Infineon Technologies AG
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| Type | Description |
|---|---|
| FET Feature | Standard |
| Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 3.5V @ 272µA |
| Drain to Source Voltage (Vdss) | 100V |
| Standard Package | 2,000 |
| Supplier Device Package | PG-HSOF-8-1 |
| Rds On (Max) @ Id, Vgs | 2 mOhm @ 150A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 375W |
| Package / Case | 8-PowerSFN |
| Input Capacitance (Ciss) @ Vds | 11200pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Gate Charge (Qg) @ Vgs | 156nC @ 10V |
| Other Names | IPT020N10N3ATMA1CT |
| rohs | Lead free by exemption / RoHS Compliant |
| Factory Pack Quantity | 2000 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 10.1 mm |
| Qg - Gate Charge | 207 nC |
| Vgs - Gate-Source Voltage | +/- 20 V |
| Fall Time | 18 ns |
| Mounting Style | SMD/SMT |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | 1 N-Channel |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 125 S |
| Id - Continuous Drain Current | 300 A |
| Length | 10.58 mm |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| RoHS | RoHS Compliant |
| Typical Turn-Off Delay Time | 84 ns |
| Channel Mode | Enhancement |
| Height | 2.4 mm |
| Typical Turn-On Delay Time | 34 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 375 W |
| Rise Time | 58 ns |
| Technology | Si |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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