所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| FET特点 | Logic Level Gate |
| 封装 | Tape & Reel (TR) |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极(Id ) @ 25 °C | 14A (Ta) |
| 的Vgs(th ) (最大)@ Id | 3V @ 2.2mA |
| 封装/外壳 | 8-SMD, Flat Lead |
| 供应商设备封装 | WMini8-F1 |
| 开态Rds(最大)@ Id ,V GS | 4.6 mOhm @ 7A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 1W |
| 标准包装 | 3,000 |
| 漏极至源极电压(Vdss) | 33V |
| 输入电容(Ciss ) @ VDS | 1500pF @ 10V |
| 闸电荷(Qg ) @ VGS | 14nC @ 4.5V |
| 类别 | Power MOSFET |
| 通道模式 | Depletion |
| 渠道类型 | N |
| 配置 | Single |
| 外形尺寸 | 2.9 x 2.4 x 0.8mm |
| 身高 | 0.8mm |
| 长度 | 2.9mm |
| 最大连续漏极电流 | 14 A |
| 最大漏源电阻 | 5.4 mΩ |
| 最大漏源电压 | 33 V |
| 最大门源电压 | ±20 V |
| 每个芯片的元件数 | 1 |
| 包装类型 | WMini8-F1 |
| 引脚数 | 8 |
| 典型输入电容@ VDS | 1500 pF V @ 4.5 |
| 宽度 | 2.4mm |
| RoHS指令 | Compliant |
| RoHS | RoHS Compliant |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :14A |
| Drain Source Voltage Vds | :33V |
| On Resistance Rds(on) | :0.0036ohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :1V |
| 功耗 | :1W |
| Operating Temperature Min | :-40°C |
| Operating Temperature Max | :85°C |
| Transistor Case Style | :WMini8-F1 |
| No. of Pins | :8 |
| MSL | :MSL 1 - Unlimited |
| Weight (kg) | 0.0001 |
| Tariff No. | 85412900 |
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