规格书 |
![]() SI4564DY ![]() |
标准包装 | 2,500 |
FET 型 | N and P-Channel |
FET特点 | Logic Level Gate |
漏极至源极电压(VDSS) | 40V |
电流-连续漏极(编号)@ 25°C | 10A, 9.2A |
Rds(最大)@ ID,VGS | 17.5 mOhm @ 8A, 10V |
VGS(TH)(最大)@ Id | 2V @ 250µA |
栅极电荷(Qg)@ VGS | 31nC @ 10V |
输入电容(Ciss)@ Vds的 | 855pF @ 20V |
功率 - 最大 | 3.1W, 3.2W |
安装类型 | Surface Mount |
包/盒 | 8-SOIC (0.154", 3.90mm 宽度 ) |
供应商器件封装 | 8-SOIC N |
包装材料 | Tape & Reel (TR) |
动态目录 | N and P-Channel Logic Level Gate FETs###/catalog/en/partgroup/n-and-p-channel-logic-level-gate-fets/16933?mpart=SI4564DY-T1-GE3&vendor=742&WT.z_ref_page_type=Part%20Search&WT.z_ref_page_sub_type=Part%20Detail%20Page&WT.z_ref_page_id=0;;其他的名称; |
FET特点 | Logic Level Gate |
封装 | Tape & Reel (TR) |
安装类型 | Surface Mount |
电流 - 连续漏极(Id ) @ 25 °C | 10A, 9.2A |
的Vgs(th ) (最大)@ Id | 2V @ 250µA |
漏极至源极电压(Vdss) | 40V |
供应商设备封装 | 8-SOIC N |
开态Rds(最大)@ Id ,V GS | 17.5 mOhm @ 8A, 10V |
FET型 | N and P-Channel |
功率 - 最大 | 3.1W, 3.2W |
标准包装 | 2,500 |
输入电容(Ciss ) @ VDS | 855pF @ 20V |
闸电荷(Qg ) @ VGS | 31nC @ 10V |
封装/外壳 | 8-SOIC (0.154", 3.90mm Width) |
其他名称 | SI4564DY-T1-GE3CT |
RoHS指令 | Lead free / RoHS Compliant |
安装风格 | SMD/SMT |
晶体管极性 | N and P-Channel |
连续漏极电流 | 10 A, - 9.2 A |
正向跨导 - 闵 | 25 S, 27 S |
功率耗散 | 3.1 W, 3.2 W |
最低工作温度 | - 55 C |
封装/外壳 | SO-8 |
零件号别名 | SI4564DY-GE3 |
配置 | Single |
最高工作温度 | + 150 C |
漏源击穿电压 | +/- 40 V |
RoHS | RoHS Compliant By Exemption |
栅极电荷Qg | 20.5 nC, 41.5 nC |
Continuous Drain Current Id | :10A |
Drain Source Voltage Vds | :40V |
On Resistance Rds(on) | :0.0145ohm |
Rds(on) Test Voltage Vgs | :10V |
Threshold Voltage Vgs | :800mV |
功耗 | :3.1W |
Operating Temperature Min | :-55°C |
Operating Temperature Max | :150°C |
Transistor Case Style | :SOIC |
No. of Pins | :8 |
MSL | :MSL 1 - Unlimited |
Continuous Drain Current Id, N Channel | :10A |
Continuous Drain Current Id, P Channel | :-9.2A |
Drain Source Voltage Vds, N Channel | :40V |
Drain Source Voltage Vds, P Channel | :-40V |
Module Configuration | :Dual |
On Resistance Rds(on), N Channel | :0.0145ohm |
On Resistance Rds(on), P Channel | :0.0175ohm |
工作温度范围 | :-55°C to +150°C |
Weight (kg) | 0.0005 |
Tariff No. | 85412900 |
SI4564DY-T1-GE3也可以通过以下分类找到
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