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| Type | Description |
|---|---|
| 包装 | 3TO-247AC |
| 配置 | Single |
| 最大集电极发射极电压 | 1200 V |
| 最大连续集电极电流 | 57 A |
| 最大栅极发射极电压 | ±20 V |
| 安装 | Through Hole |
| 标准包装 | Rail / Tube |
| 栅极电荷 | 167nC |
| 电流 - 集电极( Ic)(最大) | 57A |
| 安装类型 | Through Hole |
| 开关能量 | 21.4mJ |
| 时间Td(开/关) @ 25°C | 32ns/845ns |
| Vce(开) (最大值) Vge,Ic时 | 1.7V @ 15V, 33A |
| 电压 - 集电极发射极击穿(最大) | 1200V |
| 供应商设备封装 | TO-247AC |
| 封装 | Bulk |
| 功率 - 最大 | 200W |
| 输入类型 | Standard |
| 封装/外壳 | TO-247-3 |
| 测试条件 | 960V, 33A, 5 Ohm, 15V |
| 其他名称 | *IRG4PH50SPBF |
| 电流 - 集电极脉冲( ICM ) | 114A |
| RoHS指令 | Lead free / RoHS Compliant |
| 渠道类型 | N |
| 外形尺寸 | 15.9 x 5.3 x 20.3mm |
| 身高 | 20.3mm |
| 长度 | 15.9mm |
| 最高工作温度 | +150 °C |
| 最低工作温度 | -55 °C |
| 包装类型 | TO-247AC |
| 引脚数 | 3 |
| 宽度 | 5.3mm |
| 工厂包装数量 | 25 |
| 集电极 - 发射极饱和电压 | 1.75 V |
| 栅极 - 射极漏泄电流 | 100 nA |
| 连续集电极电流Ic最大 | 33 A |
| 连续集电极电流在25 C | 57 A |
| 集电极 - 发射极最大电压VCEO | 1.2 kV |
| 安装风格 | Through Hole |
| 功率耗散 | 200 W |
| RoHS | RoHS Compliant |
| 集电极电流( DC)(最大值) | 57 A |
| 集电极 - 发射极电压 | 1200 V |
| 工作温度(最大) | 150C |
| 工作温度(最小值) | -55C |
| 工作温度分类 | Military |
| Gate to Emitter Voltage (Max) | �20 V |
| 弧度硬化 | No |
| 集电极电流(DC ) | 57 A |
| DC Collector Current | :57A |
| Collector Emitter Voltage Vces | :1.47V |
| 功耗 | :200W |
| Collector Emitter Voltage V(br)ceo | :1.2kV |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-247AC |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Ic Continuous a Max | :57A |
| Current Temperature | :25°C |
| Device Marking | :IRG4PH50S |
| Fall Time Max | :638ns |
| Full Power Rating Temperature | :25°C |
| 工作温度范围 | :-55°C to +150°C |
| Power Dissipation Max | :200W |
| Pulsed Current Icm | :114A |
| 上升时间 | :29ns |
| 端接类型 | :Through Hole |
| 晶体管极性 | :N Channel |
| 晶体管类型 | :IGBT |
| Voltage Vces | :1.2kV |
| Weight (kg) | 0.006 |
| Tariff No. | 85412900 |
| Capacitance,Gate | 3600pF |
| Current,Collector | 57A |
| EnergyRating | 270mJ |
| PackageType | TO-247AC |
| 极性 | N-Channel |
| PowerDissipation | 200W |
| Resistance,Thermal,JunctiontoCase | 0.64°C/W |
| Speed,Switching | <1kHz |
| TransistorType | NPN |
| 类型 | Standard |
| Voltage,CollectortoEmitterShorted | 1200V |
| Voltage,CollectortoEmitter,Saturation | 1.75V |
| 案例 | TO247AC |
| Transistor type | IGBT |
| 功率 | 200W |
| Collector-emitter voltage | 1200V |
| Multiplicity | 1 |
| Collector current | 57A |
| Gross weight | 7.29 g |
| Collective package [pcs] | 200 |
| spg | 200 |
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