NXP
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| 类别 | Power MOSFET |
| 通道模式 | Enhancement |
| 渠道类型 | N |
| 配置 | Single |
| 外形尺寸 | 3 x 1.4 x 1mm |
| 身高 | 1mm |
| 长度 | 3mm |
| 最大连续漏极电流 | 0.19 A |
| 最大漏源电阻 | 10 Ω |
| 最大漏源电压 | 100 V |
| 最大门源电压 | ±20 V |
| 最高工作温度 | +150 °C |
| 最大功率耗散 | 0.83 W |
| 最低工作温度 | -65 °C |
| 安装类型 | Surface Mount |
| 每个芯片的元件数 | 1 |
| 包装类型 | TO-236AB |
| 引脚数 | 3 |
| 典型输入电容@ VDS | 25 pF V @ 10 |
| 宽度 | 1.4mm |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :190mA |
| Drain Source Voltage Vds | :100V |
| On Resistance Rds(on) | :10ohm |
| Rds(on) Test Voltage Vgs | :5V |
| Threshold Voltage Vgs | :2V |
| 功耗 | :830mW |
| Operating Temperature Min | :-65°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :SOT-23 |
| No. of Pins | :3 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Id Max | :190mA |
| Current Temperature | :25°C |
| No. of Transistors | :1 |
| 工作温度范围 | :-65°C to +150°C |
| 引脚配置 | :1g, 2s, 3d |
| Power Dissipation Ptot Max | :830mW |
| Pulse Current Idm | :800mA |
| 端接类型 | :SMD |
| Voltage Vds Typ | :100V |
| Voltage Vgs Max | :20V |
| Voltage Vgs Rds on Measurement | :5V |
| Weight (kg) | 0.000033 |
| Tariff No. | 85412900 |
| RoHS指令 | RoHS Compliant Part |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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