所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| FET特点 | Logic Level Gate |
| 封装 | Tape & Reel (TR) |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极(Id ) @ 25 °C | 13A (Ta), 60A (Tc) |
| 的Vgs(th ) (最大)@ Id | 4V @ 250µA |
| 漏极至源极电压(Vdss) | 100V |
| 标准包装 | 3,000 |
| 供应商设备封装 | Power56 |
| 开态Rds(最大)@ Id ,V GS | 8 mOhm @ 13A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 2.5W |
| 封装/外壳 | 8-PowerTDFN |
| 输入电容(Ciss ) @ VDS | 4120pF @ 50V |
| 闸电荷(Qg ) @ VGS | 58nC @ 10V |
| 其他名称 | FDMS86101ACT |
| RoHS指令 | Lead free / RoHS Compliant |
| 安装风格 | SMD/SMT |
| 晶体管极性 | N-Channel |
| 连续漏极电流 | 13 A |
| 系列 | FDMS86101 |
| 单位重量 | 0.003175 oz |
| RDS(ON) | 8 mOhms |
| 功率耗散 | 104 W |
| 最低工作温度 | - 55 C |
| 最高工作温度 | + 150 C |
| 漏源击穿电压 | 100 V |
| RoHS | RoHS Compliant |
| Continuous Drain Current Id | :60A |
| Drain Source Voltage Vds | :100V |
| On Resistance Rds(on) | :0.0063ohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :3.1V |
| 功耗 | :104W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :Power 56 |
| No. of Pins | :8 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (16-Dec-2013) |
| 工作温度范围 | :-55°C to +150°C |
| Weight (kg) | 0.0005 |
| Tariff No. | 85412900 |
| 电流 - 连续漏极(Id ) @ 25 °C | 13A (Ta), 60A (Tc) |
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