international rectifier
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| Type | Description |
|---|---|
| 包装 | 7D2PAK |
| 通道模式 | Enhancement |
| 最大漏源电压 | 60 V |
| 最大连续漏极电流 | 293 A |
| RDS -于 | 2.1@10V mOhm |
| 最大门源电压 | ±20 V |
| 典型导通延迟时间 | 14 ns |
| 典型上升时间 | 61 ns |
| 典型关闭延迟时间 | 118 ns |
| 典型下降时间 | 69 ns |
| 工作温度 | -55 to 175 °C |
| 安装 | Surface Mount |
| 标准包装 | Rail / Tube |
| Confezione fornitore | D2PAK |
| Montaggio | Surface Mount |
| Resistenza di sorgente di drain massima | 2.1@10V |
| TIPO二运河 | N |
| 每个芯片NUMERO二培元 | 1 |
| Package Width | 9.65(Max) |
| Modalità canale | Enhancement |
| PCB | 6 |
| Massima tensione di drain alla fonte | 60 |
| Tensione di fonte gate massima | ±20 |
| 符合UE | Compliant |
| Categoria | Power MOSFET |
| Dissipazione massima della potenza | 375000 |
| Corrente di drain continua massima | 293 |
| 诺姆标准苏拉confezione | D2PAK |
| Temperatura d'esercizio minima | -55 |
| 经conduttore | Gull-wing |
| NUMERO DEI针 | 7 |
| Confezione | Tube |
| Package Length | 10.67(Max) |
| Package Height | 4.83(Max) |
| Massima temperatura d'esercizio | 175 |
| 标签 | Tab |
| FET特点 | Standard |
| 封装 | Tube |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极（Id ） @ 25 °C | 240A (Tc) |
| 的Vgs（th ） （最大）@ Id | 4V @ 250µA |
| 漏极至源极电压（Vdss） | 60V |
| 供应商设备封装 | D2PAK (7-Lead) |
| 开态Rds（最大）@ Id ，V GS | 2.1 mOhm @ 168A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 375W |
| 输入电容（Ciss ） @ VDS | 8850pF @ 50V |
| 其他名称 | IRFS30067PPBF |
| 闸电荷（Qg ） @ VGS | 300nC @ 10V |
| 封装/外壳 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| RoHS指令 | Lead free / RoHS Compliant |
| 类别 | Power MOSFET |
| 渠道类型 | N |
| 配置 | Quint Source, Single |
| 外形尺寸 | 10.67 x 9.65 x 4.83mm |
| 身高 | 4.83mm |
| 长度 | 10.67mm |
| 最大漏源电阻 | 0.002 Ω |
| 最高工作温度 | +175 °C |
| 最大功率耗散 | 375 W |
| 最低工作温度 | -55 °C |
| 每个芯片的元件数 | 1 |
| 包装类型 | D2PAK |
| 引脚数 | 7 |
| 典型栅极电荷@ VGS | 200 nC V @ 10 |
| 典型输入电容@ VDS | 8850 pF V @ 50 |
| 宽度 | 9.65mm |
| 工厂包装数量 | 50 |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | 20 V |
| 连续漏极电流 | 293 A |
| 安装风格 | SMD/SMT |
| 功率耗散 | 375 W |
| 封装/外壳 | D2PAK |
| 漏源击穿电压 | 60 V |
| RoHS | RoHS Compliant |
| 栅极电荷Qg | 200 nC |
| 漏极电流（最大值） | 293 A |
| 频率（最大） | Not Required MHz |
| 栅源电压（最大值） | �20 V |
| 输出功率（最大） | Not Required W |
| 噪声系数 | Not Required dB |
| 漏源导通电阻 | 0.0021 ohm |
| 工作温度范围 | -55C to 175C |
| 极性 | N |
| 类型 | Power MOSFET |
| 元件数 | 1 |
| 工作温度分类 | Military |
| 漏极效率 | Not Required % |
| 漏源导通电压 | 60 V |
| 功率增益 | Not Required dB |
| 弧度硬化 | No |
| 删除 | Compliant |
| Continuous Drain Current Id | :293A |
| Drain Source Voltage Vds | :60V |
| On Resistance Rds(on) | :1.5mohm |
| Rds(on) Test Voltage Vgs | :20V |
| Threshold Voltage Vgs | :4V |
| 功耗 | :375W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :175°C |
| Transistor Case Style | :TO-263 |
| No. of Pins | :7 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Capacitance Ciss Typ | :8850pF |
| Current Id Max | :293A |
| 工作温度范围 | :-55°C to +175°C |
| Pulse Current Idm | :1172A |
| Reverse Recovery Time trr Typ | :44ns |
| 端接类型 | :SMD |
| Voltage Vds Typ | :60V |
| Voltage Vgs Max | :4V |
| Voltage Vgs Rds on Measurement | :10V |
| Voltage Vgs th Max | :4V |
| Voltage Vgs th Min | :2V |
| Weight (kg) | 0.0001 |
| Tariff No. | 85412900 |
| 案例 | D2PAK-7 |
| Gate charge | 200nC |
| Transistor kind | HEXFET |
| Transistor type | N-MOSFET |
| 功率 | 375W |
| Drain-source voltage | 60V |
| 极化 | unipolar |
| Drain current | 293A |
| Multiplicity | 1 |
| Gross weight | 2.54 g |
| gate-source voltage | 20V |
| On-state resistance | 2.1mΩ |
| Collective package [pcs] | 20 |
| Junction-to-case thermal resistance | 400mK/W |
| spg | 20 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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