NTE Electronics
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Complement to | PNP |
| Current, Collector | 100 mA |
| Current, Collector Cutoff | 30 nA (Max.) |
| Current, Continuous Collector | 100 mA |
| Current, Gain | 400 |
| Device Dissipation | 0.36 W |
| 频率 | 90 MHz |
| 材料类型 | Silicon |
| 包装类型 | TO-92 |
| 极性 | NPN |
| 功率耗散 | 360 mW |
| Primary Type | Si |
| Temperature Range, Junction, Operating | -55 to 125 °C |
| 晶体管极性 | NPN |
| 晶体管类型 | NPN |
| 类型 | Amplifier, High Gain |
| Voltage, Breakdown, Collector to Base | 70 V |
| Voltage, Breakdown, Collector to Emitter | 50 V |
| Voltage, Breakdown, Emitter to Base | 5 V |
| Voltage, Collector to Base | 70 V |
| Voltage, Collector to Emitter | 50 V |
| Voltage, Collector to Emitter, Saturation | 0.125 V |
| Voltage, Emitter to Base | 5 V |
| Amplification | 400 ...800 |
| Collector-emitter voltage | 50 |
| Collector current | 100 mA |
| Power dissipation | 360 |
| Housing type | TO-92 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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