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| Type | Description |
|---|---|
| 包装 | 3TO-247 |
| 配置 | Single |
| 最大集电极发射极电压 | 1200 V |
| 最大连续集电极电流 | 46 A |
| 最大栅极发射极电压 | ±20 V |
| 安装 | Through Hole |
| 标准包装 | Rail / Tube |
| P( TOT ) | 313W |
| 匹配代码 | SKW25N120 |
| I(C ) | 46A |
| TD (上) | 60nS |
| 单位包 | 30 |
| 标准的提前期 | 22 weeks |
| 最小起订量 | 240 |
| T( R) | 52nS |
| 无铅Defin | RoHS-conform |
| TD (关闭) | 950nS |
| 技术 | Fast |
| 汽车 | NO |
| V( CE ) | 1200V |
| V( CESAT ) | 3.6V |
| Bodydiode | YES |
| 栅极电荷 | 225nC |
| 电流 - 集电极( Ic)(最大) | 46A |
| 安装类型 | Through Hole |
| 开关能量 | 3.7mJ |
| 时间Td(开/关) @ 25°C | 45ns/730ns |
| Vce(开) (最大值) Vge,Ic时 | 3.6V @ 15V, 25A |
| 电压 - 集电极发射极击穿(最大) | 1200V |
| 供应商设备封装 | PG-TO247-3 |
| 反向恢复时间(trr ) | 90ns |
| 封装 | Tube |
| 功率 - 最大 | 313W |
| 输入类型 | Standard |
| 封装/外壳 | TO-247-3 |
| IGBT类型 | NPT |
| 测试条件 | 800V, 25A, 22 Ohm, 15V |
| 电流 - 集电极脉冲( ICM ) | 84A |
| RoHS指令 | Lead free / RoHS Compliant |
| 产品种类 | IGBT Transistors |
| 连续集电极电流Ic最大 | 46 A |
| 系列 | SKW25N120 |
| 集电极 - 发射极最大电压VCEO | 1200 V |
| 安装风格 | Through Hole |
| 最低工作温度 | - 55 C |
| 零件号别名 | SKW25N120FKSA1 SP000012571 |
| 最高工作温度 | + 150 C |
| RoHS | RoHS Compliant |
| 晶体管类型 | :IGBT |
| DC Collector Current | :46A |
| Collector Emitter Voltage Vces | :3.6V |
| 功耗 | :313W |
| Collector Emitter Voltage V(br)ceo | :1.2kV |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-247AC |
| No. of Pins | :3 |
| MSL | :- |
| Current Ic @ Vce Sat | :25A |
| Current Ic Continuous a Max | :46A |
| Current Temperature | :25°C |
| Device Marking | :K25N120 |
| Fall Time tf | :39ns |
| Full Power Rating Temperature | :25°C |
| Junction Temperature Tj Max | :150°C |
| Junction Temperature Tj Min | :-55°C |
| 工作温度范围 | :-55°C to +150°C |
| Power Dissipation Max | :313W |
| Power Dissipation Ptot Max | :313W |
| Pulsed Current Icm | :84A |
| 上升时间 | :40ns |
| 端接类型 | :Through Hole |
| 晶体管极性 | :N Channel |
| Voltage Vces | :1.2kV |
| Weight (kg) | 0.006 |
| Tariff No. | 85412900 |
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