厂商型号:

BD440G

芯天下内部编号:
277-BD440G
生产厂商:

on semiconductor

microsemi
描述:
T
客户编号:
规格书:

所示图像仅为示意图。请从产品数据表中获得准确的规格。

产品参数

Type Description
Package 3TO-225
Type PNP
Pin Count 3
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 4 A
Minimum DC Current Gain 20@10mA@5V|40@500mA@1V|25@2A@1V
Maximum Operating Frequency 3(Min) MHz
Maximum Collector Emitter Saturation Voltage 0.8@0.3A@3A V
Operating Temperature -55 to 150 °C
Maximum Power Dissipation 36000 mW
Mounting Through Hole
Standard Package Bulk
Standard Package Boxed
Maximum DC Collector Current 4
EU RoHS Compliant
Maximum Operating Temperature 150
Minimum Operating Temperature -55
Maximum Power Dissipation 36000
Maximum Emitter Base Voltage 5
Maximum Transition Frequency 3(Min)
Packaging Bulk
Number of Elements per Chip 1
Maximum Collector Base Voltage 60
Supplier Package TO-225
Maximum Collector Emitter Voltage 60
Current - Collector (Ic) (Max) 4A
Transistor Type PNP
Mounting Type Through Hole
Frequency - Transition 3MHz
Vce Saturation (Max) @ Ib, Ic 800mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Supplier Device Package TO225AA
Power - Max 36W
Package / Case TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 1V
rohs Lead free / RoHS Compliant
Factory Pack Quantity 500
Collector-Emitter Saturation Voltage 0.8 V
Product Category Transistors Bipolar - BJT
Transistor Polarity PNP
Emitter- Base Voltage VEBO 5 V
DC Collector/Base Gain hfe Min 20
Gain Bandwidth Product fT 3 MHz
Collector- Emitter Voltage VCEO Max 60 V
Mounting Style Through Hole
Collector- Base Voltage VCBO 60 V
Minimum Operating Temperature - 55 C
Configuration Single
Maximum Operating Temperature + 150 C
RoHS RoHS Compliant
Continuous Collector Current 4 A
Collector Current (DC) 4 A
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Frequency 3 MHz
Power Dissipation 36 W
Operating Temp Range -55C to 150C
Package Type TO-225
Number of Elements 1
DC Current Gain 20
Operating Temperature Classification Military
Rad Hardened No
频率 - 跃迁 3MHz
不同 Ib、Ic 时的 Vce 饱和值(最大值) 800mV @ 300mA, 3A
晶体管类型 PNP
不同 Ic、Vce 时的 DC 电流增益 (hFE)(最小值) 40 @ 500mA, 1V
封装/外壳 TO-225AA, TO-126-3
功率 - 最大值 36W
电流 - 集电极 (Ic)(最大值) 4A
电压 - 集射极击穿(最大值) 60V

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