international rectifier
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 8SOIC |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 30 V |
| Maximum Continuous Drain Current | 6.5 A |
| RDS-on | 29@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 8.1 ns |
| Typical Rise Time | 8.9 ns |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Fall Time | 17 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Tape & Reel |
| FET Feature | Standard |
| Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 6.5A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain to Source Voltage (Vdss) | 30V |
| Supplier Device Package | 8-SO |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 5.8A, 10V |
| FET Type | 2 N-Channel (Dual) |
| Power - Max | 2W |
| Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
| Other Names | IRF7313PBFTR |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| rohs | Lead free / RoHS Compliant |
| Drain Current (Max) | 6.5 A |
| Frequency (Max) | Not Required MHz |
| Gate-Source Voltage (Max) | �20 V |
| Output Power (Max) | Not Required W |
| Power Dissipation | 2 W |
| Noise Figure | Not Required dB |
| Drain-Source On-Res | 0.029 ohm |
| Operating Temp Range | -55C to 150C |
| Package Type | SOIC |
| Pin Count | 8 |
| Polarity | N |
| Type | Power MOSFET |
| Number of Elements | 2 |
| Operating Temperature Classification | Military |
| Drain Efficiency | Not Required % |
| Drain-Source On-Volt | 30 V |
| Power Gain | Not Required dB |
| Rad Hardened | No |
| Continuous Drain Current | 6.5 A |
| DELETED | Compliant |
| Transistor Polarity | :N Channel |
| Continuous Drain Current Id | :6.5A |
| Drain Source Voltage Vds | :30V |
| On Resistance Rds(on) | :29mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :1V |
| No. of Pins | :8 |
| Weight (kg) | 0.002 |
| Tariff No. | 85412100 |
| Current,Drain | 6.5A |
| GateCharge,Total | 22nC |
| PackageType | SO-8 |
| Polarization | DualN-Channel |
| PowerDissipation | 2W |
| Resistance,DraintoSourceOn | 0.029Ohm |
| Temperature,Operating,Maximum | +150°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 26ns |
| Time,Turn-OnDelay | 8.1ns |
| Transconductance,Forward | 14S |
| Voltage,Breakdown,DraintoSource | 30V |
| Voltage,Forward,Diode | 1V |
| Voltage,GatetoSource | ±20V |
| Case | SO8 |
| Transistor type | N-MOSFET x2 |
| Power | 2W |
| Drain-source voltage | 30V |
| Polarisation | unipolar |
| Drain current | 6.5A |
| Multiplicity | 4000 |
| Gross weight | 0.43 g |
| Package type | roll |
| Collective package [pcs] | 4000 |
| spg | 4000 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
|
咨询QQ
热线电话
