所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| FET特点 | Logic Level Gate |
| 封装 | Tape & Reel (TR) |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极(Id ) @ 25 °C | 6.5A |
| 的Vgs(th ) (最大)@ Id | 2.5V @ 480µA |
| 供应商设备封装 | WMini8-F1 |
| 开态Rds(最大)@ Id ,V GS | 20 mOhm @ 3.3A, 10V |
| FET型 | 2 N-Channel (Dual) |
| 功率 - 最大 | 1W |
| 标准包装 | 3,000 |
| 漏极至源极电压(Vdss) | 33V |
| 输入电容(Ciss ) @ VDS | 360pF @ 10V |
| 闸电荷(Qg ) @ VGS | 3.8nC @ 4.5V |
| 封装/外壳 | 8-SMD, Flat Lead |
| 安装风格 | SMD/SMT |
| 配置 | Dual |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | +/- 20 V |
| 连续漏极电流 | 6.5 A |
| RDS(ON) | 20 mOhms |
| 功率耗散 | 1 W |
| 最低工作温度 | - 40 C |
| 封装/外壳 | WMini8-F1 |
| 栅极电荷Qg | 3.8 nC |
| 典型关闭延迟时间 | 24 ns |
| 上升时间 | 3 ns |
| 最高工作温度 | + 85 C |
| 漏源击穿电压 | 33 V |
| RoHS | RoHS Compliant |
| 下降时间 | 9 ns |
| Continuous Drain Current Id | :6.5A |
| Drain Source Voltage Vds | :33V |
| On Resistance Rds(on) | :0.015ohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :1V |
| 功耗 | :1W |
| Operating Temperature Min | :-40°C |
| Operating Temperature Max | :85°C |
| Transistor Case Style | :WMini8-F1 |
| No. of Pins | :8 |
| MSL | :MSL 1 - Unlimited |
| Weight (kg) | 0.000003 |
| Tariff No. | 85412900 |
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