international rectifier
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 8SOIC |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 30 V |
| Maximum Continuous Drain Current | 6.5 A |
| RDS-on | 29@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 8.1 ns |
| Typical Rise Time | 8.9 ns |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Fall Time | 17 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Rail / Tube |
| Current,Drain | 6.5A |
| GateCharge,Total | 22nC |
| PackageType | SO-8 |
| Polarization | DualN-Channel |
| PowerDissipation | 2W |
| Resistance,DraintoSourceOn | 0.029Ohm |
| Temperature,Operating,Maximum | +150°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 26ns |
| Time,Turn-OnDelay | 8.1ns |
| Transconductance,Forward | 14S |
| Voltage,Breakdown,DraintoSource | 30V |
| Voltage,Forward,Diode | 1V |
| Voltage,GatetoSource | ±20V |
| rohs | RoHS Compliant Part |
| Case | SO8 |
| Gate charge | 22nC |
| Transistor kind | HEXFET |
| Transistor type | N-MOSFET x2 |
| Power | 2W |
| Drain-source voltage | 30V |
| Polarisation | unipolar |
| Drain current | 6.5A |
| Multiplicity | 1 |
| Gross weight | 0.29 g |
| gate-source voltage | 20V |
| On-state resistance | 29mΩ |
| Junction-to-ambient thermal resistance | 62.5K/W |
| Collective package [pcs] | 95 |
| spg | 95 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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