vishay / semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 包装 | 4HVMDIP |
| 通道模式 | Enhancement |
| 最大漏源电压 | 100 V |
| 最大连续漏极电流 | 1.3 A |
| RDS -于 | 270@10V mOhm |
| 最大门源电压 | ±20 V |
| 典型导通延迟时间 | 6.8 ns |
| 典型上升时间 | 27 ns |
| 典型关闭延迟时间 | 18 ns |
| 典型下降时间 | 17 ns |
| 工作温度 | -55 to 175 °C |
| 安装 | Through Hole |
| 标准包装 | Bulk |
| 标准包装 | Rail / Tube |
| 最大门源电压 | ±20 |
| 欧盟RoHS指令 | Compliant |
| 最高工作温度 | 175 |
| 最低工作温度 | -55 |
| Package Height | 3.37(Max) |
| 最大功率耗散 | 1300 |
| 渠道类型 | N |
| Maximum Drain Source Resistance | 270@10V |
| 最大漏源电压 | 100 |
| 每个芯片的元件数 | 1 |
| Package Width | 6.29(Max) |
| 供应商封装形式 | HVMDIP |
| Package Length | 5(Max) |
| PCB | 4 |
| 最大连续漏极电流 | 1.3 |
| 引脚数 | 4 |
| 铅形状 | Through Hole |
| 单位包 | 100 |
| 最小起订量 | 2500 |
| FET特点 | Standard |
| 封装 | Tube |
| 安装类型 | Through Hole |
| 电流 - 连续漏极（Id ） @ 25 °C | 1.3A (Ta) |
| 的Vgs（th ） （最大）@ Id | 4V @ 250µA |
| 供应商设备封装 | 4-DIP, Hexdip, HVMDIP |
| 其他名称 | *IRFD120PBF |
| 开态Rds（最大）@ Id ，V GS | 270 mOhm @ 780mA, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 1.3W |
| 漏极至源极电压（Vdss） | 100V |
| 输入电容（Ciss ） @ VDS | 360pF @ 25V |
| 闸电荷（Qg ） @ VGS | 16nC @ 10V |
| 封装/外壳 | 4-DIP (0.300", 7.62mm) |
| RoHS指令 | Lead free / RoHS Compliant |
| 类别 | Power MOSFET |
| 配置 | Dual Drain, Single |
| 外形尺寸 | 5 x 6.29 x 3.37mm |
| 身高 | 3.37mm |
| 长度 | 5mm |
| 最大漏源电阻 | 0.27 Ω |
| 最高工作温度 | +175 °C |
| 最大功率耗散 | 1.3 W |
| 最低工作温度 | -55 °C |
| 包装类型 | HexDIP, HVMDIP |
| 典型栅极电荷@ VGS | 16 nC V @ 10 |
| 典型输入电容@ VDS | 360 pF V @ 25 |
| 宽度 | 6.29mm |
| 漏极电流（最大值） | 1.3 A |
| 频率（最大） | Not Required MHz |
| 栅源电压（最大值） | �20 V |
| 输出功率（最大） | Not Required W |
| 功率耗散 | 1.3 W |
| 噪声系数 | Not Required dB |
| 漏源导通电阻 | 0.27 ohm |
| 工作温度范围 | -55C to 175C |
| 极性 | N |
| 类型 | Power MOSFET |
| 元件数 | 1 |
| 工作温度分类 | Military |
| 漏极效率 | Not Required % |
| 漏源导通电压 | 100 V |
| 功率增益 | Not Required dB |
| 弧度硬化 | No |
| 连续漏极电流 | 1.3 A |
| 删除 | Compliant |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :1.3A |
| Drain Source Voltage Vds | :100V |
| On Resistance Rds(on) | :270mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :4V |
| 功耗 | :1.3W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :175°C |
| Transistor Case Style | :DIP |
| No. of Pins | :4 |
| MSL | :- |
| Current Id Max | :1.3A |
| Current Temperature | :25°C |
| Device Marking | :IRFD120PBF |
| Full Power Rating Temperature | :25°C |
| Junction Temperature Tj Max | :150°C |
| Junction Temperature Tj Min | :-55°C |
| 引线间距 | :2.54mm |
| No. of Transistors | :1 |
| 工作温度范围 | :-55°C to +175°C |
| Pulse Current Idm | :10.4A |
| Row Pitch | :7.62mm |
| Voltage Vds Typ | :100V |
| Voltage Vgs Max | :20V |
| Voltage Vgs Rds on Measurement | :10V |
| Weight (kg) | 0.000255 |
| Tariff No. | 85412900 |
| Current,Drain | 1.3A |
| GateCharge,Total | 16nC |
| PackageType | HD-1 |
| 极化方式 | N-Channel |
| PowerDissipation | 1.3W |
| Resistance,DraintoSourceOn | 0.27Ohm |
| Temperature,Operating,Maximum | +175°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 18ns |
| Time,Turn-OnDelay | 6.8ns |
| Transconductance,Forward | 0.8S |
| Voltage,Breakdown,DraintoSource | 100V |
| Voltage,Forward,Diode | 2.5V |
| Voltage,GatetoSource | ±20V |
| 案例 | DIP4 |
| Transistor type | N-MOSFET |
| 功率 | 1.3W |
| Drain-source voltage | 100V |
| 极化 | unipolar |
| Drain current | 1.3A |
| Multiplicity | 1 |
| Gross weight | 0.59 g |
| On-state resistance | 0.3Ω |
| Collective package [pcs] | 200 |
| spg | 200 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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