Infineon Technologies
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| FET特点 | Standard |
| 封装 | Tube |
| 安装类型 | Through Hole |
| 电流 - 连续漏极（Id ） @ 25 °C | 100A (Tc) |
| 的Vgs（th ） （最大）@ Id | 4V @ 180µA |
| 漏极至源极电压（Vdss） | 100V |
| 标准包装 | 500 |
| 供应商设备封装 | TO-220-3 |
| 开态Rds（最大）@ Id ，V GS | 6.5 mOhm @ 100A, 10V |
| FET型 | MOSFET N-Channel, Metal Oxide |
| 功率 - 最大 | 214W |
| 封装/外壳 | TO-220-3 |
| 输入电容（Ciss ） @ VDS | 9200pF @ 50V |
| 闸电荷（Qg ） @ VGS | 139nC @ 10V |
| 晶体管极性 | :N Channel |
| Continuous Drain Current Id | :100A |
| Drain Source Voltage Vds | :100V |
| On Resistance Rds(on) | :5mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :3V |
| 功耗 | :214W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :175°C |
| Transistor Case Style | :TO-220 |
| No. of Pins | :3 |
| MSL | :- |
| Current Id Max | :100A |
| 工作温度范围 | :-55°C to +175°C |
| 晶体管类型 | :Power MOSFET |
| Voltage Vgs Max | :20V |
| Weight (kg) | 0.002 |
| Tariff No. | 85412900 |
| 电流 - 连续漏极（Id ） @ 25 °C | 100A (Tc) |
| RoHS指令 | Lead free / RoHS Compliant |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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