international rectifier
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| Type | Description |
|---|---|
| 包装 | 3TO-220AB |
| 通道模式 | Enhancement |
| 最大漏源电压 | 40 V |
| 最大连续漏极电流 | 210 A |
| RDS -于 | 3.6@10V mOhm |
| 最大门源电压 | ±20 V |
| 典型导通延迟时间 | 15 ns |
| 典型上升时间 | 140 ns |
| 典型关闭延迟时间 | 62 ns |
| 典型下降时间 | 110 ns |
| 工作温度 | -55 to 175 °C |
| 安装 | Through Hole |
| 标准包装 | Rail / Tube |
| FET特点 | Standard |
| 封装 | Tube |
| 安装类型 | Through Hole |
| 电流 - 连续漏极（Id ） @ 25 °C | 210A (Tc) |
| 的Vgs（th ） （最大）@ Id | 4V @ 250µA |
| 漏极至源极电压（Vdss） | 40V |
| 供应商设备封装 | TO-220AB |
| 开态Rds（最大）@ Id ，V GS | 3.6 mOhm @ 130A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 330W |
| 输入电容（Ciss ） @ VDS | 5890pF @ 25V |
| 其他名称 | *IRF2204PBF |
| 闸电荷（Qg ） @ VGS | 200nC @ 10V |
| 封装/外壳 | TO-220-3 |
| RoHS指令 | Lead free / RoHS Compliant |
| 工厂包装数量 | 50 |
| 晶体管极性 | N-Channel |
| 源极击穿电压 | 20 V |
| 连续漏极电流 | 210 A |
| 安装风格 | Through Hole |
| 功率耗散 | 330 W |
| 封装/外壳 | TO-220AB |
| 漏源击穿电压 | 40 V |
| RoHS | RoHS Compliant |
| 栅极电荷Qg | 130 nC |
| 漏极电流（最大值） | 210 A |
| 频率（最大） | Not Required MHz |
| 栅源电压（最大值） | �20 V |
| 输出功率（最大） | Not Required W |
| 噪声系数 | Not Required dB |
| 漏源导通电阻 | 0.0036 ohm |
| 工作温度范围 | -55C to 175C |
| 包装类型 | TO-220AB |
| 引脚数 | 3 +Tab |
| 极性 | N |
| 类型 | Power MOSFET |
| 元件数 | 1 |
| 工作温度分类 | Military |
| 漏极效率 | Not Required % |
| 漏源导通电压 | 40 V |
| 功率增益 | Not Required dB |
| 弧度硬化 | No |
| Continuous Drain Current Id | :210A |
| Drain Source Voltage Vds | :40V |
| On Resistance Rds(on) | :3.6mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :4V |
| 功耗 | :330W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :175°C |
| Transistor Case Style | :TO-220AB |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Current Id Max | :210A |
| Junction to Case Thermal Resistance A | :0.45°C/W |
| On State resistance @ Vgs = 10V | :3.6ohm |
| 工作温度范围 | :-55°C to +175°C |
| Pulse Current Idm | :850A |
| Voltage Vds Typ | :40V |
| Voltage Vgs Max | :4V |
| Voltage Vgs Rds on Measurement | :10V |
| Weight (kg) | 0.002 |
| Tariff No. | 85412900 |
| Current,Drain | 210A |
| GateCharge,Total | 130nC |
| PackageType | TO-220AB |
| 极化方式 | N-Channel |
| PowerDissipation | 330W |
| Resistance,DraintoSourceOn | 3Milliohms |
| Temperature,Operating,Maximum | +175°C |
| Temperature,Operating,Minimum | -55°C |
| Time,Turn-OffDelay | 62ns |
| Time,Turn-OnDelay | 15ns |
| Transconductance,Forward | 120S |
| Voltage,Breakdown,DraintoSource | 40V |
| Voltage,Forward,Diode | 1.3V |
| Voltage,GatetoSource | ±20V |
| 案例 | TO220AB |
| Transistor type | N-MOSFET |
| 功率 | 330W |
| Drain-source voltage | 40V |
| 极化 | unipolar |
| Drain current | 210A |
| Multiplicity | 1 |
| Gross weight | 2.55 g |
| Collective package [pcs] | 200 |
| spg | 200 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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