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规格书 |
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Current - Continuous Drain (Id) @ 25° C | 30A |
Drain to Source Voltage (Vdss) | 60V |
FET Feature | Standard |
FET Type | MOSFET P-Channel, Metal Oxide |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2190pF @ 25V |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Power - Max | 125W |
Product Change Notification | View |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 15A, 10V |
Supplier Device Package | TO-220AB |
Vgs(th) (Max) @ Id | 4V @ 250µA |
最大门源电压 | ±15 |
最大漏源电压 | 60 |
最高工作温度 | 175 |
通道模式 | Enhancement |
标准包装名称 | TO-220 |
最低工作温度 | -55 |
渠道类型 | P |
封装 | Rail |
最大漏源电阻 | 80@10V |
每个芯片的元件数 | 1 |
供应商封装形式 | TO-220AB |
最大功率耗散 | 125000 |
最大连续漏极电流 | 30 |
引脚数 | 3 |
铅形状 | Through Hole |
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