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| Type | Description |
|---|---|
| 包装 | 3TO-220 |
| 通道模式 | Enhancement |
| 最大漏源电压 | 700 V |
| 最大连续漏极电流 | 8.6 A |
| RDS -于 | 850@10V mOhm |
| 最大门源电压 | ±30 V |
| 典型导通延迟时间 | 22 ns |
| 典型上升时间 | 19 ns |
| 典型关闭延迟时间 | 46 ns |
| 工作温度 | -55 to 150 °C |
| 安装 | Through Hole |
| 标准包装 | Rail / Tube |
| 最大门源电压 | ±30 |
| Package Width | 4.6(Max) |
| PCB | 3 |
| 最大功率耗散 | 150000 |
| 最大漏源电压 | 700 |
| 欧盟RoHS指令 | Compliant |
| 最大漏源电阻 | 850@10V |
| 每个芯片的元件数 | 1 |
| 最低工作温度 | -55 |
| 供应商封装形式 | TO-220 |
| 标准包装名称 | TO-220 |
| 最高工作温度 | 150 |
| 渠道类型 | N |
| Package Length | 10.4(Max) |
| 引脚数 | 3 |
| Package Height | 9.15(Max) |
| 最大连续漏极电流 | 8.6 |
| 封装 | Tube |
| 标签 | Tab |
| 铅形状 | Through Hole |
| FET特点 | Standard |
| 安装类型 | Through Hole |
| 电流 - 连续漏极(Id ) @ 25 °C | 8.6A (Tc) |
| 的Vgs(th ) (最大)@ Id | 4.5V @ 100µA |
| 漏极至源极电压(Vdss) | 700V |
| 供应商设备封装 | TO-220AB |
| 开态Rds(最大)@ Id ,V GS | 850 mOhm @ 4.5A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 150W |
| 封装/外壳 | TO-220-3 |
| 输入电容(Ciss ) @ VDS | 2000pF @ 25V |
| 闸电荷(Qg ) @ VGS | 90nC @ 10V |
| RoHS指令 | Lead free / RoHS Compliant |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :8.6A |
| Drain Source Voltage Vds | :700V |
| On Resistance Rds(on) | :850mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :3.75V |
| 功耗 | :150W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-220 |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Avalanche Single Pulse Energy Eas | :350mJ |
| Capacitance Ciss Typ | :2000pF |
| Current Iar | :8.6A |
| Current Id Max | :8.6A |
| On State resistance @ Vgs = 10V | :850mohm |
| 工作温度范围 | :-55°C to +150°C |
| Pulse Current Idm | :34A |
| 端接类型 | :Through Hole |
| Voltage Vds | :700V |
| Voltage Vds Typ | :700V |
| Voltage Vgs Max | :30V |
| Voltage Vgs Rds on Measurement | :10V |
| Voltage Vgs th Max | :4.5V |
| Voltage Vgs th Min | :3V |
| Weight (kg) | 0.00204 |
| Tariff No. | 85412900 |
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