international rectifier
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| Type | Description |
|---|---|
| 包装 | 4SOT-223 |
| 通道模式 | Enhancement |
| 最大漏源电压 | 55 V |
| 最大连续漏极电流 | 5.1 A |
| RDS -于 | 57.5@10V mOhm |
| 最大门源电压 | ±20 V |
| 典型导通延迟时间 | 7.8 ns |
| 典型上升时间 | 21 ns |
| 典型关闭延迟时间 | 30 ns |
| 典型下降时间 | 23 ns |
| 工作温度 | -55 to 150 °C |
| 安装 | Surface Mount |
| 标准包装 | Rail / Tube |
| 最大门源电压 | ±20 |
| 欧盟RoHS指令 | Compliant |
| 最高工作温度 | 150 |
| 标准包装名称 | SOT-223 |
| 最低工作温度 | -55 |
| 渠道类型 | N |
| Maximum Drain Source Resistance | 57.5@10V |
| 最大漏源电压 | 55 |
| 每个芯片的元件数 | 1 |
| 供应商封装形式 | SOT-223 |
| 最大功率耗散 | 2800 |
| 最大连续漏极电流 | 5.1 |
| 引脚数 | 4 |
| 铅形状 | Gull-wing |
| FET特点 | Logic Level Gate |
| 封装 | Tube |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极（Id ） @ 25 °C | 5.1A (Ta) |
| 的Vgs（th ） （最大）@ Id | 4V @ 250µA |
| 漏极至源极电压（Vdss） | 55V |
| 供应商设备封装 | SOT-223 |
| 开态Rds（最大）@ Id ，V GS | 57.5 mOhm @ 3.1A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 1W |
| 输入电容（Ciss ） @ VDS | 340pF @ 25V |
| 其他名称 | *IRFL024ZPBF |
| 闸电荷（Qg ） @ VGS | 14nC @ 10V |
| 封装/外壳 | TO-261-4, TO-261AA |
| RoHS指令 | Lead free / RoHS Compliant |
| 类别 | Power MOSFET |
| 配置 | Dual Drain, Single |
| 外形尺寸 | 6.7 x 3.7 x 1.7mm |
| 身高 | 1.7mm |
| 长度 | 6.7mm |
| 最大漏源电阻 | 0.058 Ω |
| 最高工作温度 | +150 °C |
| 最大功率耗散 | 2.8 W |
| 最低工作温度 | -55 °C |
| 包装类型 | SOT-223 |
| 典型栅极电荷@ VGS | 9.1 nC V @ 10 |
| 典型输入电容@ VDS | 340 pF V @ 25 |
| 宽度 | 3.7mm |
| 工厂包装数量 | 80 |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | 20 V |
| 连续漏极电流 | 5.1 A |
| 正向跨导 - 闵 | 6.2 S |
| 安装风格 | SMD/SMT |
| RDS（ON） | 57.5 mOhms |
| 功率耗散 | 2.8 W |
| 封装/外壳 | SOT-223 |
| 栅极电荷Qg | 9.1 nC |
| 上升时间 | 21 ns |
| 漏源击穿电压 | 55 V |
| RoHS | RoHS Compliant |
| 下降时间 | 23 ns |
| Continuous Drain Current Id | :5.1A |
| Drain Source Voltage Vds | :55V |
| On Resistance Rds(on) | :58mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :4V |
| 功耗 | :2.8W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :SOT-223 |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Id Max | :5.1A |
| Current Temperature | :25°C |
| Full Power Rating Temperature | :25°C |
| Junction to Case Thermal Resistance A | :45°C/W |
| On State resistance @ Vgs = 10V | :57.5Mohm |
| 工作温度范围 | :-55°C to +150��C |
| Pulse Current Idm | :41A |
| Voltage Vds Typ | :55V |
| Voltage Vgs Max | :4V |
| Voltage Vgs Rds on Measurement | :10V |
| Voltage Vgs th Max | :4V |
| Weight (kg) | 0.0002 |
| Tariff No. | 85412900 |
| Current,Drain | 5.1A |
| GateCharge,Total | 9.1nC |
| PackageType | SOT-223 |
| 极化方式 | N-Channel |
| PowerDissipation | 1W |
| Resistance,DraintoSourceOn | 46.2Milliohms |
| Temperature,Operating,Maximum | +150°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 30ns |
| Time,Turn-OnDelay | 7.8ns |
| Transconductance,Forward | 6.2S |
| Voltage,Breakdown,DraintoSource | 55V |
| Voltage,Forward,Diode | 1.3V |
| Voltage,GatetoSource | ±20V |
| 案例 | SOT223 |
| Gate charge | 9.1nC |
| Transistor kind | HEXFET |
| Transistor type | N-MOSFET |
| 功率 | 2.8W |
| Drain-source voltage | 55V |
| 极化 | unipolar |
| Drain current | 5.1A |
| Multiplicity | 1 |
| Gross weight | 0.24 g |
| gate-source voltage | 20V |
| On-state resistance | 57.5mΩ |
| Junction-to-ambient thermal resistance | 45K/W |
| Collective package [pcs] | 80 |
| spg | 80 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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