NTE Electronics
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Current, Collector | 10 A |
| Current, Gain | 10 |
| Device Dissipation | 125 W |
| 频率 | 2.5 MHz |
| Gain, DC Current, Minimum | 10 |
| 包装类型 | TO-3 |
| 极性 | NPN |
| 功率耗散 | 125 W |
| Primary Type | Si |
| Resistance, Thermal, Junction to Case | 1 °C/W |
| Temperature, Junction, Operating | -65 to +150 °C |
| 晶体管极性 | NPN |
| 类型 | High Voltage, Switch |
| Voltage, Breakdown, Collector to Emitter | 325 V |
| Voltage, Collector to Base | 400 V |
| Voltage, Collector to Emitter | 400 V |
| Voltage, Collector to Emitter, Saturation | 0.7 V |
| Voltage, Emitter to Base | 5 V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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