vishay / siliconix
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 6TSOP |
| Channel Type | N|P |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 20 V |
| Maximum Continuous Drain Current | 2 A |
| RDS-on | 125@4.5V@N Channel|200@4.5V@P Channel mOhm |
| Maximum Gate Source Voltage | ±12 V |
| Typical Turn-On Delay Time | 10@N Channel|11@P Channel ns |
| Typical Rise Time | 30@N Channel|34@P Channel ns |
| Typical Turn-Off Delay Time | 14@N Channel|19@P Channel ns |
| Typical Fall Time | 6@N Channel|24@P Channel ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Tape & Reel |
| Unit Pack | 0 |
| MOQ | 1 |
| FET Feature | Logic Level Gate |
| Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 2A, 1.5A |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Drain to Source Voltage (Vdss) | 20V |
| Supplier Device Package | 6-TSOP |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V |
| FET Type | N and P-Channel |
| Power - Max | 830mW |
| Gate Charge (Qg) @ Vgs | 3.2nC @ 4.5V |
| Package/Case | 6-TSOP (0.065", 1.65mm Width) |
| rohs | Lead free / RoHS Compliant |
| Other Names | SI3585DV-T1-GE3CT |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Transistor Polarity | N and P-Channel |
| Gate-Source Breakdown Voltage | +/- 12 V |
| Continuous Drain Current | 2.4 A |
| Power Dissipation | 830 mW |
| Minimum Operating Temperature | - 55 C |
| Package / Case | TSOP-6 |
| Part # Aliases | SI3585DV-GE3 |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Drain-Source Breakdown Voltage | +/- 20 V |
| RoHS | RoHS Compliant |
| Continuous Drain Current Id | :1.8A |
| Drain Source Voltage Vds | :20V |
| On Resistance Rds(on) | :0.1ohm |
| Rds(on) Test Voltage Vgs | :4.5V |
| Threshold Voltage Vgs | :600mV |
| Weight (kg) | 0 |
| Tariff No. | 85412900 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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