1N4006T/R
| 制造商 | |
| 描述 | . 1N4006T/R - Diode 800 V 1A Through Hole DO-41 from EIC SEMICONDUCTOR INC.. from now! |
| 分类 |
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规格参数
| Mfr | EIC SEMICONDUCTOR INC. | Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | - | Packaging | Tape & Reel (TR) |
| Technology | Standard | Part Status | Active |
| Mounting Type | Through Hole | Current - Test | 5 µA @ 800 V |
| Package / Case | DO-204AL, DO-41, Axial | Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Voltage - Input (Min) | 1.1 V @ 1 A | Supplier Device Package | DO-41 |
| Reverse Recovery Time (trr) | 2 µs | Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 1A | Operating Temperature - Junction | -65°C ~ 175°C |