Infineon Technologies
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Factory Pack Quantity | 2000 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 35 nC |
| Package / Case | HSOF-8 |
| Fall Time | 7 ns |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | CoolMOS |
| Configuration | 1 N-Channel |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 24 A |
| Length | 10.58 mm |
| Rds On - Drain-Source Resistance | 228 mOhms |
| RoHS | RoHS Compliant |
| Typical Turn-Off Delay Time | 68 ns |
| Channel Mode | Enhancement |
| Series | CoolMOS C7 Gold |
| Height | 2.4 mm |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 13 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 156 W |
| Rise Time | 7 ns |
| Technology | Si |
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