Vishay / Siliconix
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 单位包 | 3000 |
| 最小起订量 | 3000 |
| FET特点 | Logic Level Gate |
| 封装 | Tape & Reel (TR) |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极（Id ） @ 25 °C | 37.3A (Ta), 50A (Tc) |
| 的Vgs（th ） （最大）@ Id | 2.2V @ 250µA |
| 漏极至源极电压（Vdss） | 30V |
| 供应商设备封装 | PowerPAK® SO-8 |
| 开态Rds（最大）@ Id ，V GS | 2 mOhm @ 15A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 50W |
| 标准包装 | 3,000 |
| 输入电容（Ciss ） @ VDS | 6150pF @ 15V |
| 闸电荷（Qg ） @ VGS | 117nC @ 10V |
| 封装/外壳 | PowerPAK® SO-8 |
| RoHS指令 | Lead free / RoHS Compliant |
| 其他名称 | SIRA02DP-T1-GE3CT |
| 安装风格 | SMD/SMT |
| 产品种类 | MOSFET |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | 2.2 V |
| 连续漏极电流 | 50 A |
| RDS（ON） | 2 mOhms |
| 功率耗散 | 50 W |
| 封装/外壳 | PowerPAK SO-8 |
| 零件号别名 | SIRA02DP-GE3 |
| 配置 | Single Quad Drain Triple Source |
| 最高工作温度 | + 150 C |
| 漏源击穿电压 | 30 V |
| RoHS | RoHS Compliant By Exemption |
| 栅极电荷Qg | 34.3 nC |
| Continuous Drain Current Id | :50A |
| Drain Source Voltage Vds | :30V |
| On Resistance Rds(on) | :0.00165ohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :1.1V |
| 功耗 | :50W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :PowerPAK SO |
| No. of Pins | :8 |
| MSL | :MSL 1 - Unlimited |
| 工作温度范围 | :-55°C to +150°C |
| Voltage Vgs Max | :30V |
| Weight (kg) | 0.00195 |
| Tariff No. | 85412900 |
| ChannelType | N |
| Current,Drain | 50A |
| FallTime | 16ns |
| GateCharge,Total | 34.3nC |
| OperatingandStorageTemperature | -55to150°C |
| PackageType | PowerPAKSO-8 |
| 极化方式 | N-Channel |
| PowerDissipation | 32W |
| Resistance,DraintoSourceOn | 0.002Ohm |
| Resistance,Thermal,JunctiontoCase | 2.5°C/W |
| Temperature,Operating,Maximum | 150°C |
| Temperature,Operating,Minimum | -55°C |
| ThermalResistance,JunctiontoAmbient | 25°C/W |
| Time,Rise | 20ns |
| Time,Turn-OffDelay | 80ns |
| Time,Turn-OnDelay | 32ns |
| Transconductance,Forward | 110S |
| Voltage,Breakdown,DraintoSource | 30V |
| Voltage,DiodeForward | 1.1V |
| Voltage,DraintoSource | 30V |
| Voltage,Forward,Diode | 1.1V |
| Voltage,GatetoSource | 20V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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