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Fairchild Semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 集电极最大直流电流 | 0.5 |
| 最低工作温度 | -55 |
| 安装 | Through Hole |
| Maximum Transition Frequency | 50(Min) |
| Package Width | 4.19(Max) |
| PCB | 3 |
| 最大功率耗散 | 625 |
| 类型 | PNP |
| 欧盟RoHS指令 | Compliant |
| 每个芯片的元件数 | 1 |
| Maximum Collector Base Voltage | 300 |
| 最大集电极发射极电压 | 300 |
| 供应商封装形式 | TO-92 |
| 标准包装名称 | TO-92 |
| 最高工作温度 | 150 |
| Package Length | 5.2(Max) |
| 引脚数 | 3 |
| 最小直流电流增益 | 25@1mA@10V|40@10mA@10V|25@30mA@10V |
| Package Height | 5.33(Max) |
| Maximum Emitter Base Voltage | 5 |
| 封装 | Bulk |
| 铅形状 | Through Hole |
| 电流 - 集电极（ Ic）（最大） | 500mA |
| 晶体管类型 | PNP |
| 安装类型 | Through Hole |
| 频率 - 转换 | 50MHz |
| 下的Vce饱和度（最大） Ib，Ic条件 | 500mV @ 2mA, 20mA |
| 标准包装 | 2,000 |
| 电压 - 集电极发射极击穿（最大） | 300V |
| 供应商设备封装 | TO-92-3 |
| 功率 - 最大 | 625mW |
| 封装/外壳 | TO-226-3, TO-92-3 (TO-226AA) |
| 直流电流增益（ hFE）（最小值） Ic，Vce时 | 25 @ 30mA, 10V |
| RoHS指令 | Lead free / RoHS Compliant |
| 晶体管极性 | :PNP |
| Collector Emitter Voltage V(br)ceo | :300V |
| Transition Frequency ft | :50MHz |
| 功耗 | :625mW |
| DC Collector Current | :500mA |
| DC Current Gain hFE | :40 |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-92 |
| No. of Pins | :3 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Collector Emitter Voltage Vces | :500mV |
| 连续集电极电流Ic最大 | :500mA |
| Current Ic @ Vce Sat | :20mA |
| Current Ic Continuous a Max | :500mA |
| Current Ic hFE | :10mA |
| Full Power Rating Temperature | :25°C |
| Gain Bandwidth ft Min | :50MHz |
| Gain Bandwidth ft Typ | :50MHz |
| Hfe Min | :40 |
| No. of Transistors | :1 |
| 工作温度范围 | :-55°C to +150°C |
| 引脚配置 | :b |
| Power Dissipation Ptot Max | :625mW |
| SMD Marking | :MPSA92 |
| 端接类型 | :Through Hole |
| Voltage Vcbo | :300V |
| Weight (kg) | 0.0002 |
| Tariff No. | 85412900 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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