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通用集成电路（其他）
NTE Electronics, Inc.- 通用集成电路（其他）
通用集成电路（其他） - 型号列表
共 7 个型号| 制造商零件编号 | 库存 | 价格 | 供电电压 | 接口 | 存取时间 | 电容 | 存储器类型 | 漏电流 | 输入电容值 | 额定电流 - AC | 最小输入电压 | 冷却的封装 | 密度 | 制造商全称 | 工作温度 | 结工作温度 | 上升时间（典型） | 上升/下降时间（典型） | 输出电流 | 输入逻辑高电平 | 可编程性 | 海关税号 | 重量 | 引脚数 | 封装形式 | 额定功率 | 存储器 | 存储器容量 | VCCB电压 | 端接方式 | 材料表面处理 | 负载电流 | 标准包装规格 | 导通电阻（最大） | 多路复用/解复用电路 | 风扇类型 | 电路数 | 逻辑类型 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 EPROM; 28-Lead DIP; 2 us (Min.)Setup Time EPROM UV 64K-Bit 8K x 8 250ns 28-Pin PDIP INTEGRATED CIRCUIT 64K EPROM NMOS 200NS28-LEAD DIP UV ERASABLE NTE Electronics | 13 | 1: ¥157.08 | -0.6 to 6 V | Wire | 250 ns | 12 pF | UV EPROM | 10 μA | 6 pF | 150 mA | 6 V | DIP | 64K | 8K×8 | -10 to +80 °C | - | 20 ns | 20 ns | - | - | - | - | - | - | - | 788 mW | - | - | - | - | - | - | - | - | - | - | - | - |
 EPROM; 16K NMOS UV Erasable; 350 ns; 5.25 V (Max.); 5.25 V (Max.); 20 ns; DIP EPROM UV 16K-Bit 2K x 8 350ns 24-Pin DIP IC, UV EPROM, 16K INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE NTE Electronics | 10 | 1: ¥134.504 | :4.75V | Bus | :350ns | 8 pF | :EPROM - UV | 10 μA | 4 pF | 100 mA | 6 V | DIP | 16K | 2K×8 | :0°C | 70 °C | 20 ns | 20 ns | 100 mA (Max.) (Active) | 2.0 V (Min.) | 5.25 V (Max.) | 85423255 | 0.003333 | :24 | :DIP | - | :2K x 8bit | :16Kbit | :5V | :Through Hole | :- | - | - | - | - | - | - | - |
 EPROM; 32 K NMOS UV; 200 ns (Max.); to -0.6 V; 5 V + 5%; lt lt=== 20 ns; 10 muA EPROM UV 32K-Bit 4K x 8 200ns 24-Pin PDIP INTEGRATED CIRCUIT EPROM 32K NMOS 200NS24-LEAD DIP UV ERASABLE NTE Electronics | 32 | 1: ¥160.752 | 5 V | Bus | 200 ns | 8 pF | UV EPROM | 10 μA | 4 pF | 70 mA | 6 V | DIP | 32K | 4K×8 | 0 to +70 °C | 70 °C | ≤20 ns | ≤20 ns | 70 mA (Typ.) (Active) | 2.0 V (Min.) | +22 to -0.6 V | - | - | - | - | - | - | - | - | - | - | 10 μA | - | - | - | - | - | - |
 EPROM; 256 Kbit EPROM; 45 ns; 100 mus; 12.75 + 0.25 V; -2 to V; 30 mA (Max.) EPROM UV 256K-Bit 32K x 8 150ns 28-Pin DIP EPROM 256KB(32K X 8)150NS NTE Electronics | 25 | 1: ¥79.696 | -2 to 7 V | Bus | 45 ns | 12 pF | EPROM | ±10 μA | 6 pF | 30 mA (Read), 50 mA (Programming) | 6 V (Read), 6.75 V (Programming) | DIP | 256K | 32K×8 | -40 to +125 °C | 125 °C | - | - | 30 mA | 2 V (Min.) | 100 μs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
 | 10 | 1: ¥14.688 | :3V to 18V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 85423990 | 0.003 | :16 | :DIP | - | - | - | - | - | - | - | 1 | :1.05kohm | :(Not Available) | :4000 | :1 | - |
 SRAM Chip Async Single 5V 1K-Bit 256 x 4-Bit 450ns 22-Pin PDIP IC - NMOS 1K SRAM 450NS 22 LEAD DIP NTE Electronics | 10 | 1: ¥113.288 | -0.5 to 7 V | Parallel Bus | 450 ns | 8 pF | SRAM | ±1 μA | 4 pF | 9 mA | 2.2 V (Min) (High), 0.65 V (Max.) (Low) | DIP | 1024 | 256×4 | -40 to +85 °C | +85 °C | 20 ns | 20 ns | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | CMOS |
 | 90 | 1: ¥86.768 | -2 to 7 V | Bus | 100 ns | 12 pF | UV EPROM | ±10 μA | 6 pF | 30 mA | 6 V (Read), 6.5 V (Programming) | DIP | 64K | 8K×8 | -40 to +125 °C | 125 °C | - | - | 30 mA | 2 V | 12.5 ± 0.25 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |