vishay / semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 2Side View |
| Type | Chip |
| Wavelength | 940 nm |
| Maximum Reverse Voltage | 60 V |
| Maximum Light Current | 85(Typ) uA |
| Maximum Rise Time Range | 15 to 250 ns |
| Maximum Dark Current | 30 nA |
| Photodiode Material | Si |
| Lens Type | Epoxy |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | 100 °C |
| Standard Package | Bulk |
| Product Category | Photodiodes |
| RoHS | RoHS Compliant |
| Product | PIN Photodiodes |
| Reverse Voltage | 60 V |
| Peak Wavelength | 940 nm |
| Rise Time | 100 ns |
| Fall Time | 100 ns |
| Half Intensity Angle Degrees | 60 deg |
| Package / Case | Side Looker |
| Dark Current | 2 nA |
| Mounting Style | Through Hole |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Packaging | Bulk |
| Photocurrent | 85 uA |
| Power Dissipation | 215 mW |
| Responsivity | 0.6 A/W |
| Factory Pack Quantity | 4000 |
| Confezione fornitore | Side View |
| Massima tensione inversa | 60 |
| Montaggio | Through Hole |
| Corrente chiara massima | 85(Typ) |
| Materiale fotodiodo | Si |
| Tempo di discesa massimo | 100(Typ) |
| Package Width | 5 |
| PCB | 2 |
| Polarità | Forward |
| Tempo di salita massimo | 100(Typ) |
| Tipo di fotodiodo | PIN |
| RoHS UE | Compliant |
| Dissipazione massima della potenza | 215 |
| Tipo | Chip |
| Nome standard sulla confezione | Side View |
| Tipo di lente | Epoxy |
| Lunghezza d'onda di picco | 940 |
| Corrente di riposo massima | 30 |
| Temperatura d'esercizio minima | -40 |
| Numero dei pin | 2 |
| Confezione | Bulk |
| Package Length | 4.5 |
| Package Height | 6 |
| Massima temperatura d'esercizio | 100 |
| Fotosensibilità | 0.6A/W |
| Matchcode | BPV22NF |
| Detection angle | 60° |
| Sensitive Area | 7.5mm² |
| Unit Pack | 4000 |
| Standard Leadtime | 6 weeks |
| MOQ | 4000 |
| Sens.range min | 215nm |
| Rise/Fall time | 0.1ns |
| SMD/THT | THT |
| Dark current | 0.55nA |
| Automotive | NO |
| Max.sensivity | 940nm |
| Sens.range max. | 120nm |
| Spectral Range | 790nm ~ 1050nm |
| Active Area | 7.5mm² |
| Current - Dark (Typ) | 2nA |
| Viewing Angle | 120° |
| Operating Temperature | -40°C ~ 100°C |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Other Names | 751-1007 |
| Diode Type | PIN |
| rohs | Lead free / RoHS Compliant |
| Angle of Half Sensitivity | 60 ° |
| Dimensions | 4.5 x 5 x 6mm |
| Diode Material | Si |
| Height | 6mm |
| Length | 4.5mm |
| Maximum Wavelength Detected | 1050nm |
| Minimum Wavelength Detected | 790nm |
| Mounting Type | PCB Through Hole |
| Number of Pins | 2 |
| Package Type | Side Looker |
| Peak Photo Sensitivity | 0.6A/W |
| Polarity | Forward |
| Spectrums Detected | Infrared |
| Wavelength of Peak Sensitivity | 940nm |
| Width | 5mm |
| Forward Current | 50 mA |
| Mounting | Through Hole |
| Operating Temp Range | -55C to 100C |
| Pin Count | 2 |
| Dark Current (Max) | 30 nA |
| Light Current | 85 uA |
| Photodiode Type | PIN |
| Operating Temperature Classification | Industrial |
| Reverse Breakdown Voltage | 60 V |
| Rad Hardened | No |
| DELETED | Compliant |
| Angle of Half Sensitivity ± | :60° |
| Diode Case Style | :Radial Leaded |
| No. of Pins | :2 |
| Operating Temperature Min | :-40°C |
| Operating Temperature Max | :100°C |
| Breakdown Voltage Vbr | :60V |
| External Depth | :5mm |
| External Length / Height | :6mm |
| External Width | :4.5mm |
| Fall Time tf | :100ns |
| Forward Voltage VF Max | :1.3V |
| Junction Temperature Tj Max | :100°C |
| Junction Temperature Tj Min | :100°C |
| Lead Length | :26.5mm |
| Lead Spacing | :2.54mm |
| Open Circuit Voltage | :370V |
| Operating Temperature Range | :-40°C to +100°C |
| Reverse Voltage Vr Max | :60V |
| Sensitivity | :0.6A/W |
| Short Circuit Current | :80µA |
| Storage Temperature Max | :100°C |
| Storage Temperature Min | :-55°C |
| Wavelength Typ | :940nm |
| Weight (kg) | 0.000198 |
| Tariff No. | 85414090 |
| Active area | 7.5mm2 |
| Multiplicity | 1 |
| Viewing angle | 120° |
| Gross weight | 0.37 g |
| Wavelength of peak sensitivity | 940nm |
| Photodetector type | PIN IR photodiode |
| Collective package [pcs] | 100 |
| Reverse light current at 1klx | 85µA |
| spg | 100 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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