vishay / semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Type | Chip |
| Wavelength | 950 nm |
| Maximum Reverse Voltage | 60 V |
| Maximum Light Current | 80(Typ) uA |
| Maximum Rise Time Range | 15 to 250 ns |
| Maximum Dark Current | 30 nA |
| Photodiode Material | Si |
| Lens Type | Epoxy |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | 100 °C |
| Standard Package | Bulk |
| Product Category | Photodiodes |
| RoHS | RoHS Compliant |
| Product | PIN Photodiodes |
| Reverse Voltage | 60 V |
| Peak Wavelength | 950 nm |
| Rise Time | 100 ns |
| Fall Time | 100 ns |
| Half Intensity Angle Degrees | 60 deg |
| Package / Case | TO-92 |
| Dark Current | 2 nA |
| Mounting Style | Through Hole |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Packaging | Tube |
| Photocurrent | 80 uA |
| Power Dissipation | 215 mW |
| Responsivity | 0.6 A/W |
| Factory Pack Quantity | 4000 |
| Polarity | Forward |
| Maximum Light Current | 80(Typ) |
| Mounting | Through Hole |
| Package Width | 5 |
| PCB | 2 |
| Maximum Power Dissipation | 215 |
| EU RoHS | Compliant |
| Photo Sensitivity | 0.6A/W |
| Maximum Reverse Voltage | 60 |
| Maximum Fall Time | 100(Typ) |
| Photodiode Type | PIN |
| Maximum Dark Current | 30 |
| Peak Wavelength | 950 |
| Minimum Operating Temperature | -40 |
| Maximum Operating Temperature | 100 |
| Maximum Forward Voltage | 1.3 |
| Package Length | 4.5 |
| Pin Count | 2 |
| Package Height | 6 |
| Maximum Rise Time | 100(Typ) |
| Spectral Range | 870nm ~ 1050nm |
| Active Area | 7.5mm² |
| Current - Dark (Typ) | 2nA |
| Viewing Angle | 120° |
| Operating Temperature | -40°C ~ 100°C |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Package/Case | Radial, Side View |
| Other Names | 751-1006 |
| Diode Type | PIN |
| rohs | Lead free / RoHS Compliant |
| Angle of Half Sensitivity | 60 ° |
| Dimensions | 4.5 x 5 x 6mm |
| Diode Material | Si |
| Height | 6mm |
| Length | 4.5mm |
| Maximum Wavelength Detected | 1050nm |
| Minimum Wavelength Detected | 870nm |
| Mounting Type | PCB Through Hole |
| Number of Pins | 2 |
| Peak Photo Sensitivity | 0.6A/W |
| Spectrums Detected | Infrared |
| Wavelength of Peak Sensitivity | 950nm |
| Width | 5mm |
| Forward Current | 50 mA |
| Operating Temp Range | -55C to 100C |
| Dark Current (Max) | 30 nA |
| Light Current | 80 uA |
| Operating Temperature Classification | Industrial |
| Forward Voltage | 1.3 V |
| Reverse Breakdown Voltage | 60 V |
| Rad Hardened | No |
| DELETED | Compliant |
| Angle of Half Sensitivity ± | :60° |
| Diode Case Style | :Radial Leaded |
| No. of Pins | :2 |
| Operating Temperature Min | :-40°C |
| Operating Temperature Max | :100°C |
| Breakdown Voltage Vbr | :60V |
| Operating Temperature Range | :-40°C to +100°C |
| Reverse Voltage Vr Max | :1.3V |
| Sensitivity | :0.6A/W |
| Wavelength Typ | :950nm |
| Weight (kg) | 0.0001 |
| Tariff No. | 85414090 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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