ROHM Semiconductor
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| FET特点 | Logic Level Gate |
| 封装 | Tape & Reel (TR) |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极（Id ） @ 25 °C | 6A |
| 的Vgs（th ） （最大）@ Id | 2.5V @ 1mA |
| 供应商设备封装 | 8-SOIC N |
| 开态Rds（最大）@ Id ，V GS | 25 mOhm @ 6A, 10V |
| FET型 | 2 N-Channel (Dual) |
| 功率 - 最大 | 2W |
| 标准包装 | 2,500 |
| 漏极至源极电压（Vdss） | 45V |
| 输入电容（Ciss ） @ VDS | 1400pF @ 10V |
| 闸电荷（Qg ） @ VGS | 21.6nC @ 5V |
| 封装/外壳 | 8-SOIC (0.154", 3.90mm Width) |
| 产品种类 | MOSFET |
| RoHS | RoHS Compliant |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :6A |
| Drain Source Voltage Vds | :45V |
| On Resistance Rds(on) | :37mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :2.5V |
| 功耗 | :2W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :SOP |
| No. of Pins | :8 |
| MSL | :MSL 1 - Unlimited |
| Continuous Drain Current Id, N Channel | :6A |
| Current Id Max | :6A |
| Drain Source Voltage Vds, N Channel | :45V |
| Module Configuration | :Dual |
| On Resistance Rds(on), N Channel | :0.018ohm |
| 工作温度范围 | :-55°C to +150°C |
| Pulse Current Idm | :24A |
| 端接类型 | :SMD |
| Voltage Vds Typ | :45V |
| Voltage Vgs Rds on Measurement | :4V |
| Voltage Vgs th Max | :2.5V |
| Voltage Vgs th Min | :1V |
| Weight (kg) | 0.000084 |
| Tariff No. | 85412900 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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