)	Active	3.2 nC @ 4.5 V	AEC-Q101	Automotive	N-Channel	±20V	1.5W (Ta)	4.5V, 10V	Toshiba Semiconductor and Storage	SSM6K810	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6N813R,LXHF . SSM6N813R,LXHF - Mosfet Array 100V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	50	1: ¥3.3488	Tape & Reel (TR)	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	Logic Level Gate, 4.5V Drive	2.5V @ 100µA	112mOhm @ 3.5A, 10V	100V	242pF @ 15V	3.5A (Ta)	-	MOSFET (Metal Oxide)	Active	3.6nC @ 4.5V	AEC-Q101	Automotive	-	-	-	-	-	SSM6N813	1.5W (Ta)	Toshiba Semiconductor and Storage	2 N-Channel (Dual)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK090Z65Z,S1F . TK090Z65Z,S1F - N-Channel 650 V 30A (Ta) 230W (Tc) Through Hole TO-247-4L(T) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tube	Through Hole	TO-247-4	TO-247-4L(T)	150°C	-	4V @ 1.27mA	90mOhm @ 15A, 10V	650 V	2780 pF @ 300 V	30A (Ta)	DTMOSVI	MOSFET (Metal Oxide)	Active	47 nC @ 10 V	-	-	N-Channel	±30V	230W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM5N16FU,LF . SSM5N16FU,LF - Mosfet Array 20V 100mA (Ta) 200mW (Ta) Surface Mount USV from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV	150°C	-	1.1V @ 100µA	3Ohm @ 10mA, 4V	20V	9.3pF @ 3V	100mA (Ta)	-	MOSFET (Metal Oxide)	Active	-	-	-	-	-	-	-	-	SSM5N16	200mW (Ta)	Toshiba Semiconductor and Storage	2 N-Channel (Dual)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K16FS,LF . SSM3K16FS,LF - N-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount SSM from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	SC-75, SOT-416	SSM	150°C	-	1.1V @ 100µA	3Ohm @ 10mA, 4V	20 V	9.3 pF @ 3 V	100mA (Ta)	-	MOSFET (Metal Oxide)	Active	-	-	-	N-Channel	±10V	100mW (Ta)	1.5V, 4V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK065Z65Z,S1F . TK065Z65Z,S1F - N-Channel 650 V 38A (Ta) 270W (Tc) Through Hole TO-247-4L(T) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	25	1: ¥79.764	Tube	Through Hole	TO-247-4	TO-247-4L(T)	150°C	-	4V @ 1.69mA	65mOhm @ 19A, 10V	650 V	3650 pF @ 300 V	38A (Ta)	DTMOSVI	MOSFET (Metal Oxide)	Active	62 nC @ 10 V	-	-	N-Channel	±30V	270W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK3A90E,S4X . TK3A90E,S4X - N-Channel 900 V 2.5A (Ta) 35W (Tc) Through Hole TO-220SIS from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tube	Through Hole	TO-220-3 Full Pack	TO-220SIS	150°C	-	4V @ 250µA	4.6Ohm @ 1.3A, 10V	900 V	650 pF @ 25 V	2.5A (Ta)	-	MOSFET (Metal Oxide)	Active	15 nC @ 10 V	-	-	N-Channel	±30V	35W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K72KFS,LXHF . SSM3K72KFS,LXHF - N-Channel 60 V 300mA (Ta) 150mW (Ta) Surface Mount SSM from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	SC-75, SOT-416	SSM	150°C	-	2.1V @ 250µA	1.5Ohm @ 100mA, 10V	60 V	40 pF @ 10 V	300mA (Ta)	U-MOSVII-H	MOSFET (Metal Oxide)	Active	0.6 nC @ 4.5 V	AEC-Q101	Automotive	N-Channel	±20V	150mW (Ta)	4.5V, 10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6K809R,LF . SSM6K809R,LF - N-Channel 60 V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	3098	3000: ¥1.4517	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	-	2.5V @ 100µA	36mOhm @ 5A, 10V	60 V	550 pF @ 10 V	6A (Ta)	U-MOSVIII-H	MOSFET (Metal Oxide)	Active	9.3 nC @ 10 V	-	-	N-Channel	±20V	1.5W (Ta)	4V, 10V	Toshiba Semiconductor and Storage	SSM6K809	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCP8407,LF . TPCP8407,LF - Mosfet Array 40V 5A (Ta), 4A (Ta) 690mW (Ta) Surface Mount