规格书 |
RJK60S7DPK-M0 |
文档 |
Multiple Devices 16/Aug/2013 Multiple Devices 01/Jul/2013 |
标准包装 | 100 |
FET 型 | MOSFET N-Channel, Metal Oxide |
FET特点 | Super Junction |
漏极至源极电压(VDSS) | 600V |
电流-连续漏极(编号)@ 25°C | 30A |
Rds(最大)@ ID,VGS | 125 mOhm @ 15A, 10V |
VGS(TH)(最大)@ Id | - |
栅极电荷(Qg)@ VGS | 39nC @ 10V |
输入电容(Ciss)@ Vds的 | 2300pF @ 25V |
功率 - 最大 | 227.2W |
安装类型 | Through Hole |
包/盒 | TO-3PSG |
供应商器件封装 | TO-3PSG |
包装材料 | Tube |
动态目录 | N-Channel Standard FETs###/catalog/en/partgroup/n-channel-standard-fets/16413?mpart=RJK60S7DPK-M0%23T0&vendor=559&WT.z_ref_page_type=Part%20Search&WT.z_ref_page_sub_type=Part%20Detail%20Page&WT.z_ref_page_id=0 |
FET特点 | Super Junction |
封装 | Tube |
安装类型 | Through Hole |
电流 - 连续漏极(Id ) @ 25 °C | 30A (Tc) |
封装/外壳 | TO-3PSG |
供应商设备封装 | TO-3PSG |
其他名称 | RJK60S7DPKM0T0 |
开态Rds(最大)@ Id ,V GS | 125 mOhm @ 15A, 10V |
FET型 | MOSFET N-Channel, Metal Oxide |
功率 - 最大 | 227.2W |
标准包装 | 100 |
漏极至源极电压(Vdss) | 600V |
输入电容(Ciss ) @ VDS | 2300pF @ 25V |
闸电荷(Qg ) @ VGS | 39nC @ 10V |
RJK60S7DPK-M0#T0也可以通过以下分类找到
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