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  3. RF晶体管（BJT）
  4. NESG2021M05-A

图片仅供参考,产品以实物为准

厂商型号

NESG2021M05-A 

产品描述

Transistors RF Silicon Germanium NPN SiGe High Freq

内部编号

440-NESG2021M05-A

生产厂商

CEL

CEL

#1

 数量:349
1+¥46.797
10+¥22.871
100+¥11.727
最小起订量:1
马来西亚吉隆坡
当天发货，5-8个工作日送达.
立即询价

#2

 数量:349
1+¥46.797
10+¥22.871
100+¥11.727
最小起订量:1
马来西亚吉隆坡
当天发货，5-8个工作日送达.
立即询价

订购说明

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NESG2021M05-A产品详细规格

规格书 NESG2021M05-A datasheet 规格书
NESG2021M05-A datasheet 规格书
标准包装 1
晶体管类型 NPN
电压 - 集电极发射极击穿（最大） 5V
频率转换 25GHz
噪声系数 (dB Typ @ f) 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
增益 10dB ~ 18dB
功率 - 最大 175mW
直流电流增益（HFE）（最小值）@ IC，VCE 130 @ 5mA, 2V
集电极电流（Ic）（最大） 35mA
安装类型 Surface Mount
包/盒 SOT-343F
供应商器件封装 M05
包装材料 Bulk
动态目录 NPN RF Transistors###/catalog/en/partgroup/npn-rf-transistors/17062?mpart=NESG2021M05-A&vendor=51&WT.z_ref_page_type=Part%20Search&WT.z_ref_page_sub_type=Part%20Detail%20Page&WT.z_ref_page_id=0
发射极 - 基极电压VEBO 1.5 V
产品种类 Transistors RF Bipolar
晶体管极性 NPN
类型 RF Silicon Germanium
安装风格 SMD/SMT
功率耗散 175 mW
最低工作温度 - 65 C
封装/外壳 SOT-343
配置 Single
最高工作温度 + 150 C
RoHS RoHS Compliant
连续集电极电流 35 mA

NESG2021M05-A系列产品

型号厂家产品描述
NESG2021M05 California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 4-Pin Thin-Type Super Mini-Mold
NESG2021M05 CEL Transistors RF Silicon Germanium RO 551-NESG2021M05-A
NESG2021M05-EVNF58 CEL Transistors RF Silicon Germanium For NESG2021M05-A Noise Fig at 5.8 GHz
NESG2021M05-T1 California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R
NESG2021M05-T1-A California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R
NESG2021M05-T1-A CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2021M16 California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold
NESG2021M16 CEL Transistors RF Silicon Germanium RO 551-NESG2021M16-A
NESG2021M16-A California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold
NESG2021M16-A CEL Transistors RF Silicon Germanium NPN High Frequency
NESG2021M16-T3 California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold T/R
NESG2021M16-T3-A California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold T/R
NESG2021M16-T3-A CEL Transistors RF Silicon Germanium NPN High Frequency
NESG2030M04 California Eastern Laboratories Trans GP BJT NPN 2.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R
NESG2030M04 CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2030M04-A California Eastern Laboratories Trans GP BJT NPN 2.3V 0.035A 4-Pin Thin-Type Super Mini-Mold
NESG2030M04-A CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2030M04-EVNF16 CEL Transistors RF Silicon Germanium For NESG2030M04 1.6G
NESG2030M04-T2 California Eastern Laboratories Trans GP BJT NPN 2.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R
NESG2030M04-T2-A California Eastern Laboratories Trans GP BJT NPN 2.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R
NESG2030M04-T2-A CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2030M16 CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2030M16-A NEC/CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2030M16-T3-A NEC/CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2031M05 NEC/CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2031M05-A California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 4-Pin Thin-Type Super Mini-Mold
NESG2031M05-A CEL Transistors RF Silicon Germanium NPN SiGe High Freq
NESG2031M05-EVNF58 CEL Transistors RF Silicon Germanium For NESF2031M05-A Noise Fig at 5.8 GHz
NESG2031M05-T1 California Eastern Laboratories Trans GP BJT NPN 5V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R

NESG2021M05-A也可以通过以下分类找到

  1. 产品分类
  2. 半导体与光电子
  3. 射频半导体
  4. 晶体管射频
  5. 射频双极

NESG2021M05-A相关搜索

  1. NESG
  2. NESG2021
  3. NESG2021M
  4. NESG2021M05
  5. NESG2021M05-A
订购NESG2021M05-A.产品描述:Transistors RF Silicon Germanium NPN SiGe High Freq. 生产商: CEL.芯天下有低价

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