Vishay/Siliconix
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Product Category | MOSFET |
| RoHS | RoHS Compliant |
| Transistor Polarity | N and P-Channel |
| Drain-Source Breakdown Voltage | +/- 20 V |
| Gate-Source Breakdown Voltage | 12 V |
| Continuous Drain Current | 3.9 A, - 2.1 A |
| Resistance Drain-Source RDS (on) | 0.048 Ohms, 0.162 Ohms |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TSOP-6 |
| Packaging | Reel |
| Fall Time | 8 ns, 7 ns |
| Forward Transconductance gFS (Max / Min) | 12 S, 1 S |
| Gate Charge Qg | 3.2 nC |
| Power Dissipation | 1.4 W |
| Rise Time | 20 ns, 10 ns |
| Typical Turn-Off Delay Time | 11 ns, 13 ns |
| Part # Aliases | SI3585CDV-GE3 |
| Unit Pack | 3000 |
| MOQ | 3000 |
| FET Feature | Logic Level Gate |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 3.5A (Ta), 1.9A (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 20V |
| Supplier Device Package | 6-TSOP |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 2.5A, 4.5V |
| FET Type | N and P-Channel |
| Power - Max | 1.1W |
| Standard Package | 3,000 |
| Input Capacitance (Ciss) @ Vds | 150pF @ 10V |
| Gate Charge (Qg) @ Vgs | 4.8nC @ 10V |
| Package/Case | 6-TSOP (0.065", 1.65mm Width) |
| rohs | Lead free / RoHS Compliant |
| Forward Transconductance - Min | 12 S, 1 S |
| Current - Continuous Drain (Id) @ 25°C | 3.9A, 2.1A |
| 漏源极电压 (Vdss) | 20V |
| 系列 | TrenchFET® |
| 不同 Vds 时的输入电容 (Ciss) | 150pF @ 10V |
| FET 功能 | Logic Level Gate |
| FET 类型 | N and P-Channel |
| 不同 Id 时的 Vgs(th)（最大值） | 1.5V @ 250µA |
| 封装/外壳 | 6-TSOP (0.065", 1.65mm Width) |
| 功率 - 最大值 | 1.1W |
| Factory Pack Quantity | 3000 |
| Series | SI3 |
| Brand | Vishay Semiconductors |
| Height | 1.1 mm |
| Width | 1.65 mm |
| Length | 3.05 mm |
| Tradename | TrenchFET |
| Technology | Si |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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