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| Type | Description |
|---|---|
| 包装 | 3SOT-23 |
| 通道模式 | Enhancement |
| 最大漏源电压 | 60 V |
| 最大连续漏极电流 | 0.115 A |
| RDS -于 | 7500@10V mOhm |
| 最大门源电压 | ±20 V |
| 典型导通延迟时间 | 20(Max) ns |
| 典型关闭延迟时间 | 40(Max) ns |
| 工作温度 | -55 to 150 °C |
| 安装 | Surface Mount |
| 标准包装 | Tape & Reel |
| 最大门源电压 | ±20 |
| Package Width | 1.3 |
| PCB | 3 |
| 最大功率耗散 | 300 |
| 最大漏源电压 | 60 |
| 欧盟RoHS指令 | Compliant |
| 最大漏源电阻 | 7500@10V |
| 每个芯片的元件数 | 1 |
| 最低工作温度 | -55 |
| 供应商封装形式 | SOT-23 |
| 标准包装名称 | SOT-23 |
| 最高工作温度 | 150 |
| 渠道类型 | N |
| Package Length | 2.9 |
| 引脚数 | 3 |
| Package Height | 0.94 |
| 最大连续漏极电流 | 0.115 |
| 封装 | Tape and Reel |
| 铅形状 | Gull-wing |
| FET特点 | Logic Level Gate |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极（Id ） @ 25 °C | 115mA (Tc) |
| 的Vgs（th ） （最大）@ Id | 2.5V @ 250µA |
| 供应商设备封装 | SOT-23-3 (TO-236) |
| 其他名称 | 2N7002LT1GOSTR |
| 开态Rds（最大）@ Id ，V GS | 7.5 Ohm @ 500mA, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 225mW |
| 漏极至源极电压（Vdss） | 60V |
| 输入电容（Ciss ） @ VDS | 50pF @ 25V |
| 封装/外壳 | TO-236-3, SC-59, SOT-23-3 |
| RoHS指令 | Lead free / RoHS Compliant |
| 类别 | Small Signal |
| 配置 | Single |
| 外形尺寸 | 2.9 x 1.3 x 0.94mm |
| 身高 | 0.94mm |
| 长度 | 2.9mm |
| 最大漏源电阻 | 7.5 Ω |
| 最高工作温度 | +150 °C |
| 最大功率耗散 | 0.3 W |
| 最低工作温度 | -55 °C |
| 包装类型 | SOT-23 |
| 典型输入电容@ VDS | 50 pF V @ 25 |
| 宽度 | 1.3mm |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :115mA |
| Drain Source Voltage Vds | :60V |
| On Resistance Rds(on) | :7.5ohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :2.5V |
| 功耗 | :200mW |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :SOT-23 |
| No. of Pins | :3 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Temperature | :25°C |
| 外部深度 | :2.5mm |
| External Length / Height | :1.12mm |
| 外宽 | :3.05mm |
| Full Power Rating Temperature | :25°C |
| No. of Transistors | :1 |
| Pulse Current Idm | :800mA |
| SMD Marking | :702 |
| 胶带宽度 | :8mm |
| Voltage Vds Typ | :60V |
| Voltage Vgs Rds on Measurement | :10V |
| Voltage Vgs th Max | :2.5V |
| Weight (kg) | 0.000033 |
| Tariff No. | 85412900 |
| Current,Drain | ±115mA |
| PackageType | SOT-23(TO-236) |
| 极化方式 | N-Channel |
| PowerDissipation | 225mW |
| Resistance,DraintoSourceOn | 7.5Ohms |
| Temperature,Operating,Maximum | +150°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 40ns |
| Time,Turn-OnDelay | 20ns |
| Transconductance,Forward | 80Millimhos |
| Voltage,Breakdown,DraintoSource | 60V |
| Voltage,Forward,Diode | -1.5V |
| Voltage,GatetoSource | ±20V |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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