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| Type | Description |
|---|---|
| 包装 | 3D2PAK |
| 通道模式 | Enhancement |
| 最大漏源电压 | 30 V |
| 最大连续漏极电流 | 62 A |
| RDS -于 | 12@10V mOhm |
| 最大门源电压 | ±12 V |
| 典型导通延迟时间 | 7.2 ns |
| 典型上升时间 | 50 ns |
| 典型关闭延迟时间 | 17.6 ns |
| 典型下降时间 | 3.7 ns |
| 工作温度 | -55 to 175 °C |
| 安装 | Surface Mount |
| 标准包装 | Rail / Tube |
| RoHS | RoHS Compliant |
| 晶体管极性 | N-Channel |
| 漏源击穿电压 | 30 V |
| 源极击穿电压 | 12 V |
| 连续漏极电流 | 62 A |
| 抗漏源极RDS ( ON) | 13.5 mOhms |
| 安装风格 | SMD/SMT |
| 封装/外壳 | D2PAK |
| 封装 | Tube |
| 栅极电荷Qg | 24 nC |
| 功率耗散 | 87 W |
| 工厂包装数量 | 50 |
| 寿命 | New At Mouser |
| FET特点 | Logic Level Gate |
| 安装类型 | Surface Mount |
| 电流 - 连续漏极(Id ) @ 25 °C | 62A (Tc) |
| 的Vgs(th ) (最大)@ Id | 2V @ 250µA |
| 漏极至源极电压(Vdss) | 30V |
| 供应商设备封装 | D2PAK |
| 开态Rds(最大)@ Id ,V GS | 12 mOhm @ 15A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 87W |
| 输入电容(Ciss ) @ VDS | 2417pF @ 15V |
| 其他名称 | *IRF3708SPBF |
| 闸电荷(Qg ) @ VGS | 24nC @ 4.5V |
| RoHS指令 | Lead free / RoHS Compliant |
| RDS(ON) | 13.5 mOhms |
| 栅源电压(最大值) | �12 V |
| 漏源导通电阻 | 0.012 ohm |
| 工作温度范围 | -55C to 175C |
| 包装类型 | D2PAK |
| 引脚数 | 2 +Tab |
| 极性 | N |
| 类型 | Power MOSFET |
| 元件数 | 1 |
| 工作温度分类 | Military |
| 漏源导通电压 | 30 V |
| 弧度硬化 | No |
| 删除 | Compliant |
| Continuous Drain Current Id | :62A |
| Drain Source Voltage Vds | :30V |
| On Resistance Rds(on) | :8mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :2V |
| 功耗 | :87W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :175°C |
| Transistor Case Style | :TO-263 |
| No. of Pins | :3 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Id Max | :62A |
| 工作温度范围 | :-55°C to +175°C |
| Voltage Vgs Max | :12V |
| Weight (kg) | 0.00159 |
| Tariff No. | 85412900 |
| 案例 | D2PAK |
| Transistor type | N-MOSFET |
| 功率 | 87W |
| Drain-source voltage | 30V |
| 极化 | unipolar |
| Drain current | 62A |
| Multiplicity | 1 |
| Gross weight | 1.44 g |
| Collective package [pcs] | 200 |
| spg | 200 |
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