international rectifier
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| Type | Description |
|---|---|
| 包装 | 8SOIC |
| 通道模式 | Enhancement |
| 最大漏源电压 | 30 V |
| 最大连续漏极电流 | 7.6@Q 1|11@Q 2 A |
| RDS -于 | 16.2@10V@Q 1|10.8@10V@Q 2 mOhm |
| 最大门源电压 | ±20 V |
| 典型导通延迟时间 | 6.9@Q 1|7.8@Q 2 ns |
| 典型上升时间 | 7.3@Q 1|10@Q 2 ns |
| 典型关闭延迟时间 | 10@Q 1|15@Q 2 ns |
| 典型下降时间 | 3.2@Q 1|4.6@Q 2 ns |
| 工作温度 | -55 to 150 °C |
| 安装 | Surface Mount |
| 标准包装 | Rail / Tube |
| FET特点 | Logic Level Gate |
| 封装 | Tube |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极（Id ） @ 25 °C | 7.6A, 11A |
| 的Vgs（th ） （最大）@ Id | 2.25V @ 25µA |
| 漏极至源极电压（Vdss） | 30V |
| 供应商设备封装 | 8-SO |
| 开态Rds（最大）@ Id ，V GS | 16.2 mOhm @ 7.6A, 10V |
| FET型 | 2 N-Channel (Dual) |
| 功率 - 最大 | 1.4W, 2W |
| 输入电容（Ciss ） @ VDS | 910pF @ 15V |
| 闸电荷（Qg ） @ VGS | 11nC @ 4.5V |
| 封装/外壳 | 8-SOIC (0.154", 3.90mm Width) |
| RoHS指令 | Lead free / RoHS Compliant |
| 类别 | Power MOSFET |
| 渠道类型 | N |
| 配置 | Dual |
| 外形尺寸 | 5 x 4 x 1.5mm |
| 身高 | 1.5mm |
| 长度 | 5mm |
| 最大漏源电阻 | 0.011 (Transistor 2) Ω, 0.016 (Transistor 1) Ω |
| 最高工作温度 | +150 °C |
| 最大功率耗散 | 1.4 (Transistor 1) W |
| 最低工作温度 | -55 °C |
| 每个芯片的元件数 | 2 |
| 包装类型 | SOIC |
| 引脚数 | 8 |
| 典型栅极电荷@ VGS | 14 nC @ 4.5 V (Transistor 2), 7.5 nC @ 4.5 V (Transistor 1) |
| 典型输入电容@ VDS | 1780 pF @ 15 V (Transistor 2), 910 pF @ 15 V (Transistor 1) |
| 宽度 | 4mm |
| 工厂包装数量 | 95 |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | 20 V |
| 连续漏极电流 | 11 A |
| 安装风格 | SMD/SMT |
| RDS（ON） | 13 mOhms |
| 功率耗散 | 1.4 W |
| 封装/外壳 | SOIC-8 |
| 漏源击穿电压 | 30 V |
| RoHS | RoHS Compliant |
| 栅极电荷Qg | 14 nC |
| 漏极电流（最大值） | 7.6@Q1/11@Q2 A |
| 频率（最大） | Not Required MHz |
| 栅源电压（最大值） | �20 V |
| 输出功率（最大） | Not Required W |
| 噪声系数 | Not Required dB |
| 工作温度范围 | -55C to 150C |
| 极性 | N |
| 类型 | Power MOSFET |
| 元件数 | 2 |
| 工作温度分类 | Military |
| 漏极效率 | Not Required % |
| 漏源导通电压 | 30 V |
| 功率增益 | Not Required dB |
| 弧度硬化 | No |
| 删除 | Compliant |
| Continuous Drain Current Id | :11A |
| Drain Source Voltage Vds | :30V |
| On Resistance Rds(on) | :8.6mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :2.25V |
| 功耗 | :2W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :SOIC |
| No. of Pins | :8 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Continuous Drain Current Id, N Channel | :11A |
| Current Id Max | :11A |
| Drain Source Voltage Vds, N Channel | :30V |
| Module Configuration | :Dual |
| On Resistance Rds(on), N Channel | :0.01ohm |
| 工作温度范围 | :-55°C to +150°C |
| Weight (kg) | 0.0005 |
| Tariff No. | 85412900 |
| ChannelType | DualN |
| Current,Drain | 7.6/11Q1/Q2A |
| GateCharge,Total | 7.5nC(ControlFET),14nC(SynchronousFET) |
| PackageType | SO-8 |
| 极化方式 | N-Channel |
| PowerDissipation | 1.4/2Q1/Q2W |
| Resistance,DraintoSourceOn | 0.0162/0.018Q1/Q2Ohm |
| Resistance,Thermal,JunctiontoCase | 90/62.5Q1/Q2DegC/W |
| Temperature,Operating,Maximum | +150°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 10ns(ControlFET),15ns(SynchronousFET) |
| Time,Turn-OnDelay | 6.9ns(ControlFET),7.8ns(SynchronousFET) |
| Transconductance,Forward | 17S(ControlFET),23S(SynchronousFET) |
| Voltage,Breakdown,DraintoSource | 30V |
| Voltage,Forward,Diode | 1V |
| Voltage,GatetoSource | ±20V |
| 案例 | SO8 |
| Gate charge | 14nC |
| Transistor kind | HEXFET |
| Transistor type | N-MOSFET x2 |
| 功率 | 1.4W |
| Drain-source voltage | 30V |
| 极化 | unipolar |
| Drain current | 7.6A |
| Multiplicity | 1 |
| Gross weight | 0.22 g |
| gate-source voltage | 20V |
| On-state resistance | 10.8mΩ |
| Junction-to-ambient thermal resistance | 62.5K/W |
| Collective package [pcs] | 285 |
| spg | 285 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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