INFINEON TECHNOLOGIES AG
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 高度 | 2.4mm |
| 晶体管材料 | Si |
| 类别 | 功率 MOSFET |
| 长度 | 10.58mm |
| 典型输入电容值@Vds | 11200 pF @ 50 V |
| 通道模式 | 增强 |
| 安装类型 | 表面贴装 |
| 每片芯片元件数目 | 1 |
| 最大漏源电阻值 | 0.0037 Ω |
| 最高工作温度 | +175 °C |
| 通道类型 | N |
| 最低工作温度 | -55 °C |
| 最大功率耗散 | 375 W |
| 最大栅源电压 | ±20 V |
| 宽度 | 10.1mm |
| 尺寸 | 10.58 x 10.1 x 2.4mm |
| 正向二极管电压 | 1V |
| 最大漏源电压 | 100 V |
| 典型接通延迟时间 | 34 ns |
| 典型关断延迟时间 | 84 ns |
| 封装类型 | HSOF |
| 最大连续漏极电流 | 300 A |
| 引脚数目 | 8 |
| 正向跨导 | 250s |
| 晶体管配置 | 单 |
| 典型栅极电荷@Vgs | 156 nC @ 10 V |
| Factory Pack Quantity | 2000 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | +/- 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 10.1 mm |
| Qg - Gate Charge | 207 nC |
| Package / Case | HSOF-8 |
| Fall Time | 18 ns |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | 1 N-Channel |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 125 S |
| Id - Continuous Drain Current | 300 A |
| Length | 10.58 mm |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| RoHS | RoHS Compliant |
| Typical Turn-Off Delay Time | 84 ns |
| Channel Mode | Enhancement |
| Series | XPT020N10 |
| Height | 2.4 mm |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 34 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 375 W |
| Rise Time | 58 ns |
| Technology | Si |
咨询QQ
热线电话
