Advanced Semiconductor, Inc.
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 安装风格 | SMD/SMT |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | 40 V |
| 连续漏极电流 | 16 A |
| 封装 | Tray |
| 功率耗散 | 300 W |
| 频率 | 175 MHz |
| 最低工作温度 | - 65 C |
| 封装/外壳 | Case 211-11 |
| 配置 | Single |
| 最高工作温度 | + 200 C |
| 漏源击穿电压 | 65 V |
| RoHS | RoHS Compliant |
| Vgs - Gate-Source Voltage | 40 V |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| 技术 | Si |
| 品牌 | Advanced Semiconductor, Inc. |
| 工作频率 | 175 MHz |
| Pd - Power Dissipation | 300 W |
| Id - Continuous Drain Current | 16 A |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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