所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Product Category | Phototransistors |
| RoHS | RoHS Compliant |
| Maximum Power Dissipation | 90 mW |
| Maximum Dark Current | 50 nA |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Collector-Emitter Saturation Voltage | 150 mV |
| Fall Time | 7 us |
| Maximum Operating Temperature | + 80 C |
| Minimum Operating Temperature | - 40 C |
| Product | Phototransistors |
| Rise Time | 7 us |
| Factory Pack Quantity | 1000 |
| Type | Chip |
| Wavelength | 850 nm |
| Part # Aliases | Q62702P0020 |
| Current - Dark (Id) (Max) | 25nA |
| Current - Collector (Ic) (Max) | 50mA |
| Orientation | Top View |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 32V |
| Viewing Angle | 36° |
| Power - Max | 90mW |
| Standard Package | 1,000 |
| Other Names | Q62702P0020 |
| Package/Case | Radial - 2 Leads |
| rohs | Lead free / RoHS Compliant |
| Maximum Collector Current | 50 mA |
| Maximum On-State Collector Current | 50 mA |
| Collector-Emitter Breakdown Voltage | 35 V |
| Package / Case | Miniature Array |
| 检测频谱 | 红外、可见光 |
| 典型上升时间 | 6µs |
| 最大光电流 | 0.25µA |
| 安装类型 | 通孔安装 |
| 频谱范围内的灵敏度 | 450 → 1100 nm |
| 高度 | 3.6mm |
| 最大暗电流 | 50nA |
| 检测到的最小波长 | 450nm |
| 宽度 | 2.4mm |
| 封装类型 | DIP |
| 针数目 | 2 |
| 典型下降时间 | 6µs |
| 半感光角度 | 36 ° |
| 长度 | 2.4mm |
| 通道数目 | 1 |
| 尺寸 | 2.4 x 2.4 x 3.6mm |
| 极性 | NPN |
| 检测到的最大波长 | 1100nm |
| 集电极电流 | 50mA |
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