PS-8 from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	36	1: ¥11.991	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-SMD, Flat Leads	PS-8	150°C	-	3V @ 1mA	36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V	40V	505pF @ 10V, 810pF @ 10V	5A (Ta), 4A (Ta)	-	MOSFET (Metal Oxide)	Active	11.8nC @ 10V, 18nC @ 10V	AEC-Q101	Automotive	-	-	-	-	-	TPCP8407	690mW (Ta)	Toshiba Semiconductor and Storage	N and P-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK4P60D,RQ . TK4P60D,RQ - N-Channel 600 V 4A (Ta) 100W (Tc) Surface Mount DPAK from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	150°C	-	4.4V @ 1mA	1.7Ohm @ 2A, 10V	600 V	600 pF @ 25 V	4A (Ta)	-	MOSFET (Metal Oxide)	Active	12 nC @ 10 V	-	-	N-Channel	±30V	100W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK12A50W,S5X . TK12A50W,S5X - N-Channel 500 V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	10	1: ¥25.676	Tube	Through Hole	TO-220-3 Full Pack	TO-220SIS	150°C	-	3.7V @ 600µA	300mOhm @ 5.8A, 10V	500 V	890 pF @ 300 V	11.5A (Ta)	DTMOSIV	MOSFET (Metal Oxide)	Active	25 nC @ 10 V	-	-	N-Channel	±30V	35W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPN1200APL,L1Q . TPN1200APL,L1Q - N-Channel 100 V 40A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	48	1: ¥10.6575	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-PowerVDFN	8-TSON Advance (3.1x3.1)	175°C	-	2.5V @ 300µA	11.5mOhm @ 20A, 10V	100 V	1855 pF @ 50 V	40A (Tc)	U-MOSIX-H	MOSFET (Metal Oxide)	Active	24 nC @ 10 V	-	-	N-Channel	±20V	630mW (Ta), 104W (Tc)	4.5V, 10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPH9R00CQH,LQ . TPH9R00CQH,LQ - N-Channel 150 V 64A (Tc) 960mW (Ta), 210W (Tc) Surface Mount 8-SOP Advance (5x5) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	10	1: ¥35.7105	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-PowerVDFN	8-SOP Advance (5x5)	175°C	-	4.3V @ 1mA	9mOhm @ 32A, 10V	150 V	5400 pF @ 75 V	64A (Tc)	-	MOSFET (Metal Oxide)	Active	44 nC @ 10 V	-	-	N-Channel	±20V	960mW (Ta), 210W (Tc)	8V, 10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPW2R508NH,L1Q . TPW2R508NH,L1Q - N-Channel 75 V 150A (Ta) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-PowerVDFN	8-DSOP Advance	150°C	-	4V @ 1mA	2.5mOhm @ 50A, 10V	75 V	6000 pF @ 37.5 V	150A (Ta)	U-MOSVIII-H	MOSFET (Metal Oxide)	Active	72 nC @ 10 V	-	-	N-Channel	±20V	800mW (Ta), 142W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK155E65Z,S1X . TK155E65Z,S1X - N-Channel 650 V 18A (Ta) 150W (Tc) Through Hole TO-220 from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	344	1: ¥31.688	Tube	Through Hole	TO-220-3	TO-220	150°C	-	4V @ 730µA	155mOhm @ 9A, 10V	650 V	1635 pF @ 300 V	18A (Ta)	-	MOSFET (Metal Oxide)	Active	29 nC @ 10 V	-	-	N-Channel	±30V	150W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J15CT,L3F . SSM3J15CT,L3F - P-Channel 30 V 100mA (Ta) 100mW (Ta) Surface Mount CST3 from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	SC-101, SOT-883	CST3	150°C	-	1.7V @ 100µA	12Ohm @ 10mA, 4V	30 V	9.1 pF @ 3 V	100mA (Ta)	-	MOSFET (Metal Oxide)	Active	-	-	-	P-Channel	±20V	100mW (Ta)	2.5V, 4V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Toshiba Corporation- MOSFET模块

MOSFET模块 - 型号列表

输入电容（Ciss）（最大）@ Vds

导通电阻 Rds(on) (最大) @ Id, Vgs

Vgs(th)（最大）@ Id

栅极电荷（Qg）（最大）@ Vgs

连续漏极电流（Id）@ 25°C

漏源电压（Vdss）

供应商器件封装

最大功耗

封装形式

系列

驱动电压（最大Rds On，最小Rds On）

基础产品编号

工作温度

最大栅源电压 Vgs

最大功率

包装方式

FET类型

配置

标准包装数量

安装类型

FET特性

技术

制造商全称